2085 Search Results

Contextual Info: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C

E36J

Contextual Info: 2SK1731 LD L o w D rive S eries VDss = 30V 2085 N Channel Power M OSFET E'36J6 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Its height onboard is 9.5mm. - M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

Contextual Info: 2SJ232 LD L o w D rive S eries V DSs = 1 0 0 V 2085 P Channel Power M O SFET £.1381 7 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Its height onboard is 9.5mm. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

Contextual Info: 2SJ230 2085 LD L o w D rive S eries V Dss = 6 0 V P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. tisolute M ax im u m R a tin g s a t Ta = 25°C

c 8550

Abstract: HFCN-2100
Contextual Info: Ceramic High Pass Filter HFCN-2100 Typical Performance Data INSERTION LOSS dB FREQ. (MHz) 1 50 100 700 990 1050 1145 1200 1290 1475 1530 1670 1770 1880 2005 2085 2100 2150 2200 2365 2400 2450 2500 3000 3500 4000 5000 5100 5200 5500 6000 7000 7500 8000 9000

Contextual Info: Voltage Controlled Oscillator Typical Performance Data ROS-2085-119+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 3.90 4.25 4.50 4.75 5.00 5.25 5.50 5.75 6.00 6.25

HFCN-2100D

Contextual Info: Ceramic High Pass Filter HFCN-2100D+ Typical Performance Data INSERTION LOSS dB FREQ. (MHz) 1 50 100 700 990 1050 1145 1200 1290 1475 1530 1670 1770 1880 2005 2085 2100 2150 2200 2365 2400 2450 2500 3000 3500 4000 5000 5100 5200 5500 6000 7000 7500 8000

HJK-19MH

Abstract: 18751
Contextual Info: Frequency Mixer HJK-19MH+ Typical Performance Data RF IN (MHz) 1350.1 1385.1 1420.1 1455.1 1490.1 1525.1 1560.1 1595.1 1630.1 1665.1 1700.1 1735.1 1770.1 1805.1 1840.1 1875.1 1910.1 1945.1 1980.1 2015.1 2050.1 2085.1 2120.1 2155.1 2190.1 2225.1 2265.1 2300.1

61CTQ045

Abstract: PD-20858 C4021
Contextual Info: Bulletin PD-20858 10/04 61CTQ045PbF 60 Amp SCHOTTKY RECTIFIER IF AV = 60Amp VR = 45V Description/ Features Major Ratings and Characteristics Characteristics This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier

Contextual Info: Bulletin PD-20853 rev. A 05/06 43CTQ100PbF 40 Amp SCHOTTKY RECTIFIER IF AV = 40Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 40 A VRRM 100 V waveform IFSM @ tp = 5 s sine 850 A VF @ 20 Apk, TJ = 125°C

Contextual Info: Bulletin PD-20858 10/04 61CTQ045PbF 60 Amp SCHOTTKY RECTIFIER IF AV = 60Amp VR = 45V Description/ Features Major Ratings and Characteristics Characteristics This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier

Contextual Info: Bulletin PD-20852 rev. A 05/06 42CTQ030PbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular waveform 40 A VRRM 30 V IFSM @ tp = 5 s sine 1100 A VF 0.38

Contextual Info: Bulletin PD-20855 rev. A 05/06 48CTQ060PbF 40 Amp SCHOTTKY RECTIFIER IF AV = 40Amp VR = 60V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 40 A VRRM 60 V IFSM @ tp = 5 s sine 1000 A VF 0.58 V waveform

VCUT07B1-HD1

Abstract: VCUT07B1
Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code

ccd board Circuit Schematic Diagram Electronic

Abstract: KAF-4320 KAF-4314 4320-E
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.1 MTD/PS-0677 May 14, 2010 KODAK KAF-4320 IMAGE SENSOR 2084 H X 2085 (V) FULL FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

29F400TC

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20851-4E FLASH MEMORY B lB 4M 512K X 8/256K x 16 BIT MBM29F400TC-55/-70/-90/MBM29F400BC-55/-70A90

4-1601009-4

Abstract: 3-14 AWG wire 1601000-1 EA20081013T EA20090930T
Contextual Info: 501-723 Qualification Test Report 15Dec09 Rev A Standard Range SIAMEZE* Insulation Displacement Terminals 1. INTRODUCTION 1.1. Purpose Testing was performed on Standard Range SIAMEZE* Insulation Displacement Terminals to determine their conformance to the requirements of Product Specification 108-2085, Revision A.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20858-4E FLASH MEMORY CMOS 8M 1M x 8 BIT M B M29LV008TA-70/-90/-12/M BM29LV008B A-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: VESD05A1B-HD1 www.vishay.com Vishay Semiconductors ESD-Protection Diode in LLP1006-2L FEATURES • Ultra compact LLP1006-2L package • Low package height < 0.4 mm 1 2 • 1-line ESD-protection • Low leakage current < 0.1 A 20856 • Low load capacitance CD = 12 pF

ccd board Circuit Schematic Diagram Electronic

Abstract: 22 pin ccd ccd diode datasheet CCD linear array ccd sensor 22 pin diagram ccd sensor driver KAF-4320 transistor equivalent book FOR D 1047
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 2.0 MTD/PS-0677 April 03, 2008 KODAK KAF-4320 IMAGE SENSOR 2084 H X 2085 (V) FULL FRAME CCD IMAGE SENSOR CONTENTS Summary Specification . 4

Contextual Info: Ordering number : ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features • • • • Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. unit : mm 2085A [2SJ608]

LLP1006-2L

Abstract: VESD05A1A-HD1
Contextual Info: VESD05A1A-HD1 Vishay Semiconductors ESD-Protection Diode in LLP1006-2L FEATURES • Ultra compact LLP1006-2L package • Low package height < 0.4 mm • 1-line ESD-protection 1 2 • Low leakage current < 1 A 20856 • Low load capacitance CD = 76 pF VR = 2.5 V; f = 1 MHz

VBUS05L1-DD1-G-08

Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking

Contextual Info: VESD03A1B-HD1 Vishay Semiconductors ESD-Protection Diode in LLP1006-2L FEATURES • Ultra compact LLP1006-2L package • Low package height < 0.4 mm • 1-line ESD-protection 1 2 • Low leakage current < 0.5 A 20856 • Low load capacitance CD = 15 pF VR = 2.5 V; f = 1 MHz