20V P-CHANNEL POWER MOSFET 100A Search Results

utc 324

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

MLP832

Abstract: ZXMP62M832 ZXMP62M832TA
Contextual Info: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure

Contextual Info: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

IRF P CHANNEL MOSFET

Abstract: irf p channel IRF5851 IRF5800 IRF5850 SI3443DV
Contextual Info: PD-93998 IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International

IRL5NJ7404

Contextual Info: PD - 94052A LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF7425

Abstract: MS-012AA
Contextual Info: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.

IRF5820

Abstract: SI3443DV IRF5800 IRF5850
Contextual Info: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD-94052B LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A SMD-0.5 Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: AP4500GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 Low Gate Charge N-CH BVDSS D2 20V RDS ON D1 D1 30m ID Fast Switching Performance G2 P-CH BVDSS S2 SO-8 6A G1 S1 -20V

power MOSFET IRF data

Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Contextual Info: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

UT3419

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.

Contextual Info: FOR REVIEW ONLY IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -20V 90@VGS = -4.5V 135@VGS = -2.5V -2.9A -2.3A Description These P-channel HEXFET® Power MOSFETs from

Contextual Info: AP4961GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Lower On-resistance D2 D1 ▼ Simple Drive Requirement D1 ▼ Dual P MOSFET Package -20V RDS ON 28mΩ ID G2 S2 SO-8 BVDSS -7A G1 S1 Description

"Package SO-8"

Contextual Info: AP4961GM RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Lower On-resistance D2 D1 ▼ Simple Drive Requirement D1 ▼ Dual P MOSFET Package -20V RDS ON 28mΩ ID G2 S2 SO-8 BVDSS -7A G1 S1 Description

IRF5820

Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Contextual Info: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

IRF5850

Contextual Info: PD - 95506A IRF5850PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International

RF710

Abstract: irf7317
Contextual Info: PD - 9.1568B In terna tional IOR Rectifier IRF7317 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MO SFET un di g N-Ch P-Ch 20V -2 0 V ~m D1 1 m~-

mosfet ir 840

Abstract: IRLML6402 irlml6402 equivalent IRLML6402 micro3 IC BA 9 AN-994 g 995
Contextual Info: PD- 93755 IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

IRLML6402

Abstract: AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502
Contextual Info: PD - 93755B IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

IRF7317

Abstract: MS-012AA
Contextual Info: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V