2147 MEMORY IC Search Results

2147 RAM

Abstract: D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147
Contextual Info: DßfFÜ^lOIL 2147 4096 Bit 4096x1 HMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2147 is a low power, high-speed 4096-bit static RAM organized 4096 words by 1 bit. It is an advanced version o f the industry standard 2147, fabricated using In­

bbc 127 324

Abstract: Register MPC555 QADC64
Contextual Info: INDEX –A– Comparator G-H value registers CMPG-CMPH 21-47 COUNTA (breakpoint counter A value and control register) 21-52 COUNTB (breakpoint counter B value and control register) 21-53 CPR0 (TPU3 channel priority register 0) 17-18 CPR1 (TPU3 channel priority register 1) 17-18

2147 RAM

Abstract: 2147 2147-3 2147-6 2147L D2147 D2147-3 D2147L M2147
Contextual Info: 2147 4 0 9 6 Bit 4 0 9 6 x 1 H M O S S ta tic RAM DMÜ^DL G E N E R A L DESCRIPTION FEA TU R ES • High speed-55ns maximum access time (2147-3) • Low power — 880mW maximum active power • Automatic low-power standby-20mA max (2147L) • Completely static -no clock required

th 2167

Abstract: 2167 memory
Contextual Info: inteT 2167 HIGH SPEED 16,384 x 1 BIT STATIC RAM 2167-55 2167-70 2167L-70 2167-10 55 70 70 100 125 125 90 90 40 40 30 30 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 0.8-2.0V Output Timing Reference Levels 2141/2147 Upgrade Double Poly HMOS II Technology

MK2147-70

Abstract: MK2147-55 vs5-24v MK2147 MK2147-85
Contextual Info: MOSTEK 4K x 1 -BIT STATIC RAM M K 2147 J -55/70/85 FEATURES □ Address Activated static m em ory— no clock or tim in g strobe required □ Sicaled Poly 5™ technology □ Industry standard 18-pin dip configuration □ Access tim e equal cycle tim e

intel 2147

Contextual Info: intei* 2147H HIGH SPEED 4096 x 1 BIT STATIC RAM 2147H-1 2147H-2 2147H-3 35 45 55 70 180 180 180 160 30 30 30 20 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 2147H Direct Performance Upgrade for 2147 Pinout, Function, and Power Compatible to Industry Standard 2147

bbc 127 324

Abstract: Register application of counter and register COMMAND REGISTER MPC555 QADC64 Motorola c
Contextual Info: APPENDIX C REGISTER DIAGRAM INDEX –B– BAR breakpoint address register 21-46 BBCMCR (BBC module configuration register) 4-11 BR0 (BR3 - memory controller base registers 0 - 3) 10-28 –C– CANCTRL0 (control register 0) 16-25 CANCTRL1 (control register 1) 16-26

UPD2147

Abstract: 2147 memory ic
Contextual Info: NEC |xPD2147A 4 ,0 9 6 x 1 -BIT STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The [J.PD2147A is a 4096-bit static Random Access Memory organized as 4096 words by 1 bit, using a scaled MOS tech­ nology. It uses a uniquely innovative design approach which

2147 intel

Contextual Info: in te i 2147H HIGH SPEED 4096 x 1 BIT STATIC RAM 2147H-1 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 2147H-2 2147H-3 2147H 2147HL 35 45 55 70 70 180 180 180 160 140 30 30 30 20 10 Pinout, Function, and Power Com­ patible to Industry Standard 2147

Contextual Info: & PIC16CR57A M ic r o c h ip ROM-Based 8-Bit CMOS Microcontroller FEATURES FIG UR E A - PIN C O N FIG U R A TIO N S 2 Compatibility PDIP, SOIC • Pin and software com patible with PIC16C57 High Performance RISC-like CPU • Only 33 single word instructions to learn

MCM2147

Abstract: MCM2147-100 MCM2147-55 MCM2147-70 MCM2147-85
Contextual Info: g M O TO R O LA 4096-B IT STATIC RANDOM ACCESS M EM O RY The M C M 2147 is a 4 0 9 6 - b it s ta tic ra n d o m access MOS m e m o ry (N -C H A N N E L , S IL IC O N -G A T E ) org a n ize d as 4 0 9 6 w o rd s b y 1 -b it using M o to r o la 's N -c h a n n e l s ilic o n ­

Intel 2147H

Abstract: intel 2147 2147 intel 2147H 2147H-1 2147H-2 2147H-3 2147HL 2147HL-3
Contextual Info: in te i 2147H HIGH SPEED 4096 x 1 BIT STATIC RAM 2147H-2 2147H-3 2147HL-3 2147H 35 45 55 55 70 70 Max. Active Current mA 180 180 180 125 160 140 Max. Standby Current (mA) 30 30 30 15 20 10 2147H-1 Max. Access Time (ns) Pinout, Function, and Power Com­ patible to Industry Standard 2147

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

am2147 data

Abstract: AM2147-35 AM2147-45 AM2147-55 AM2147-70 AM21L47-45 AM21L47-55 CD000100 AM2147 cd018
Contextual Info: Am2147/Am21 L47 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS High speed — access times down to 35 ns maximum Automatic power-down when deselected Low power dissipation _ High output drive TTL compatible interface levels No power-on current surge GENERAL DESCRIPTION

intel 2167

Abstract: 2167-55 intel 2147 TT 2141 2167L-70 2141 intel ajc3 2167-10
Contextual Info: in t é f IPIRiglLOGHODßOAIOT 2167 HIGH SPEED 16,384 x 1 BIT STATIC RAM 2167-55 2167-70 2167L-70 2167-10 55 70 70 100 125 125 90 90 40 40 30 30 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 2141/2147 Upgrade • 0.8-2.0V Output Timing Reference

intel 2167

Abstract: intel 2147 2167L-70 TLZ12
Contextual Info: in te T IPElHyMOGMW 2167 HIGH SPEED 16,384 x 1 BIT STATIC RAM 2167-55 2167L-70 2167-10 55 70 70 100 125 125 90 90 40 40 30 30 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 2167-70 • 0.8-2.0V Output Timing Reference Levels 2141/2147 Upgrade

NMOS 2147H

Abstract: intel h55 intel 2147 intel h55 circuit diagram K 4096 cross reference data MBM2147H
Contextual Info: F U JIT SU MBM2147H-70 MBM2147H-55 M IC R O E L E C T R O N IC S MOS 4096-BIT STATIC RANDOM ACCESS MEMORY MBM2M7B35 DESCRIPTION single +5V DC supply. For ease of use, chip select C5 permits the selection of an individual package when outputs are ORtied, and automatically powers

Contextual Info: PV P152 I N TELLI GEN T STEPPER M OTOR CON TROLLER WI TH I N TEGRAL D RI V E ESTOP RS232 FROM HOST Tx FWD LIMIT Rx REV LIMIT DATUM RS232 TO Tx NEXT MODULE Rx JOG FWD JOG REV PVP152 INTELLIGENT STEPPER CONTROLLER RESET STEPPER MOTOR PULSE STANDARD STEPPER DRIVE

AM2147-35

Abstract: AM2147-45 AM2147-55 AM2147-70 AM21L47-45 AM21L47-55 AM2148 Am27C256
Contextual Info: Am2147/Am21 L47 AdvMicro 4096x1 Static RAM _ DeviceS DISTINCTIVE CHARACTERISTICS • • • — access times down to 35 ns maximum Automatic power-down when deselected Low power dissipation H ig h speed • High output drive • compatible 'evels * No power-on current surge

IC TTL 7432

Abstract: IC 7402, 7404, 7408, 7432, 7400 ttl 74118 74189 memory ic 74138 74189 ttl memory TTL 74289 RC4458 IC 74373 ttl 74592
Contextual Info: Test and Measurement Systems Electronic Manufacturing Services ABI Electronics Limited Dodworth Business Park Barnsley S75 3SP South Yorkshire United Kingdom Tel: +44 0 1226 207420 Fax: +44 (0)1226 207620 www.abielectronics.co.uk ChipMaster Compact Professional IC List

S 2148

Contextual Info: SN54BCT2828A, SN74BCT2828B 10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS SC BS058A-APRIL 1987 - REVISED NOVEMBER 1993 SN54BCT2828A . . . JT OR W PACKAGE SN74BCT2828B . . . DW OR NT PACKAGE TOP VIEW • State-of-the-Art BiCMOS Design Significantly Reduces I q c z

2-02X

Contextual Info: CY2147 CYPRESS SEMICONDUCTOR 4096 x 1 Static R/W RAM Features Functional Description • Automatic power-down when dese­ lected • CMOS for optimum speed/power • High speed — 35 ns • Low active power — 690 raW commercial — 770 mW (military) • Low standby power

2141 ram

Abstract: K 2141 2141L-3 2141L-4 2141L-5 2141 intel 2147 intel intel 2141
Contextual Info: intei 2141 4096 X 1 BIT STATIC RAM 2141-2 2141-3 2141-4 2141-5 2141L-3 2141L-4 2141L-5 Max. Access Time ns 120 150 200 250 150 200 250 Max. Active Current (mA) 70 70 55 55 40 40 40 Max. Standby Current (mA) 20 20 12 12 5 5 5 • HMOS Technology ■ Industry Standard 2147 Pinout

Contextual Info: k~Ü E 'W _ CY7C147 4096 x 1 Static RAM SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected • CMOS for optimum speed/power • Highspeed — 25 ns • Low active power — 440 mW commercial