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    20N120IHR Search Results

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    onsemi

    onsemi NGTB20N120IHRWG

    IGBT TRENCH FS 1200V 40A TO-247
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    20N120IHR Datasheets Context Search

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    20N120IHR

    Contextual Info: 20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		NGTB20N120IHRWG NGTB20N120IHR/D 20N120IHR PDF

    Contextual Info: 20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers


    Original     		NGTB20N120IHRWG NGTB20N120IHR/D PDF

    Contextual Info: 20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers


    Original     		NGTB20N120IHRWG NGTB20N120IHR/D PDF

    Contextual Info: 20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		NGTB20N120IHRWG NGTB20N120IHR/D PDF

    Contextual Info: 20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers


    Original     		NGTB20N120IHRWG NGTB20N120IHR/D PDF