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    FAG Bearings 6218-N-C3

    DEEP GROOVE BB, SINGLE ROW, 90MM ID, 160MM OD, 30MM WIDTH
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    RS 6218-N-C3 Bulk 2 Weeks 1
    • 1 $736.72
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    • 100 $736.72
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    Vishay Intertechnologies SUM60061EL-GE3

    MOSFETs TO263 P-CH 80V 150A
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    TTI SUM60061EL-GE3 Reel 800
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    Vishay Intertechnologies SUP60061EL-GE3

    MOSFETs TO220 P-CH 80V 150A
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    TTI SUP60061EL-GE3 Tube 500
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    218NC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FCA76N60N

    Abstract: FCA76N60 613 MOSFET
    Contextual Info: SupreMOSTM FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 218nC)


    Original
    fca76n60n218ncfca76n60613 mosfet PDF

    FCH76N60

    Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original
    fch76n60n218ncfch76n60 PDF

    FCH76N60N

    Abstract: FCH76N60 N-Channel mosfet 600v ir
    Contextual Info: SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original
    fch76n60n218ncfch76n60n-channel mosfet 600v ir PDF

    Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original
    fch76n60n218nc PDF