210R Search Results

210R

Contextual Info: 210R CALIFORNIA MICRO DEVICES THIN FILM RESISTOR SERIES California Micro Devices’ 210R Series multi-terminal resistor chip offers the hybrid designer a component that provides a wide range of resistance values on a single chip. Bonding pads segment the total resistance into five single elements of

MS51957-14

Abstract: MS51957-14 screw
Contextual Info: L 09-JAN-03 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. GHT 19 ,19 REVI SI ONS ALL RIGMTG RDGCRVCD. DF P AO LTR B a4-40 DESCRIPTION REV PER 0G3D-0569-02 DATE DWN APVD 1- 0 3 CT 5G 0NC-2E! 2 PLC 210REF . 6 2 5- i 900+.010 0 7 0-

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Resistors > Product Feature Selector > Product Details CRC1/210RKTB Product Details

relay

Abstract: 220vac relay HRS1K HRS1KH3-12 Specifications of relay HRS1KH
Contextual Info: ‘215’ Relay Output Product Specification ‘215’ Relay Output Module Relay Outputs 1 - 4 210 Rx 215 Relay Outputs 5 - 8 This DIN Rail module connects directly to any of the 210Rx output connectors and provides; • 8 relay switches rated 230Vac at 3A

Contextual Info: 210R CALIFORNIA MICRO DEVICES THIN FILM RESISTOR SERIES California Micro Devices’ 210R Series multi-terminal resistor chip offers the hybrid designer a component that provides a wide range of resistance values on a single chip. Bonding pads segment the total resistance into five single elements of

relay

Abstract: 12vdc 30a relay 230VAC to 12VDC POWER SUPPLY relay 12vdc Specifications of relay 230R 12vdc relay DS2301
Contextual Info: 230 Relay Output Product Specification 230 Relay Output Module 210 Rx 230 Relay Outputs 1 - 4 This DIN Rail module connects directly to the 210Rx and provides • Four relay type K7SFA12 outputs rated for up to 30A at 230Vac. • Each relay provides ‘input’ and ‘normally open’ quick connect terminations.

relay

Abstract: RF Solutions Specifications of relay 216R
Contextual Info: 216 Relay Output Product Specification 216 Relay Output Module 210 Rx 216 Relay Outputs 1 - 4 This DIN Rail module connects directly to the 210Rx and provides • Four relay outputs rated at 230Vac providing 12A peak and 5A continuous current rating. • Each relay provides ‘input’, ‘normally open’ and ‘normally closed’ screw terminals.

210R

Contextual Info: 210R CALIFORNIA MICRO DEVICES THIN FILM RESISTOR SERIES California Micro Devices’ 210R Series multi-terminal resistor chip offers the hybrid designer a component that provides a wide range of resistance values on a single chip. Bonding pads segment the total resistance into five single elements of

211R

Abstract: RF Solutions transistor 131-6
Contextual Info: ‘211’ Output Module Product Specification ‘211’ Switched Channel Output Module Switched Outputs 1-4 Switched Outputs 9-12 Ground Connections 211 210 Rx Switched Outputs 5-8 Switched Outputs 13-16 The 211 DIN Rail module may be connected directly to any of the 210Rx outputs and provides;

Contextual Info: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD2127 SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS. 10*0.3 03.2±O.2 . High DC Current Gain : hi?E=500~1500 Ic= 0-5A . Low Collector Saturation Voltage : V C E (Sat)=0-3V(Max.)

2SK2679

Abstract: 2SK2679(T)
Contextual Info: TO SHIBA 2SK2679 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2679 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

DIODE ED 34

Contextual Info: TO SHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3

Contextual Info: TOSHIBA GT8J101 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT G T 8 J 1 01 U nit in mm HIGH P O W ER SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS 10 + 0.3 • • • • ¿ 3 .2 ± 0 2 2 .7 ± 0 .2 H igh Input Impedance High Speed

2SC5172

Contextual Info: 2SC5172 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS SW ITCH IN G REG U LATO R A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. U n it in nun 10*0.3 HIGH SPEED D C-DC CO N VERTER APPLICATIONS. • E xcellent Sw itching Times : tr = 0.7/js (M ax.), tf= 0 .5 //s (M ax.) a t I c = 3A

Contextual Info: TOSHIBA GT10G101 T O SH IB A IN SU LA T E D GATE BIPO LA R T R A N SIST O R SILICO N N -C H A N N E L IGBT G T 1 0 G 1 01 Unit in mm STRO BE FLASH A P PL IC A T IO N S • • • • High Input Impedance Low Saturation Voltage : VcE sat = 8V (Max.) (Iq = 130A)

1117 S Transistor

Contextual Info: TO SHIBA GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10±0.3 03.2 ±0•2 2.710.2 m The 3rd Generation Enhancement-Mode High Speed : tf = 0.30,«s Max. (Iq = 5A)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4881 U nit in mm HIGH C U R R EN T SW IT C H IN G A PPLIC A TIO N S. 10 + 0.3 • • 2 1 ±0 .2 ¿ 3 2 + 0 ,? Low Saturation Voltage : VCE sat = 0.4V (MAX.) (IC = 2.5A, IB = 125mA) High Speed Sw itching Time : tgt,g = 0.8/iS (Typ.)

2SJ438

Contextual Info: TOSHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ438 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS (.2 ± 0 .2 2.710.2

Contextual Info: TOSHIBA 2SK2842 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2842 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 9.0S (Typ.)

K2717

Abstract: transistor k2717
Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.4 S (typ.)

2SK41

Abstract: k4114
Contextual Info: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)

Contextual Info: TK6B60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6B60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)

2SC5563

Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics