208 Search Results

TLR208

Abstract: TLG208 TLY208
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A D Ì F | ‘ì0 T ? a5 0 □ 0 1 7 1 0 1 0 | ~ 9 9D < D IS C R E T E /O P T O 17101 D -p ^ tó t TLR 208-5, TLG 208-5, 208-5 GaP RED, GaP GREEN, GaAsP YELLOW e u n iK FEATURES: , All Piasele Hold Type « Bar Point Size

AK marking

Abstract: marking AK TYCO electronics marking code date
Contextual Info: 8 T H IS DRAWING IS U N P U B LIS H E D . 7 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. COPYRIGHT - BY TYCO ELECTRONIC5 CORPORATION. 0.51 D A REF 5.28 [,208]MAX SS 7 7 + 1.02±0.08 B RECOMMENDED PC BOARD PAD PATTERN 0.20 [.008] THICK STENCIL A AMP 4605 REV 31MAR2000

MUSB-B151-34

Abstract: MUSBB15134 amphenol usb connectors usb mini dwg P-MUSB-B151-XX
Contextual Info: A B C D E G F H REVISIONS 5.00 [.197] DEEP THREADED HOLES SEE ORDERING CODE THREAD OPTION 5.28 .208 2.50 .098 1 5.58 [.220] WITH REAR SHIELD OPTION DESCRIPTION, ECN, EAR NO. DATE APP'D H REV PER EAR 13750 JUL20/11 K.L. 1 ORDERING CODE: M U S B - B 1 5 1 - X X

Contextual Info: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as

Contextual Info: SP206/207/208/211 +5V RS-232 Serial Transceivers FEATURES T3 OUT 1 24 T4 OUT T1OUT 2 23 R2IN T2OUT 3 22 R2OUT R1IN 4 21 SD R1OUT 5 20 EN T2IN 6 19 T4IN T1IN 7 18 T3IN GND 8 17 R3OUT VCC 9 16 R3IN C1+ 10 15 V– V+ 11 14 C 2– C 1– 12 13 C 2+ SP206 • 0.1 F External Charge Pump Capacitors

Contextual Info: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply

IC 2732 pdf datasheet

Abstract: ZP-11ALH
Contextual Info: Frequency Mixer ZP-11ALH+ Typical Performance Data RF IN (MHz) 800.1 880.6 961.1 1041.6 1122.1 1202.6 1283.1 1363.6 1444.1 1524.6 1605.1 1685.6 1766.1 1846.6 1927.1 2007.6 2088.2 2168.7 2249.2 2329.7 2410.2 2490.7 2571.2 2651.7 2732.2 2812.7 2893.2 2973.7

IC 2732 pdf datasheet

Abstract: ZP-11ALH ip 4056
Contextual Info: Frequency Mixer ZP-11ALH Typical Performance Data RF IN (MHz) 800.1 880.6 961.1 1041.6 1122.1 1202.6 1283.1 1363.6 1444.1 1524.6 1605.1 1685.6 1766.1 1846.6 1927.1 2007.6 2088.2 2168.7 2249.2 2329.7 2410.2 2490.7 2571.2 2651.7 2732.2 2812.7 2893.2 2973.7

mini USB B

Contextual Info: A B C D E G F H REVISIONS 5.00 [.197] DEEP THREADED HOLES SEE ORDERING CODE THREAD OPTION 2.50 .098 1 5.28 .208 REV DESCRIPTION, ECN, EAR NO. DATE APP'D E REV PER EAR 13750 MAR21/11 K.L. 1 ORDERING CODE: M U S B - E 1 5 1 - X X 10.00 .394 2 5.58 [.220] WITH REAR

LL4150

Contextual Info: LL4150 SURFACE MOUNT FAST SWITCHING DIODE Features • · · · Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductance C B A Mechanical Data · · · · · Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202, Method 208

2056

Abstract: 2103 datasheet AN-100 V640ME01 VCOs
Contextual Info: V640ME01 9939 Via Pasar • San Diego, CA 92126 TEL 619 621-2700 FAX (619) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 2079 - 2081 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-14S - Style Package

Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D I 7 c3ti 7 Ü 7 L j 000B 7SS ^ P 4 5 - Z S - i,3 LC74HC393 V - -1^ : ' -7V CMOS High-Speed Standard Logic LC74HC Senes 3003A Dual 4-Stage Binary Ripple Counter *2082A Features The LC74HC393 consists of 2 identical 4-bit binary ripple counters. Counting is sgcpmplished synchronously with

wickmann 275

Abstract: Wickmann USA wickmann 800
Contextual Info: MINIATURE FUSES WICKMANN " ing t ¼ c 1 A " x ast¼ry F Series 231 10 Special Type 0 ,0 00 250/500 Volt Tim e -c urren t characteristic s M in -M ax Limits Ve 10 • FaxBack Document # 208 ,0 0 • Ceramic tube 1 ,0 Brass caps, nickel-plated 00 • Packaging:

1N4151

Abstract: LL4151
Contextual Info: 1N4151 FAST SWITCHING DIODE Features • · · · Fast Switching High Reliability High Conductance Surface Mount Version Available LL4151 B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number

SFH 717

Abstract: SFH 291
Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER Package Dimensions in Inches mm SFH400 .291 (7.4) .571 114.5) .492(125) » « -20415.2) J T -193(4.9) t o 0100 (2.54) “ ' i 18^ 751 iw? 0.018(0.45) .106 (2.7) Chip Location .220 f5.B) .208(5.3) N : Cathode

Contextual Info: 2SK1472 2083A LD L o w D rive S eries V Dss — 6 0 V 2092A N Channel Power M OS F ET F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage V dss

Contextual Info: 2SJ225 2087 i L D L o w D riv e S e r ie s V D5S= 3 0 V P Channel Power M OSFET E 38 10 F e a tu re s •Small ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Meets radial taping. A bsolute M axim um R atings a tT a = 25°C Drain to Source Voltage

Contextual Info: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C

Contextual Info: SMM-208 1.5-2.5 GHz, 0.8 Watt GaAs MIMIC Amplifier March, 1995 Features - 25dB Gain and 29dBm Output Power - High Power Added Efficiency - Characterized at 3 Volts - Low Cost Surface Mount Package AI 1 I I I I I i 1 > i 1 , li 1 1 I ! I ! T 1 A 1 I C 1 1 ! ’

2sk1468

Contextual Info: 2SK1468 2083a 2092A LD L o w D riv e S e rie s V DSS= 3 0 V N Channel Power M OSFET f '3 7 6 9 A F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

Contextual Info: HIGH RELIABILITY TEST CONDITIONS NO. T E S T C O N D IT IO N T E S T ITE M D U R A T IO N "" ® REFERNCE DOCUMENT ilfi S O L D E R A B IL IT Y 230 ± 5 °C 5 SEC M IL-S T D -202 M E T H O D 208 iiisi LE A D P U LL 2 KG IN A X IA L LEA D D IR E C T IO N 10 SEC

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details WUVT3-208 Product Details Sensors & Protective Relays

Contextual Info: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter