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IXYS Corporation


IXYS Corporation IXSQ20N60B2D1 IGBT PT 600V 35A TO-3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSQ20N60B2D1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSA20N60B2D1 IGBT PT 600V 35A TO-263AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSA20N60B2D1	Box			50	1 - 10 - 100 $2.77 1000 $2.77 10000 $2.77	Buy Now
IXYS Corporation IXSP20N60B2D1 IGBT PT 600V 35A TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSP20N60B2D1	Bulk			50	1 - 10 - 100 $2.75 1000 $2.75 10000 $2.75	Buy Now
IXYS Corporation IXSH20N60B2D1 IGBT PT 600V 35A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSH20N60B2D1	Bulk			30	1 - 10 - 100 $3.30 1000 $3.30 10000 $3.30	Buy Now

20N60B2D1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	20N60B2D1 IC110 8-06B 405B2	PDF
DSEP 15-06A Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072 Contextual Info: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	20N60B2D1 IC110 DSEP 15-06A 20N60B2D1 IXSH20N60B2D1 IC ti 072	PDF
Contextual Info: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	20N60B2D1 IC110 5-06A	PDF
20N60B2D1 Contextual Info: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	20N60B2D1 IC110 8-06B 405B2 20N60B2D1	PDF
SP20N60B2D1 Abstract: SP20N60 20N60B2 Contextual Info: IXSP 20N60B2 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	20N60B2 20N60B2D1 IC110 8-06B 405B2 SP20N60B2D1 SP20N60 20N60B2	PDF
Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 IC110	PDF
4013V Abstract: Siemens DIODE E 1220 30N60B2D1 Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
Siemens DIODE E 1220 Abstract: 30N60B2D1 30N60B ixst30n60b2d1 Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 IC110 Siemens DIODE E 1220 30N60B2D1 30N60B ixst30n60b2d1	PDF