2114 ROM Search Results

ir receiver module sj 1838

Abstract: kbu 810 g rba9 Nippon capacitors 665a
Contextual Info: H8S/2114 Group 16 Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2114 Rev.1.00 2003.10.31 R4F2114 Rev. 1.00, 10/03, page ii of xlii Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products

2114 1k x 4 SRAM

Abstract: 2114 static ram 2114 ram 2114 SRAM sram 2114 OSC CMOS 32.768K ST2108 2063 static ram btm 330 LA 4440
Contextual Info: ST Sitronix PRELIMINARY ST2108 8 BIT Microcontroller with 1M bytes ROM Notice: This is not a final specification. Some parameters are subject to change. 1. FEATURES n n n n n n n n n n Totally static 65C02S CPU ROM: 1M x 8-bit RAM: 4K x 8-bit Stack: Up to 128-level deep

2114 static ram

Abstract: sram 2114 2114 ram RAM 2114 psg010 2114 1k x 4 SRAM 2114 SRAM 4 bit dac OSC CMOS 32.768K 2063 static ram
Contextual Info: ST ST2108 8 BIT Microcontroller with 1M bytes ROM Notice: Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. This is not a final specification. Some parameters are subject to change. 1. FEATURES Totally static RISC CPU

information applikation

Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Contextual Info: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

M5M27401AK12

Abstract: M5M27401AK-15 M5M27401
Contextual Info: MITSUBISHI LSIs M 5M 27401A K - 10,- 12,- 15 4194304-BIT 524288-WORD BY 8-BIT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The Mitsubishi M5M27401AK is a high-speed 4194304-bit ultraviolet erasable and electrically reprogrammable read only

K4096

Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
Contextual Info: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E

ir 7811

Abstract: IMPLOTEC philips 23 Philips 336 TA 2092 N BP317 BYD33J
Contextual Info: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS Fact Sheet 079 High-quality glass-passivated diodes Implotec BYD33J competitor investigation This publication offers a direct comparison between Philips Semiconductors’ glass-passivated BYD33J diode family (based on

BYV27-200 DO-41

Abstract: philips 23 Philips 336 TA 2092 N BP317 BYV27-200
Contextual Info: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS Fact Sheet 080 High-quality glass-passivated diodes Glass Bead BYV27-200 competitor investigation This publication offers a direct comparison between Philips Semiconductors’ BYV27-200 Glass Bead diode family and two

BFG425W

Abstract: BP317 micro amplifier 471 Hewlett-Packard transistor microwave philips 23 0805CS philips application notes
Contextual Info: APPLICATION INFORMATION 1.9 GHz low noise amplifier with the BFG425W Philips Semiconductors Application information 1.9 GHz low noise amplifier with the BFG425W CIRCUIT DIAGRAM R5 handbook, full pagewidth C6 R1 R4 R3 C2 C3 +Vsupply C4 L2 L1 input 50 Ω C5

BP317

Abstract: BYX132G
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX132G FEATURES DESCRIPTION • Glass passivated

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D459 BYX135GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed

philips 23

Abstract: BP317 BYX133GL
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133GL High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GL FEATURES DESCRIPTION • Glass passivated

1PS76SB21

Abstract: "MARKING CODE S1" smd schottky diode marking 72 sod323 diode marking code 74
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D049 1PS76SB21 Schottky barrier diode Product specification Supersedes data of 1998 Jul 16 1999 May 05 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 FEATURES DESCRIPTION • Ultra fast switching speed

philips 23

Abstract: BP317 BYX133G
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX133G FEATURES DESCRIPTION • Glass passivated

"marking code PA"

Abstract: 359 marking marking code C3 SMD Transistor philips c3 st smd diode marking code BB151 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB151 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB151 PINNING • Very low capacitance spread

Transistor A 471

Abstract: 2PB710AR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PB710A PNP general purpose transistor Product specification Supersedes data of 1999 Apr 23 1999 May 31 Philips Semiconductors Product specification PNP general purpose transistor 2PB710A FEATURES PINNING

BB145

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 Low-voltage variable capacitance diode Product specification Supersedes data of 1999 Sep 15 1999 Dec 15 Philips Semiconductors Product specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145 is a planar technology

2108 npn transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 2PC4617 NPN general purpose transistor Product specification Supersedes data of 1998 Jul 21 1999 May 21 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617 FEATURES PINNING • Low current max. 100 mA

Philips MARKING CODE

Abstract: Philips MARKING CODE a91 mv marketing code sot23 "MARKING CODE A9*" BAS17 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS17 Low-voltage stabistor Product specification Supersedes data of 1996 Mar 20 1999 May 31 Philips Semiconductors Product specification Low-voltage stabistor FEATURES BAS17 PINNING • Low-voltage stabilization

smd schottky diode 82

Abstract: Philips MARKING CODE BAT720 marking code 10 sot23 smd diode schottky code marking 29 smd diode schottky code marking 63 BP317 70-9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 BAT720 Schottky barrier diode Product specification Supersedes data of 1998 Jan 21 1999 May 26 Philips Semiconductors Product specification Schottky barrier diode BAT720 FEATURES DESCRIPTION • Ultra high switching speed

BB143

Abstract: BP317 marking code l
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB143 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB143 PINNING FEATURES • Excellent linearity

BB142

Abstract: st smd diode marking code BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB142 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB142 PINNING FEATURES • Excellent linearity

301 marking code PNP transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 2PA1576 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 28 1999 May 31 Philips Semiconductors Product specification PNP general purpose transistor 2PA1576 FEATURES PINNING