20A10 Search Results

20A40

Abstract: 20A100C 20A60C
Contextual Info: 20A10C-20A100C Plastic Silicon Rectifiers VOLTAGE RANGE: 100 - 1000 V CURRENT: 20 A TO-220AB Features 2.8± 0.1 Low cost Diffused junction 4.5± 0.2 10.2± 0.2 1.4± 0.2 19.0± 0.5 1 8.9± 0.2 ? 3.8± 0.15 Low leakage Low forward voltage drop High current capability

Contextual Info: SBD T y p e : GCH20 CH20A 20A10 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage

FCH20A10

Contextual Info: SBD T y p e : FCH20 FCH20A 20A10 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol Repetitive Peak Reverse Voltage

Contextual Info: SBD T y p e : GCH20 CH20A 20A10 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage

FWC-32A10F

Abstract: FWC-20A10F 30A10 fwc Fuses FWC-16A10F FWC-30A10F FWC-8A10F FWC-10A10F FWC-12A10F FWC-25A10F
Contextual Info: BIF Document Semiconductor Fuse 6-32A, 600 Volts 35785306 Size 10≈ 38 104 6 4 2 103 FWC-6A10F FWC-8A10F FWC-10A10F FWC-12A10F FWC-16A10F FWC-20A10F FWC-25A10F FWC-30A10F & FWC-32A10F 6 4 2 102 Virtual Pre-Arcing Time In Seconds 6 4 2 101 6 4 2 100 6 4 2

20A10

Abstract: GCH20A10
Contextual Info: SBD T y p e : GCH20 CH20A 20A10 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage

FCH20A10

Abstract: 20A10
Contextual Info: SBD T y p e : FCH20 FCH20A 20A10 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol Repetitive Peak Reverse Voltage

FCH20A10

Contextual Info: SBD T y p e : FCH20 FCH20A 20A10 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol Repetitive Peak Reverse Voltage

30A10

Abstract: FWA-20A10F FWA-25A10F
Contextual Info: BIF Document Semiconductor Fuse 5-30A, 150 Volts 35785317 Size 10≈ 38 104 6 4 2 103 6 4 2 102 Virtual Pre-Arcing Time In Seconds 6 4 2 101 FWA-5A10F FWA-10A10F FWA-15A10F FWA-20A10F FWA-25A10F FWA-30A10F 6 4 2 100 6 4 2 10–1 6 4 2 10–2 6 4 2 10–3 6

0 280 130 122

Abstract: 32A48 32-B22 40A21 32-A48 stegmann+AG+110 GMPM2-B112RCBSXU.110
Contextual Info: Insert Rotations Alternate Positions Alternate Positions of Insert Arrangements KEY STATIONARY - INSERT ROTATED Front View of Pin Insert INSERT DEGREES FOR ALTERNATE POSITIONS TYPE W X Y Z 14S-2 14S-5 14S-6 14S-7 14S-9 16S-1 16S-4 16S-5 Insert Rotations Alternate Positions

2n1620

Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E

8202102YX

Abstract: 8202102 TS68000MR ts68000mcb smd marking a60 TS68000MC ASUS AIA23 ts68000mrb D152J
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Add V parameters. 1 .3 : APPROVED 1984 MAR 2 A Table I : 1.75 mW. Change Pn from 1.5 mW to u B Revise ta b le I lim it s , add 10 MHz device, revise operating temperature range, and re vise waveforms. 1985 DEC 16

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

20a100ct

Abstract: SBR20A100CT SBR20A100CTFP
Contextual Info: 20A100CT 20A100CTFP 20A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • • • • • • • • Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Lead Free Finish, RoHS Compliant Note 2

Ballast

Abstract: 7h4b D5TF30 TJ601K01 3TFV4 amperite tj601k01 36-11 AMPERITE BALLAST amperite 13-4 6H6 tube 6A10 Ballast tube
Contextual Info: Solving your relay requirements since 1922 Amperite Co. 567 52nd Street P.O. Box 329 West New York, NJ 07093 800 752-2329 www.Amperite.com AUTOMATIC CURRENT REGULATOR INTRODUCTION The Amperite automatic current regulator is a reliable current regulating device, which

Contextual Info: AON6936 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant VDS

Contextual Info: 20A100CTE 20A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • • • • • • • • Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Lead Free Finish, RoHS Compliant Note 1

1N3860

Abstract: 1N3861 12A-10F
Contextual Info: HIGH SPEED SWITCHING TYPES STUD BASE RECTIFIERS l0 RATINGS TO 30.0 AMPERES FEATURES: DESCRIPTION • Hermetic Seal • Metallurgical^ Bonded • High Temperature Operation These hermetically sealed rectifiers can be used in switching power supply and regulators. High speed and the availability of high voltage

Contextual Info: Conductive Polymer Aluminum Electrolytic Capacitors TECHNICAL GUIDE 2013.7 industrial.panasonic.com/ww/ Conductive Polymer Aluminum Electrolytic Capacitors SP-Cap TECHNICAL GUIDE Contents １．Features ・・・・・・・・・・1 2．Special Capabilities

2SD45

Abstract: SOT1156 2sc768 2N1210-1 2N1619 2N1620 SDT1152 MHT6311 MHT6312 MHT6313
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

rtk 031

Abstract: FIN-01510 5021B 59V002 20C106 FAKRA f4 smd coding 23F-106 23G-102 D-82024
Contextual Info: Automotive Connectors FAKRA-RF Connectors SERIES 1.0/2.3 Automotive Connectors Rosenberger Hochfrequenztechnik was found in 1958 and ranks among the leading manufacturers of high-frequency coaxial connectors worldwide today. In addition, a comprehensive program of

AOD472A

Abstract: AOD472AL AOD472 20A10
Contextual Info: AOD472A TM N-Channel SDMOS POWER Transistor General Description Features VDS V = 25V ID = 55A RDS(ON) < 5.5mΩ RDS(ON) < 9.5mΩ TM The AOD472A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled