2108D Search Results

2-94B1A

Abstract: 2-108A4A
Contextual Info: TOSHIBA [3 1 Package Dimensions [3 ] Package Dimensions Unit: mm 79 + 0 .5 L-il-U I I L— l ‘X-L- r i I 2-33F1 A *5,7+ 0.! I (2-33D1 A) <4 5±0 2 14-FAST-ON-TASifllO Ci H fl il 1 H 1. (+) 7.W 2.GU 8 GX 3. U 9 .GY 4.GV 5.V 10.GZ L i.(- ) t 1 6 GW (2-78A1 A)

Contextual Info: MG75Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS51 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3 µs Max @Inductive load l Low saturation voltage : CE (sat) = 3.6 V (Max) l Enhancement-mode

Radiall r112

Abstract: analog/DIODE MA Radiall R125 620 FR4 epoxy dielectric constant 4.4 Radiall R125 DIODE g8 RO4003 TS81102G0 TSEV83084G0 TSEV8388BG
Contextual Info: DMUX 8-/10-bit 1:4/1:8 2 Gsps TSEV81102G0 Evaluation Board . User Guide Table of Contents Section 1 Overview . 1-1

MG75Q2YS51

Contextual Info: MG75Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @Inductive load Low saturation voltage : CE (sat) = 3.6 V (Max) Enhancement-mode

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

T5027

Abstract: transistor t5027 C133-30 T0525 T1027 C136H C136-10 t1015 C136 transistor c114
Contextual Info: For a wide variety of MICROWAVE COMPONENTS DIRECTIONAL COUPLERS HIGH POWER DIRECTIONAL COUPLERS Design: Stripline RF Power: 50 Watt average 3 KW peak Standard Coupling: 10, 20, and 30dB Coupling Flatness: + 1.0 dB full band RF Connectors: SMA and Type N. Design: Stripline