Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    20N60B2D1 Search Results

    SF Impression Pixel

    20N60B2D1 Price and Stock

    IXYS Corporation

    IXYS Corporation IXSQ20N60B2D1

    IGBT PT 600V 35A TO-3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSQ20N60B2D1 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXSA20N60B2D1

    IGBT PT 600V 35A TO-263AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSA20N60B2D1 Box 50
    • 1 -
    • 10 -
    • 100 $2.77
    • 1000 $2.77
    • 10000 $2.77
    		Buy Now

    IXYS Corporation IXSP20N60B2D1

    IGBT PT 600V 35A TO-220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSP20N60B2D1 Bulk 50
    • 1 -
    • 10 -
    • 100 $2.75
    • 1000 $2.75
    • 10000 $2.75
    		Buy Now

    IXYS Corporation IXSH20N60B2D1

    IGBT PT 600V 35A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH20N60B2D1 Bulk 30
    • 1 -
    • 10 -
    • 100 $3.30
    • 1000 $3.30
    • 10000 $3.30
    		Buy Now

    20N60B2D1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SP20N60B2D1

    Abstract: SP20N60 20N60B2
    Contextual Info: IXSP 20N60B2 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		20N60B2 20N60B2D1 IC110 8-06B 405B2 SP20N60B2D1 SP20N60 20N60B2 PDF

    Siemens DIODE E 1220

    Abstract: 30N60B2D1 30N60B ixst30n60b2d1
    Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		30N60B2D1 IC110 Siemens DIODE E 1220 30N60B2D1 30N60B ixst30n60b2d1 PDF