20N12 Search Results

20N12 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TRS20N120HB		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, 2 in 1, TO-247	Datasheet

20N12 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N120E2		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1

20N12 Price and Stock

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Diodes Incorporated AP2120N-1.2TRG1 IC REG LINEAR 1.2V 150MA SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AP2120N-1.2TRG1	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
Avnet Americas	AP2120N-1.2TRG1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.04	Buy Now
Bristol Electronics	AP2120N-1.2TRG1		45			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	AP2120N-1.2TRG1			14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	AP2120N-1.2TRG1				3,000	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
onsemi NVH4L020N120SC1 SICFET N-CH 1200V 102A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVH4L020N120SC1	Tube	1,266		1	1 $46.71 10 $46.71 100 $35.39 1000 $35.39 10000 $35.39	Buy Now
Newark	NVH4L020N120SC1	Bulk	250		1	1 $62.90 10 $55.03 100 $55.03 1000 $55.03 10000 $55.03	Buy Now
TME	NVH4L020N120SC1				1	1 $83.94 10 $75.55 100 $66.82 1000 $56.00 10000 $56.00	Get Quote
Richardson RFPD	NVH4L020N120SC1				450	1 - 10 - 100 - 1000 $35.39 10000 $35.39	Buy Now
Avnet Silica	NVH4L020N120SC1			14 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip Stock	NVH4L020N120SC1		5,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	NVH4L020N120SC1		180	15 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	NVH4L020N120SC1		53		1	1 $8.00 10 $7.93 100 $7.93 1000 $7.93 10000 $7.93	Buy Now
onsemi NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	NVBG020N120SC1	Cut Tape	1,067		1	1 $48.83 10 $42.39 100 $42.39 1000 $42.39 10000 $42.39	Buy Now
	NVBG020N120SC1	Digi-Reel	1,067		1	1 $48.83 10 $42.39 100 $42.39 1000 $42.39 10000 $42.39	Buy Now
	NVBG020N120SC1	Reel	800		800	1 - 10 - 100 - 1000 $34.63 10000 $34.63	Buy Now
Avnet Americas	NVBG020N120SC1	Reel	800	14 Weeks	800	1 - 10 - 100 - 1000 $36.94 10000 $34.63	Buy Now
Newark	NVBG020N120SC1	Cut Tape	716		1	1 $68.62 10 $62.18 100 $61.20 1000 $60.59 10000 $60.59	Buy Now
Rochester Electronics	NVBG020N120SC1		3,917		1	1 - 10 - 100 $34.64 1000 $30.99 10000 $29.17	Buy Now
TME	NVBG020N120SC1				1	1 $82.19 10 $73.92 100 $64.61 1000 $50.06 10000 $50.06	Get Quote

Richardson RFPD	NVBG020N120SC1				800	1 - 10 - 100 - 1000 $34.63 10000 $34.63	Buy Now
Avnet Silica	NVBG020N120SC1			15 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVBG020N120SC1		1,600	16 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	NVBG020N120SC1		800		800	1 - 10 - 100 - 1000 $50.39 10000 $50.39	Buy Now
Wuhan P&S	NVBG020N120SC1		661		1	1 $96.59 10 $96.59 100 $61.65 1000 $46.74 10000 $46.74	Buy Now
IXYS Corporation IXYX120N120C3 IGBT 1200V 240A PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYX120N120C3	Tube	631		1	1 $39.13 10 $39.13 100 $26.33 1000 $26.33 10000 $26.33	Buy Now
onsemi NTH4L020N120SC1 SICFET N-CH 1200V 102A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTH4L020N120SC1	Tube	574		1	1 $31.96 10 $31.96 100 $24.01 1000 $23.95 10000 $23.95	Buy Now
Newark	NTH4L020N120SC1	Bulk	16		1	1 $25.43 10 $25.02 100 $23.97 1000 $23.95 10000 $23.95	Buy Now
Rochester Electronics	NTH4L020N120SC1		40		1	1 - 10 - 100 $23.95 1000 $21.43 10000 $20.17	Buy Now
TME	NTH4L020N120SC1				1	1 $40.51 10 $40.51 100 $40.51 1000 $40.51 10000 $40.51	Get Quote
Richardson RFPD	NTH4L020N120SC1				450	1 - 10 - 100 - 1000 $23.95 10000 $23.95	Buy Now

Avnet Asia	NTH4L020N120SC1		36	16 Weeks	450	1 - 10 - 100 - 1000 $6.86 10000 $6.86	Buy Now
Avnet Silica	NTH4L020N120SC1			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTH4L020N120SC1		120	18 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	NTH4L020N120SC1		4,200		450	1 - 10 - 100 - 1000 $32.91 10000 $32.91	Buy Now
Wuhan P&S	NTH4L020N120SC1		580		1	1 $66.80 10 $66.80 100 $42.64 1000 $32.33 10000 $32.33	Buy Now

Find more 20N12 price and stock on Findchips.com

20N12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IC IGBT 20N120 Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1 Contextual Info: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1	PDF
20n120 Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes	PDF
IC IGBT 20N120 Abstract: IXDH20N120AU1 ixdh20n120au 20N120 Contextual Info: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW	Original	20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au	PDF
Contextual Info: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	OCR Scan	MGW20N 120/D 20N120 MGW20N120/D	PDF
Contextual Info: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	20N120B O-268 O-247 728B1 123B1 065B1	PDF
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140	PDF
IXGH20N120BD1 Abstract: IXGH 20N120BD1 Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1	PDF
20N120D1 Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247 Contextual Info: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247	PDF
Contextual Info: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM	Original	20N120 20N120 O-268 O-247 O-268AA	PDF
MJ480 Contextual Info: IXDA 20N120AS High Voltage IGBT IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK	Original	20N120AS 20110118a MJ480	PDF
20N120 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	20N120 728B1 123B1 728B1 065B1 20N120	PDF
20N120BD1 Abstract: ixys dsep 8-12a Contextual Info: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	20N120B 20N120BD1 IC110 O-220 728B1 123B1 065B1 20N120BD1 ixys dsep 8-12a	PDF
20N120 Abstract: IC IGBT 20N120 Contextual Info: IXDH 20N120 AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability Square RBSOA VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V G E Preliminary Data Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ	Original	20N120 O-247 IXDH20N120AU1 D-68623 IC IGBT 20N120	PDF
Contextual Info: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings	Original	20N120B IC110 O-268 O-247 728B1	PDF

Contextual Info: IXDH 20N120 VCES = 1200 V IXDH 20N120 D1 IC25 = 38 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	20N120 20N120 O-247 IXDH20N120D1	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C	Original	20N120 OT-227 E153432 728B1 123B1 728B1 065B1	PDF
Contextual Info: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous	Original	20N120 247TM	PDF
Contextual Info: IXDA 20N120AS IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK	Original	20N120AS O-263 20110118a	PDF
Contextual Info: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings	Original	20N120B O-268 IC110 728B1 123B1 728B1 065B1 20N120B	PDF
Contextual Info: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G G E E IXDH 20N120 Preliminary Data IXDH 20N120 D1 Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	20N120 20N120 O-247 IXDH20N120D1 D-68623	PDF
IC IGBT 20N120 Abstract: 20N120 Contextual Info: IGBT IXGA 20N120 VCES IXGP 20N120 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C	Original	20N120 O-220AB O-263 728B1 IC IGBT 20N120	PDF
Contextual Info: □IXYS High Voltage IGBT with optional Diode IXDH 20N120 IXDH 20N120 D1 V CES ^C25 vCE sat typ 1200 V 38 A 2.4 V Short Circuit SOA Capability Square RBSOA IXDH 20N120 Preliminary Data Symbol Conditions IXDH 20N120 D1 Maximum Ratings VCES Tj = 25°C to 150°C	OCR Scan	20N120 20N120	PDF
TO-247 weight Abstract: 20N120 20N120 IGBT Contextual Info: IGBT IXGH 20N120 VCES IXGT 20N120 IC25 VCE sat tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	20N120 O-247 O-268 O-268 728B1 TO-247 weight 20N120 IGBT	PDF
IXDH20N120D1 Abstract: IXDH20N120 20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter Contextual Info: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	20N120 20N120 O-247 IXDH20N120D1 IXDH20N120D1 IXDH20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter	PDF

20N12 Search Results

20N12 Result Highlights (1)

20N12 Datasheets (1)

20N12 Price and Stock

Diodes Incorporated AP2120N-1.2TRG1

onsemi NVH4L020N120SC1

onsemi NVBG020N120SC1

IXYS Corporation IXYX120N120C3

onsemi NTH4L020N120SC1

20N12 Datasheets Context Search

IC IGBT 20N120

20n120

IC IGBT 20N120

IXGH20N120BD1

20N120D1

MJ480

20N120

20N120BD1

20N120

IC IGBT 20N120

TO-247 weight

IXDH20N120D1