2087 Search Results

Contextual Info: 2SJ225 2087 i L D L o w D riv e S e r ie s V D5S= 3 0 V P Channel Power M OSFET E 38 10 F e a tu re s •Small ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Meets radial taping. A bsolute M axim um R atings a tT a = 25°C Drain to Source Voltage

SNVS629

Abstract: lm5050-1
Contextual Info: User's Guide SNVA458A – April 2011 – Revised May 2013 AN-2087 LM5050-1EVAL Evaluation Board 1 Introduction The LM5050-1 evaluation board is designed to demonstrate the capabilities of the LM5050-1 OR-ing Diode Controller. One high side N-channel power MOSFET is used. The LM5050-1 evaluation board

Contextual Info: IgT Integrated Telecom Technology, Inc. E3 Framer EAC-030-A User’s Manual Copyright 1994 -1 9 9 7 Integrated Telecom Technology, Inc. All Rights Reserved Integrated Telecom Technology, Inc. 18310 Montgomery Village Avenue, Suite 300 Gaithersburg, MD 20879 USA

FPT-44P-M08

Abstract: MBM30LV0064 BGA-52P-M01
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

Contextual Info: Bulletin PD-20873 10/04 STPS20L15DPbF SCHOTTKY RECTIFIER 20 Amps IF AV = 20Amp VR = 15V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 20 A VRRM 15 V IFSM @ tp = 5 µs sine 700 A VF 0.25 V - 55 to 125

STPS40L1

Contextual Info: Bulletin PD-20874 10/04 STPS40L15CTPbF SCHOTTKY RECTIFIER 2 x 20 Amps IF AV = 40Amp VR = 15V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 40 A VRRM 15 V IFSM @ tp = 5 µs sine 700 A VF 0.25 V - 55 to 125

Contextual Info: Bulletin PD-20870 10/04 STPS30L30CTPbF SCHOTTKY RECTIFIER 30 Amp IF AV = 30Amp VR = 30V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The

Contextual Info: Bulletin PD-20879 11/04 30EPH06PbF Hyperfast Rectifier Features • • • • • • trr = 28ns typ. IF AV = 30Amp VR = 600V Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Single Diode Device

2SJ231

Abstract: EN3816
Contextual Info: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: THALES MICROSONICS EW SO 1659 VCO - Voltage Controlled Oscillator 3G Specification Electrical specifications at 25°C, VCC = 8 V, unless otherwise specified Minimum Typical Maximum Notes MHz 2087.5 2192.5 5 Operating full spec °C +75 3-4 Functional °C

FPT-48P-M19

Abstract: FPT-48P-M20 mbm29f160be-70-90 20/MBM29F160TE/BE
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (1) package. The device is designed to be

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

Contextual Info: Ordering num ber : ENN6970~j N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. u n it : mm • Ullrahigh-speed switching. 2087A • 4V drive. [2SK3495] • Meets radial taping. 2.5 1. 4 5 ,

Contextual Info: Sign In Search By: lkji Part Number m n lkj Text m n Go Enter a complete or partial part number. Products Documentation Resources My Account Customer Support Home > Products > By Type > Miscellaneous Military & Aerospace Products Product Details for 208788

AD-2087

Abstract: 7692
Contextual Info: ADSL LINE TRANSFORMER P/N: AD-2087 DATA SHEET BOTHHAND USA Bothhand USA. e-mail: sales@bothhandusa.com http://www.bothhand.com Feature ! ! ! Recommended use with their ADSL Chipset. Operating Temperature.: -10℃ to+60℃. Storage Temperature.: -25℃ ℃ to +75℃

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

800TD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

FASTRACK

Abstract: 20-PIN MAX3873 MAX3873EGP VCC511
Contextual Info: 19-2087; Rev 1; 3/02 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873 is implemented in Maxim’s second-generation SiGe process and consumes only 260mW at 3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN

Contextual Info: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Subminiature and Microminiature D Connectors Subminiature D Pin/Socket Connectors for MIL-C-24308 and MILC-39029 AMP 1-208778-2 Active Active

Contextual Info: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Subminiature and Microminiature D Connectors Subminiature D Pin/Socket Connectors for MIL-C-24308 and MILC-39029 AMP 1-208778-1 Active Active

EN3820

Abstract: 2SK1725 AN 7832 KT
Contextual Info: Ordering number:EN3820 N-Channel Silicon MOSFET 2SK1725 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1725] 2.5 1.45 1.0

2SK1730

Contextual Info: Ordering number:EN3825 N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1730] 2.5 1.45 1.0