2144C Search Results

em4 tube

Abstract: CP Clare RELAY NEC varistor solid state 3v PLCA110 SSP15 Semiconductor Common Design Parts Catalog
Contextual Info: CP Clare PLCA110 Performance Specifications c o r p o r a t i o n PLCA110 Integrated Solid State Surge Arrester and Solid State Relay DESCRIPTION CP Clare’s PLCA110 device features a 1 Form A Solid State Relay integrated with a Solid State Surge Arrester in an 8 pin DIP package.

CR001

Abstract: 500LUX
Contextual Info: TECHNICAL DETAIL & LAB TEST REPORT FEATURES AND PATTERN www.dbmlighting.com Medium Beam for Cree MT-G Lens Reference CR-001 Tested with LED CREE MT-G 36V & 6V PMMA Lens Material -40ºC+90ºC Operating temperature OPTICAL EFFICIENCY 27.0 deg Collection Efficiency:

D3964

Abstract: TLE2144I
Contextual Info: TLE2144, TLE2144A,TLE2144Y EXCALIBUR LOW-NOISE HIGH-SPEED PRECISION QUAD OPERATIONAL AMPLIFIERS D3964, N O VEM BER 1991 a v a ila b le fe a t u r e s Low Noise: 10 Hz 1 kHz Low Vio . . . 1.5 mV Max at 25°C 15 nV/Vflz 10.5 nV/VHz Single or Split Supply . . . 4 V to 44 V

Contextual Info: CLARE C P / SOLI» STATE CP Ciane CORPORATION bbE D • 2144^04 0DD0BÜ5 221 « C P C L “TS” Sériés Solid State Products Division OptoMOS “TS” Series Multifunction Solid State Telecom Switches DESCRIPTION CP C lare’s “TS” series telecom switches provide optimal function density for

Contextual Info: 12 II 9 IS T 8 6 I 6255 3 | 2 NO OF DIM. CKTS A - 6255- A - A N * 3 n n n n .25 nnnnn 19.81 ±. 13 ( 2 3 .6 7 ±. 15 .932 ) ( 27.74 ±. 15 ) ( 31.70 ±. 15 ( 3 I. 6 0 ±. 18 ) ( 3 5 .6 6 ±.18 ( 3 5 .5 6 ±. 18 ) ( 3 9 .5 2 ±.20 ) ( 4 3 .4 8 ±.20 (102)

2144C

Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth -3 dB 1 GSPS (min) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 GSPS, FIN = 20 MHz

6264l

Abstract: 27C301G 27c301 fp 101g TI232 6116asp 50464cp ls 11m M62256FP 02S-0
Contextual Info: • PACKAGE INFORMATION • Dual-In-line Plastic U n it: m m inch Scale 1/1 • DP-16B • DP-18B 2 54 + 0 25 0 48 < 0 I (0 100 ‘ 0 0 1 0 ) (0 019 * 0 004) -X - 4 4 .- . 0 48 t 0 I ? 54 f 0 25 ~ (0 019 ± 0 004) (0 100 ± 0 010) • DP-20N • DP-18C 2 2 2 6 (0 1 7 6 )

HM6788P-25

Abstract: 6788P s12045 28-pin SOJ SRAM
Contextual Info: • RELIABILITY OF HITACHI 1C MEMORIES 1. STRUCTURE IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic o f bipolar memo­ ries is high speed but small capacity, instead, MOS

27c301

Abstract: HM6788P-25 HM6788
Contextual Info: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.