21J1A Search Results

Contextual Info: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm

RN1107ACT

Abstract: RN1108ACT RN2107ACT
Contextual Info: RN1107ACT~RN1109ACT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1107ACT,RN1108ACT,RN1109ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1112ACT

Abstract: RN1113ACT RN2112ACT RN2113ACT
Contextual Info: RN2112ACT,RN2113ACT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112ACT,RN2113ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1101ACT

Abstract: RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN1106ACT RN2101ACT RN2106ACT
Contextual Info: RN1101ACT~RN1106ACT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用

2SC6026CT

Abstract: 2SA2154CT
Contextual Info: 2SC6026CT シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026CT ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm 0.6±0.05 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大)

Contextual Info: RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110CT, RN2111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02

Contextual Info: RN1101CT ~ RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101CT, RN1102CT, RN1103CT RN1104CT, RN1105CT, RN1106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications

Contextual Info: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT, RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02

Contextual Info: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT, RN2108CT, RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

Contextual Info: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT, RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02

Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)

RN1107ACT

Abstract: RN1108ACT RN2107ACT
Contextual Info: RN1107ACT ~ RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm TOP View 0.6±0.05

Contextual Info: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm

Contextual Info: RN1101CT ~ RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101CT,RN1102CT,RN1103CT RN1104CT,RN1105CT,RN1106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

Contextual Info: RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm

Contextual Info: RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • •

Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)

Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)

641240-6

Abstract: MTA-100 2-641240-6
Contextual Info: DR/4W1NG M A D E THIS DRAWING IN 4 THIRD ANGLE IS UNPUBLISHED. <Z> PROJECTION LOC RELEASED FOR PUBLICATION COPYRIGHT 19 BY A M P INCORPORATED. DIST CM ALL INTERNATIONAL RIGHTS RESERVED. 54 REVISIONS ZONE LTR DESCRIPTION DATE REACT - 2 , - 4 , - 5 , - 6 , - 8 , 1 0

RN1110ACT

Abstract: RN1111ACT RN2110ACT RN2111ACT
Contextual Info: RN1110ACT, RN1111ACT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1110ACT,RN1111ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1110ACT

Abstract: RN1111ACT RN2110ACT RN2111ACT
Contextual Info: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm

Contextual Info: RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications •

RN1112ACT

Abstract: RN1113ACT RN2112ACT RN2113ACT
Contextual Info: RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm

Contextual Info: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications