20AUG03 Search Results

Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DI ST REVISIONS 50 LTR DATE DWN APVD 20AUG03 JR MS DESCRIPTION REV PER 0G 61- 0 0 3 5 - 0 3 D D STAMPED C C SIGHT HOLE +.025 +.030

DD111

Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DI ST REVISIONS 50 LTR DESCRIPTION REV PER 0G 61- 0 0 3 5 - 0 3 DATE DWN APVD 20AUG03 JR MS D D 111 111 L .260 DIA. MAX <3 DIMPLES

Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DI ST REVISIONS 50 LTR DESCRIPTION REV PER 0G 61- 0 0 3 5 - 0 3 DATE DWN APVD 20AUG03 JR MS D D +.005 C C B B ACTIVE 10141-03 STANDARD

Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DI ST REVISIONS 50 LTR DESCRIPTION REV PER 0G 61- 0 0 3 5 - 0 3 DATE DWN APVD 20AUG03 JR MS D D C C B B ACTIVE 3 0 3 8 1 - 0 9 -9 0

Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DI ST REVISIONS 50 LTR B DESCRIPTION DATE REV PER 0G 3A— 0 0 3 5 — 0 3 20AUG03 DWN APVD JR MS D D C C B B ACTIVE 8 1 4 1 -0 9 -4 5

Si7971DP

Abstract: 117-a 117a
Contextual Info: SPICE Device Model Si7971DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

LM12864LDC-1

Abstract: CDM63 LM12864L
Contextual Info: 93,0 Note: *1, A V R 2 5 k t o 50k m ust be c o n n e c t e d e x t e r n a ly f o r C o n t r a s t C o n tro l, □ t h e r w is e , e x t e r n a l LCD c o n t r a s t r e f e r e n c e s h o u ld be giv en t o VO, *2, LCD D is p la y T y p e : S T N - G r a y , P o s it iv e , T r a n s f l e c t i v e

SUM70N04-07L

Abstract: SUM70N04-07L SPICE Device Model
Contextual Info: SPICE Device Model SUM70N04-07L Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

T85 microSwitch

Abstract: t85 5e4 ANM2025 BZ-RW842214-P4 t85.5E4 16A250V
Contextual Info: CATALOG MICRO SWITCH a Honeywell Division F E D . MFD . CODE BZ-RW842214-P4 SWITCH-BASIC ANM2025 9 1929 .3801.030 LI5TING 0 .3 7 X .15 WIDE SINTERED STAINLESS STEEL ROLLER ^r û_ i .094 MAX PRETRAVEL OJ OJ 00 £ u^ ° tr i ^ M ^ L j—I 0Û o < .790*020 CL

Rondo

Contextual Info: 3 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 J9 REVISIONS ALL RIGHTS RESERVED. AA DESCRIPTION A 3 „ 53 _ REVISED DIMENSIONS [ . 3 7 5 ] PER ARE EC 0515-0123-03 NAXINNM 1APR03 UNLESS DWN APVD DD EL OTHERWISE

1S29

Abstract: YZ-RX58-D5
Contextual Info: CATALO G M ICRO SWITCH FREEPORT I L L I N O I S . U. S A A DIVISION OF S W IT C H -B A S IC HONEYWELL FED . M FG. CODE L IS T IN G Y Z -R X 5 8 - D 5 0I92B |—.9 l7 ± .O IO -*“j ID Û I 00 m .140- oof DIA H0LE A . X or i N > - CO R E V IS IO N S A NORMALLY OPEN TE R M IN A L

Contextual Info: T !?5 E 5 5 T ¡S ?¡S r MI CR O SWITCH A DIY1SJQI OF m KlfOtfrMKnm i U6DUÎ0I COUPANT RIETOIT, IIUNOK Y Z -R S X 35 I SWITCH — BASIC If f I I— " I F E D . M F G . C O D E 0 1029 HARDENED STEEL PLUNGER io PO . 1-40 iroof ° ' A holeA c o fe I L±J 1 .1 1 0 ± . 0 2 0