21MAY13 Search Results
21MAY13 Datasheets Context Search
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Contextual Info: TH IS DRAWING IS UNPU BLISH ED . RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC DW A L L RIGHTS RESERVED. D2 JL 21MAY13 REVISED. ECR— 1 3 - 0 0 2 3 9 9 WK TE LOGO & DATE CODE NOTES: 1. MATERIAL: H O U S IN G : T H E R M O P L A S T IC (P B T ), |
OCR Scan |
21MAY13 AR2000 | |
Contextual Info: VB10150C-M3 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS • • • • Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation |
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VB10150C-M3 J-STD-020, O-263AB VB10150C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VBT2060C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT2060C-M3 O-263AB J-STD-020, VBT2060C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
em4205
Abstract: EM4305V3DF2C EM4305 em4305 CHIP EM4205V4DF2C
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EM4205-EM4305 EM4205/4305 EM4469/4569 EM4205 EM4305 EM4305 330pF 4205-4305-DS-01 EM4305V3DF2C em4305 CHIP EM4205V4DF2C | |
Contextual Info: VBT2060C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT2060C-M3 O-263AB J-STD-020, VBT2060C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Application Note 34
Abstract: transistor smd zc 38 thyristor using zero crossing circuit Triac application note vo2223
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21-May-13 Application Note 34 transistor smd zc 38 thyristor using zero crossing circuit Triac application note vo2223 | |
EM4305V3DF2C
Abstract: EM4305
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EM4205-EM4305 EM4205/4305 EM4469/4569 EM4205 EM4305 EM4305 330pF 4205-4305-DS-01 EM4305V3DF2C | |
Contextual Info: VBT4060C-M3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT4060C-M3 O-263AB J-STD-020, VBT4060C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: DC DC 30 Watts xppower.com RDC Series • 72 & 110 VDC Input for Railway Applications • Single, Dual and Triple Outputs • 1500 VAC Basic Isolation • High Power Density • High Efficiency • Remote On/Off • 3 Year Warranty Up to 91% Specification |
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10ight: 21-May-13 RDC30 | |
Contextual Info: PTCTZ.R.TT www.vishay.com Vishay BCcomponents SMD PTC Thermistors For Overload Protection FEATURES • • • • • • Ideal for pick-and-place circuit assembly Low mounting height Suitable for reflow soldering Small ceramic diameter for faster response |
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2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: DC DC LED Driver LDU Series xppower.com • Constant Current Output • LED Drive Current up to 1000 mA • LED Strings from 2 V to 57 V • PWM & Analog Dimming Control • High Efficiency • Open or Short Circuit LED Protection • 3 Year Warranty up to 95% |
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LDU08 LDU48: LDU08: LDU24: LDU48 LDU24 21-May-13 |