20N1 Search Results

20N1 Result Highlights (3)

Part	Manufacturer	Description	Download
GT20N135SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1350 V, 40 A, Built-in Diodes, TO-247	Datasheet
TRS20N120HB	Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, 2 in 1, TO-247	Datasheet
PTMA401120N1AD	Texas Instruments	1-OUTPUT 10W DC-DC REG PWR SUPPLY MODULE, ROHS COMPLIANT, DIP-5

20N1 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
20N100	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	133.07KB	1
20N100D2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
20N100E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
20N120E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
JMTG320N10A	Jiangsu JieJie Microelectronics Co Ltd	N-channel enhancement mode power MOSFET with 100V drain-source voltage, 28A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V in a PDFN5x6-8L package.	Original	PDF
JMTQ320N10A	Jiangsu JieJie Microelectronics Co Ltd	100V, 23A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 32mΩ at VGS=10V, available in PDFN3x3-8L package, designed for load switching, PWM, and power management applications.	Original	PDF
SLP120N10G	Maplesemi	N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, 4.9mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested.	Original	PDF
SLD20N15T	Maplesemi	N-channel 150V, 20A Power MOSFET with typical RDS(on) of 70 mΩ at VGS = 10 V, utilizing trench technology for low on-resistance and high switching performance in DC/DC and AC/DC converters.	Original	PDF
SLB120N10G	Maplesemi	N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, typical RDS(on) of 4.6mΩ at VGS = 10V, low input capacitance, and fast switching characteristics suitable for high-efficiency power management applications.	Original	PDF
CJAC20N10	JCET Group	CJAC20N10 N-Channel Power MOSFET with 100V drain-source voltage, 20A continuous drain current, ultra low RDS(on), high energy avalanche capability, and fast recovery drain-to-source diode for high voltage switching applications.	Original	PDF
JMTC320N10A	Jiangsu JieJie Microelectronics Co Ltd	N-channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 32mΩ at VGS=10V in TO-220C package.	Original	PDF
IRC3020N13-B20	CT Micro International Corporation	SMD type 940nm infrared emitter with GaAlAs LED, peak wavelength at 940nm, radiant intensity of 1.8 mW/sr at 20mA, viewing angle ±60 degrees, and RoHS compliant.	Original	PDF
NCEAP020N10LL	NCEPOWER	NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature.	Original	PDF

HSU20N15	Huashuo Semiconductor	N-channel 150V MOSFET with 20A continuous drain current, 88mΩ typical RDS(on) at VGS=10V, TO252 package, suitable for high-density switching applications.	Original	PDF
HSU20N15A	Huashuo Semiconductor	N-Ch 150V Fast Switching MOSFET with 23A continuous drain current, 47mΩ typical RDS(ON), 150V breakdown voltage, low gate charge, and advanced trench technology for high-efficiency synchronous buck converters.	Original	PDF
JMTK320N10A	Jiangsu JieJie Microelectronics Co Ltd	N-channel Enhancement Mode Power MOSFET JMTK320N10A with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V, available in TO-252-3L package.	Original	PDF
HSBA20N15S	Huashuo Semiconductor	N-channel 150V fast switching MOSFET with 23A continuous drain current, 56mΩ max RDS(ON) at 10V VGS, low gate charge, and high cell density trench technology for synchronous buck converters.	Original	PDF
JMTI320N10A	Jiangsu JieJie Microelectronics Co Ltd	N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low on-resistance of 32mΩ at VGS=10V, available in TO-251-4R package.	Original	PDF
SL20N10	SLKOR		Original	PDF

20N1 Price and Stock

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Infineon Technologies AG IPB120N10S405ATMA1 MOSFET N-CH 100V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB120N10S405ATMA1	Reel	10,000		1,000	1 - 10 - 100 - 1000 $1.32 10000 $1.32	Buy Now
Newark	IPB120N10S405ATMA1	Cut Tape	32,291		1	1 $3.58 10 $2.97 100 $2.35 1000 $1.88 10000 $1.88	Buy Now
Rochester Electronics	IPB120N10S405ATMA1		1,983		1	1 - 10 - 100 $1.33 1000 $1.19 10000 $1.12	Buy Now
EBV Elektronik	IPB120N10S405ATMA1			10 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi NVH4L020N120SC1 SICFET N-CH 1200V 102A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVH4L020N120SC1	Tube	1,266		1	1 $42.23 10 $42.23 100 $35.39 1000 $35.39 10000 $35.39	Buy Now
Newark	NVH4L020N120SC1	Bulk	250		1	1 $62.66 10 $54.48 100 $54.48 1000 $54.48 10000 $54.48	Buy Now
Richardson RFPD	NVH4L020N120SC1				450	1 - 10 - 100 - 1000 $35.39 10000 $35.39	Buy Now
Avnet Silica	NVH4L020N120SC1			14 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	NVH4L020N120SC1		5,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	NVH4L020N120SC1		180	15 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Cal-Chip Electronics CHV2220N1K0103KXT HVCAP2220 X7R .01UF 10% 1KV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	CHV2220N1K0103KXT	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.03 10000 $1.90	Buy Now
	CHV2220N1K0103KXT	Digi-Reel	1,000		1	1 $4.17 10 $2.98 100 $2.35 1000 $2.14 10000 $2.14	Buy Now
	CHV2220N1K0103KXT	Cut Tape	1,000		1	1 $4.17 10 $2.98 100 $2.35 1000 $2.14 10000 $2.14	Buy Now
Cal-Chip Electronics CHV2220N1K0473KXT HVCAP2220 X7R .047UF 10% 1KV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	CHV2220N1K0473KXT	Cut Tape	1,000		1	1 $2.70 10 $1.86 100 $1.43 1000 $1.26 10000 $1.26	Buy Now
	CHV2220N1K0473KXT	Digi-Reel	1,000		1	1 $2.70 10 $1.86 100 $1.43 1000 $1.26 10000 $1.26	Buy Now
	CHV2220N1K0473KXT	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.20 10000 $1.10	Buy Now
Microchip Technology Inc ATSAMC20N17A-ANT IC MCU 32BIT 128KB FLASH 100TQFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	ATSAMC20N17A-ANT	Digi-Reel	998		1	1 $4.65 10 $4.65 100 $3.86 1000 $3.86 10000 $3.86	Buy Now
	ATSAMC20N17A-ANT	Cut Tape	998		1	1 $4.65 10 $4.65 100 $3.86 1000 $3.86 10000 $3.86	Buy Now
Microchip Technology Inc	ATSAMC20N17A-ANT	Reel	6,000	6 Weeks		1 $4.65 10 $4.65 100 $3.86 1000 $3.56 10000 $3.38	Buy Now
Avnet Silica	ATSAMC20N17A-ANT			6 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	ATSAMC20N17A-ANT			5 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	ATSAMC20N17A-ANT					1 - 10 - 100 - 1000 $3.67 10000 $3.67	Buy Now

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20N1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IC IGBT 20N120 Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1 Contextual Info: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1	PDF
Contextual Info: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient	Original	20N100 O-247 O-268	PDF
20N100 Contextual Info: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF
20n120 Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes	PDF
IC IGBT 20N120 Abstract: IXDH20N120AU1 ixdh20n120au 20N120 Contextual Info: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW	Original	20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au	PDF
Contextual Info: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	OCR Scan	MGW20N 120/D 20N120 MGW20N120/D	PDF
MDD25 Abstract: 255-16N1 MDD255 ixys MCC 700 Contextual Info: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol	Original	2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient 20100203a MDD25 255-16N1 MDD255 ixys MCC 700	PDF
T1125 Contextual Info: MDO 500 IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol 3 2 2 MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 Test Conditions	Original	500-12N1 500-14N1 500-16N1 500-18N1 500-20N1 500-22N1 T1125	PDF
2x520 Contextual Info: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions	Original	312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 2x520	PDF
20N15 Contextual Info: Capacitive proximity sensors CFDM 20N1500/S35L Capacitive proximity sensors dimension drawing 20 35 9 3,5 22 10 12 4xLED M8 x 1 6 13 8,9 general data photo mounting type shielded nominal sensing distance Sn 5 mm temperature drift ± 15 % +10 . +70 °C	Original	20N1500/S35L 20N15	PDF
Contextual Info: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Contextual Info: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Contextual Info: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Contextual Info: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF

Contextual Info: Capacitive Sensors CFBM 20N1600 Capacitive Sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C	Original	20N1600	PDF
Contextual Info: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	20N120B O-268 O-247 728B1 123B1 065B1	PDF
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140	PDF
IXGH20N120BD1 Abstract: IXGH 20N120BD1 Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1	PDF
Contextual Info: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol	Original	310-08N1 310-12N1 310-14N1 310-16N1 310-20N1 310-22N1	PDF
Contextual Info: Inductive sensors IFFM 20N17A3/S35L Inductive proximity switch dimension drawing 10 LED 32 7 7 19 3,5 10 20 M8 x 1 13 general data photo mounting type flush nominal sensing distance Sn 8 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data	Original	20N17A3/S35L housi500Â	PDF
20N120D1 Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247 Contextual Info: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247	PDF
Contextual Info: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;	Original	255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 200-2200V E72873 20121206e	PDF
Contextual Info: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM	Original	20N120 20N120 O-268 O-247 O-268AA	PDF
Contextual Info: IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat IGBT = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF

20N1 Search Results

20N1 Result Highlights (3)

20N1 Datasheets (20)

20N1 Price and Stock

Infineon Technologies AG IPB120N10S405ATMA1

onsemi NVH4L020N120SC1

Cal-Chip Electronics CHV2220N1K0103KXT

Cal-Chip Electronics CHV2220N1K0473KXT

Microchip Technology Inc ATSAMC20N17A-ANT

20N1 Datasheets Context Search

IC IGBT 20N120

20N100

20n120

IC IGBT 20N120

MDD25

T1125

2x520

20N15

IXGH20N120BD1

20N120D1