20V N-CHANNEL MOSFET Search Results

CMRDM Series

Abstract: PB CMRDM Series CMRDM CMRDM3590
Contextual Info: Product Brief CMRDM3590 20V, 160mA N-Channel CMRDM7590 (20V, 140mA P-Channel) CMRDM3575 (20V, N-Channel & P-Channel) Dual, MOSFETs in the SOT-963 package SOT-963 Typical Electrical Characteristics Central Semiconductor’s CMRDM3590 (N-Channel), CMRDM7590

ZXM63C02

Abstract: MO-187 ZXMD63C02X ZXMD63C02XTA ZXMD63C02XTC DSA003665
Contextual Info: ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=20V; RDS(ON)=0.13⍀; ID=2.4A P-CHANNEL: V(BR)DSS DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique

FDMJ1032C

Abstract: marking 032 SC-75 Dual N & P-Channel
Contextual Info: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement

CTLDM3590

Contextual Info: Product Brief CTLDM3590 20V, 160mA N-Channel CTLDM7590 (20V, 140mA P-Channel) TLM3D6D8 package MOSFETs in the TLM3D6D8 package Top View Bottom View Typical Electrical Characteristics Central Semiconductor’s CTLDM3590 (N-Channel) and CTLDM7590 (P-Channel) are enhancement-mode MOSFETs designed for

CEDM7001

Abstract: CEDM8001 sot top marking codes
Contextual Info: Product Brief CEDM7001 N-Channel CEDM8001 (P-Channel) SOT-883L 20V, 100mA, MOSFETs in the ultra miniature SOT-883L package Top View Bottom View Typical Electrical Characteristics The Central Semiconductor CEDM7001 (N-Channel) and complementary CEDM8001 (P-Channel) are single 20V, 100mA

A1 dual diode

Abstract: ZXMN2AM832 log sheet air conditioning MLP832 ZXMN2AM832TA ZXMN2AM832TC
Contextual Info: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure

Contextual Info: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure

DM13A

Abstract: log sheet air conditioning MLP832 ZXMN2AM832 ZXMN2AM832TA ZXMN2AM832TC
Contextual Info: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure

CMRDM3575

Abstract: PB CMRDM3575 SOT-963
Contextual Info: Product Brief CMRDM3575 N-Channel and P-Channel Complementary MOSFETs in the SOT-963 SOT-963 Typical Electrical Characteristic The new dual complementary CMRDM3575 consists of a 20V, 160mA N-Channel MOSFET and a 20V, 140mA P-Channel MOSFET. Packaged in the ultra miniature SOT-963 surface

equivalent smd mosfet

Abstract: common-drain MOSFET TSSOP-8 dual n-channel IC MOSFET QG MOSFET TSSOP-8 SI6968BEDQ nc245 65a30 si6968
Contextual Info: MOSFET IC SMD Type Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection KI6968BEDQ(SI6968BEDQ) TSSOP-8 Unit: mm Features VDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5A VDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5A N-Channel N-Channel * Typical value by design

Contextual Info: ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=20V; RDS(ON)=0.13⍀; ID=2.4A P-CHANNEL: V(BR)DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

f17a

Abstract: MO-187 ZXMD63C02X ZXMD63C02XTA ZXMD63C02XTC
Contextual Info: ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=20V; RDS(ON)=0.13⍀; ID=2.4A P-CHANNEL: V(BR)DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

sot 23-5 marking code fairchild

Abstract: MARKING PA TR SOT-23 marking 305 marking pk sot23 power trench sot-23 fairchild
Contextual Info: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge

FDV305N

Abstract: W-5-R
Contextual Info: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge

09A16

Abstract: FDV305N
Contextual Info: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge

AN9321

Abstract: AN9322 RF1S45N02L RF1S45N02LSM RF1S45N02LSM9A RFP45N02L
Contextual Info: RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes

apm4500a

Abstract: 6401W APM4500AK APM4500
Contextual Info: APM4500AK Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 20V/8A, RDS(ON) =22mΩ(typ.) @ VGS = 4.5V RDS(ON) =30mΩ(typ.) @ VGS = 2.5V • P-Channel Top View of SOP − 8 -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

Contextual Info: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,

RFP45N02L

Contextual Info: HARRIS S E M I C O N D U C T O R RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022D, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the

APM2700A

Abstract: APM2700AC STD-020C
Contextual Info: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,

apm9936

Abstract: APM9936K STD-020C
Contextual Info: APM9936K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 20V/6A, RDS(ON) =27mΩ (typ.) @ VGS = 4.5V RDS(ON) =40mΩ (typ.) @ VGS = 2.5V • P-Channel Top View of SOP − 8 -20V/-4A, RDS(ON) =60mΩ (typ.) @ VGS =-4.5V

APM4500A

Abstract: APM4500 MOSFET N-CH 200V STD-020C
Contextual Info: APM4500AK Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/8A, RDS(ON) =22mΩ(typ.) @ VGS = 4.5V RDS(ON) =30mΩ(typ.) @ VGS = 2.5V • P-Channel Top View of SOP − 8 -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

Contextual Info: FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS ON = 50 mΩ @ VGS = 4.5 V

AN7254

Abstract: AN7260 AN9321 AN9322 RFD16N02L RFD16N02LSM RFD16N02LSM9A
Contextual Info: RFD16N02L, RFD16N02LSM 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of