20NOTE Search Results

MAAP-000079-SMB001

Abstract: AN3016 AN3019 MAAP-000079-PKG001 MAAP-000079-SMB004 MAAPGM0079-DIE 6 ghz amplifier 20w
Contextual Info: Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ ♦ 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage 8-10V Operation MSAG Process

DM6030HK

Abstract: MAAP-000077-SMB004 AN3016 DM4030LD MAAP-000077-PED000 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAPGM0077-DIE
Contextual Info: Amplifier, Power, 13W 0.7-2.5 GHz MAAP-000077-PED000 Rev — Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation

triac gate control circuits

Abstract: washing machine circuit diagram TRIAC dimmer control BCR5AM-12LB BCR5AM-12LB-A8 PRSS0004AA-A
Contextual Info: BCR5AM-12LB Triac Medium Power Use The product guaranteed maximum junction temperature of 150°C REJ03G0452-0300 Rev.3.00 Nov 30, 2007 Features • Non-Insulated Type • Planar Passivation Type • IT(RMS) : 5 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6

uPD70F3385

Abstract: V850ES/FK3 uPD70F3383 V850ES FK3 N uPD70F3384 PD70F3379 uPD70F3373 PD70F3370A uPD70F3371 PD70F3383
Contextual Info: Data Sheet V850ES/FK3 32-bit Single-Chip Microcontroller Hardware µPD70F3383 A µPD70F3383(A1) µPD70F3383(A2) Document No. U18568EE1V2DS00 Date Published March 2008 NEC Electronics 2008 Printed in Germany µPD70F3384(A) µPD70F3384(A1) µPD70F3384(A2)

MAAP-000070-PKG003

Abstract: AP070G MAAP-000070-MCH000 MAAP-000070-SMB003 MAAP-000070-SMB004 S2083 VD12 im339
Contextual Info: RoHS Compliant MAAP-000070-PKG003 Amplifier, Power, 1.6W 10.0-13.25 GHz PIN 1 N/C N/C N/C VGG Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate (MSAG) Process. The 5 mm PQFN package has a lead-free finish of leads that

MAAPGM0077-DIE

Abstract: AN3016 AN3019 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAP-000077-SMB004
Contextual Info: Amplifier, Power, 13W 0.7-2.5 GHz MAAPGM0077-DIE Rev B Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description The MAAPGM0077-DIE is a 2-stage 13W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It

MAAP-000068-SMB003

Abstract: AP06 MAAP-000068-PKG003 MAAPGM0068-DIE S2083 AP068G 033A3
Contextual Info: RoHS Compliant MAAP-000068-PKG003 Amplifier, Power, 1.2W 5.7-8.5 GHz Rev B Preliminary Datasheet Features ♦ 1.2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description YYWW AP068G XXX M ACOM The MAAP-000068-PKG003 is a 3-stage 1.2 W power amplifier with on-chip bias networks in a 20 lead, 5 mm PQFN

AP021G

Abstract: MAAP-000021-PKG003 MAAP-000021-SMB003 MAAPGM0021 MAAPGM0021-DIE MAAPGM0021-SMB S2083
Contextual Info: RoHS Compliant MAAP-000021-PKG003 Amplifier, Power, 2W 5.0-8.5 GHz Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ 2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG Process 5x5 mm 20 Lead MLP Package YYWW AP021G XXXX

ap067g

Abstract: MAAP-000067-PKG003 MAAP-000067-SMB003 MAAP-000067-SMB004 MAAPGM0067-DIE S2083
Contextual Info: RoHS Compliant MAAP-000067-PKG003 Amplifier, Power, 2W 5.7-8.5 GHz Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ 2 Watt Saturated Output Power Level Variable Drain Voltage 6-10V Operation MSAG Process 5x5 mm 20 Lead PQFN Package YYWW AP067G XXXX

Contextual Info: MAATGM0004 Attenuator, Digital, 5-Bit 0.1—20.0 GHz M/A-COM Products Rev A Features ♦ ♦ ♦ ♦ 5-Bit Attenuator, 23 dB Range, LSB = 0.75 dB 0.1 to 20.0 GHz Operation TTL Control Inputs RoHS Compliant Description The MAATGM0004-Die is a 5-bit Digital Attenuator with Parallel Input

ma4p

Contextual Info: MA4P HIPAX High Power PIN Diodes RoHs Compliant Rev. V8 Package Styles Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Handling Low Loss / Low Distortion Voltage Ratings up to 1000 Volts Passivated Chip for Low Leakage Current Low Theta θ Due to Full Face Chip Bonding

Contextual Info: MAAP-000078-PED000 Amplifier, Power, 12W 2.0—6.0 GHz M/A-COM Products Preliminary: Rev B Features ♦ 12 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation

x-band power amplifier

Abstract: DM6030HK
Contextual Info: Amplifier, Power, 16W 1.3-2.5 GHz MAAP-000076-PED000 Rev A Preliminary Datasheet Features ♦ 16 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation

536EP

Abstract: UPD70F3079AYGC-8EU tsc102 703078AY FA100GC-8EU FA-100GC-8EU
Contextual Info: User’s Manual TM V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703076AY µPD703078AY µPD703078Y µPD703079AY µPD703079Y µPD70F3079AY µPD70F3079Y Document No. U14665EJ3V0UD00 3rd edition Date Published January 2003 N CP(K) 2000, 2003

Contextual Info: MAAP-000021-PKG003 Amplifier, Power, 2W 5.0—8.5 GHz M/A-COM Products Preliminary: Rev B Features ♦ ♦ ♦ ♦ ♦ 2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG Process 5x5 mm 20 Lead MLP Package RoHS Compliant YYWW

MADP-017015-1314

Contextual Info: MADP-017015-1314 MADP-030015-1314 SURMOUNT 15µM PIN Diodes RoHs Compliant M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ Case Style ODS 1314 0603 Surface Mount 15µm I-Region Length Devices No Wirebonds Required Rugged Silicon-Glass Construction

MA4P506-1072

Abstract: MA4PH237-1079T MA4P505-1072
Contextual Info: MA4P100 thru MA4P600 Series Packaged PIN Diodes M/A-COM Products Rev. 4 Features ♦ ♦ ♦ ♦ ♦ ♦ High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1500 Volts Long Carrier Lifetime Designs Wide Variety of Hermetic packages High Reliability for Space/Military Applications

AN3016

Abstract: AN3019 MAAP-000074-PKG001 MAAP-000074-SMB001 MAAP-000074-SMB004 MAAPGM0074-DIE
Contextual Info: Amplifier, Power, 8W 2.0-8.0 GHz MAAPGM0074-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ 8 Watt Saturated Output Power Level 2-Octave Bandwidth Variable Drain Voltage 4-10V Operation MSAG Process Description The MAAPGM0074-DIE is a 2-stage 8W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It

MA4P506-1072

Abstract: MA4P709-150 MA4P506-30 MA4P505-1072 MA4P505-30 MA4P504-1072 MA4P504-30 MA4PH237-1079T MA4P505 MA4PH235-1072
Contextual Info: Also Offering RoHS Compliant Equivalent Parts Packaged PIN Diodes Features • • • • • • High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1500 Volts Long Carrier Lifetime Designs Wide Variety of Hermetic packages High Reliability for Space/Military Applications

MAAM-007524-PKG003

Abstract: S2083
Contextual Info: RoHS Compliant MAAM-007524-PKG003 Amplifier, Driver 10.0-15.4 GHz 5V 8V 18 dB Typical Gain Good Input and Output Return Losses Good Gain Flatness over Individual Bands Designed for Linear Applications 5 to 8 Volt Single-Bias Operation MSL 1 PIN 1 N/C N/C

178078gf

Abstract: philips semiconductor data handbook U12326E U12790E uPD178076gf
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD178076,178078,178096,178098 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µPD178076, 178078, 178096, and 178098 are 8-bit single-chip CMOS microcontrollers containing hardware for digital tuning systems. These microcontrollers employ a 78K/0 series architecture CPU and allow easy access to internal memories at

780308

Abstract: 780308y uPD780306Y uPD780308 uPD780308Y uPD78P0308Y U12326E BNC assembly instructions
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD780306Y,780308Y 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION µPD780306Y and 780308Y are products in the µPD780308Y subseries within the 78K/0 series, which incorporates LCD controller/driver, 8-bit resolution A/D converter, timer, serial interface, interrupt functions and many other peripheral

6858 pin

Abstract: MA4AGSBP907 01346E
Contextual Info: MA4AGSBP907 AlGaAs Solder Bump Flip-Chip PIN Diode RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Mounting Side with Solder Bumps Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed

BCR5KM-12LA

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid