2061 TRANSISTOR Search Results

2SC2061

Abstract: la 7820 T103
Contextual Info: R O H M CO LTD ' ~ 40E J> 7820= ^ h J7 > y X # /T ran sisto rs GGOSbSS 7 BRHM 2S C 2061 T ^ - a T NPN y «;=!> bÿ>yz$ i^S^liaiiffl/M edium Power Amp. lEpitaxial Planar NPN Silicon Transistor 2SC2CS1 sifW'A'vli-7- • i+ïfi'îJ'jÈH/Diinensions Unit : mm

K 1358 fet transistor

Abstract: MAX1679 T101D103-CA 140-103LAG-RBI MAX1879 MAX1879EUA MAX1879EVKIT ZHCS1000 FDC638P FET K 1358
Contextual Info: 19-2061; Rev 0; 5/01 NK EVALUATIO IT AVAILA BLE Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and

2sd2061

Contextual Info: 40E ROHM CO L T ]> 7020^=1 » 0Q0b037 h "7 > v 7> $ /'Tran sistors IRHM 7 2SD 2061 7 ^ 3 3 -0 9 I S 1 “ • NP N h - 7 > v X ^ • ttft V^JViV^I'T Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • Wfé'ÎîÉISI/Dimensions Unit: mm 1) VcE (sat)

Contextual Info: ROHM CO LTD ~ 40E » ? a S Û W QQOSb'iS h 7 > V ^ ^ / T r a n s is t o r s 7 HRHN 2S C 2061 % 2 7 -js r - — N P N h 7 > y z $ l+ S ^ ia H ffl/ M e d iu m Power Amp. ¡Epitaxial Planar NPN Silicon Transistor V1-5JViVvIi-y • ii-Jfi'^jilS/Dimensions Unit : mm

T101D103-CA

Abstract: ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC MAX1879 FDC638P MAX1679 MAX1879EUA
Contextual Info: 19-2061; Rev 0; 5/01 ABLE KIT AVAIL N IO T A U L EVA Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and

ic 2061 d

Abstract: 2061 D transistor 2061 D 2061 CDD2061 2061 transistor 2061 2061D
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2061 9AW TO-220 Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage

ic 2061 d

Abstract: CDD2061 2061 D
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2061 9AW TO-220 Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

2061 D

Abstract: PD 2061 A HCF4070BEY SO14-DIP14 2061
Contextual Info: HCF4070 Quad exclusive OR gate Datasheet − production data Features • Medium-speed operation tPHL = tPLH = 70 ns typ at CL = 50 pF and VDD = 10 V ■ Quiescent current specified up to 20 V ■ 5 V, 10 V and 15 V parametric ratings ■ Input leakage current

HCF4070B

Contextual Info: HCF4070 Quad exclusive OR gate Datasheet − production data Features • Medium-speed operation tPHL = tPLH = 70 ns typ at CL = 50 pF and VDD = 10 V ■ Quiescent current specified up to 20 V ■ 5 V, 10 V and 15 V parametric ratings ■ Input leakage current

VLN 2003a

Abstract: HP 2061 2SC4455 wo8j "1SV 90"
Contextual Info: Ordering number: EN 2814 2SC4455 No.2814 i SAß»YO NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product • Small collector capacity

DS33646

Contextual Info: A Product Line of Diodes Incorporated ZXTC2061E6 ADVANCE INFORMATION 12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data • • NPN + PNP Combination BVCEO > 12 -12 V • Case: SOT26 • Case Material: Molded Plastic, “Green” Molding Compound

Contextual Info: Ordering number:EN 2814 i S A iY O _ 2SC4455 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatu res • Fast switching speed • Low collector saturation voltage • High gain-bandwidth product • Small collector capacity

"to-98" package

Abstract: MPS5172 2N5172 2N6076 PN5172 2n5172 to-92 TO-98 RCA 2N
Contextual Info: G E SOLI» STATE DE | 3075DÛ1 0 0 1 7 C]3T 1 | r* s ' -Signal Transistors 2N5172, MPS5172, PN5172,2N6076 Silicon Transistors TO-92 TO-98

"to-98" package

Abstract: 2N5172
Contextual Info: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a

transistor 2061

Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
Contextual Info: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59

2PB710

Abstract: 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602Q 2PD602R 2PD602S SC59 transistor 2061
Contextual Info: Philips Semiconductors 7 1 1 D flE b D D 7 G0 2 4 bSG • P H IN NPN general purpose transistor FEATURES Objective specification 2PD602; 2PD602A PIN CONFIGURATION • Large collector current • Low col lector-emitter saturation voltage. DESCRIPTION H-

LB 1001 SANYO

Abstract: 2SC4455 T500
Contextual Info: Ordering number:EN 2814 2SC4455 No.2814 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed •Low collector saturation voltage • High gain-bandwidth product • Small collector capacity bsolute Maximum Ratings at Ta = 25°C

2061 D

Abstract: 2PD602S ic 2061 d 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q
Contextual Info: bb53<ì31 OGSbOSÖ lai M A R X Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A N AI1ER P H I L I P S / D I S C R E T E b?E FEATURES • Large collector current • Low collector-emitter saturation voltage. DESCRIPTION

2SA1582

Abstract: sanyo 2033
Contextual Info: ; Ordering number: EN 2505 2SA1582/2SC4113 PN P/ NPN Epitaxial Planar Silicon Transistors SAiYOl Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance (Ri = 2.2kfl,R2= °°)

2SA1572

Contextual Info: Ordering number: EN 2 4 5 8 2SA1572/2SC4067 PNP/ NPN Epitaxial Planar Silicon Transistors I SAKYOi Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance: R1=0, R2=47kii

icl 2025

Abstract: 2005A TRANSISTOR IFW 2SA1591 2SC4133 BT 3713
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D 7 cn ? G 7 f c 1 0 0 0 1 1 7 5 - G E3 T— 37— 13 V" T— 35— 11 P N P /N P N Epitaxial Planar Silicon Transistors 2051 Switching Applications with Bias Resistances R1=4.7kflf R2=47kO 2530 Applications Switching circuit, inverter circuit, interface circuit, driver circuit

Contextual Info: Ordering number: EN2381 No.2381 2 S A 1 5 6 4 /2 S C 4 0 4 8 PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance:

sef530

Abstract: SEF532 SEF531 60v 9A c243s
Contextual Info: S G'S-THOMSON. 0 7 E 73C D 17*12*1237 17518 D •\ ' T N-CHANNEL POWER MDS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement mode Power-Mos field effect transistors. A B SO LU TE MAXIMUM RATINGS

2SA170B

Abstract: 2SC485 2sa105 transistor 2sa1705 2SC4485 2SA1705
Contextual Info: Ordering number: EN 3025 2SA1705/2SC4485 No.3025 SAMYO i PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers. Features . Adoption of FBET process. • Fast switching speed.