2060 RECTIFIER Search Results
2060 RECTIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CRG10A | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG09B | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG11B | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG09A | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG04A | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT | Datasheet |
2060 RECTIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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s38bf14Contextual Info: INTERNATIONAL RECTIFIER MÔ55452 0010715 T BbE International liQRl Rectifier Inverter Type Thyristors 380 TO 2060 AMPS RMS Part number S23AF2A S23AF2B S23AF4A S23AF4B S23AF6A S23AF6B S23AF8A S23AF8B S23AF10A S23AF10B S23AF12A S23AF12B S23AF14A S23AF14B S23AF16A |
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s23af2as23af2bs23af4as23af4b+7 | |
S38BF12B
Abstract: S38BF14B s52kf16b S52KF8B S30EF12A s30ef2a S30EF4A S30EF16A S30EF S23AF8A
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s23af2ao-200abs23af2bs23af4a+15 | |
S38BF14B
Abstract: S52KF16B S38BF12B S34BF10A S38BF16 8600 gt S52KF8B S38BF10B S52KF12B S34BF10B
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s34bf2as34bf2bs34bf4as34bf4b+14 | |
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Contextual Info: 2060 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current19 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage600mí @I(FM) (A) (Test Condition)19 @Temp. (øC) (Test Condition)25’ |
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current19voltage600voltage600mcurrent10m | |
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Contextual Info: DIGITRON SEMICONDUCTORS 1N2054-1N2068 HIGH POWER RECTIFIER MAXIMUM RATINGS 1N Part number Unit 2054 2055 2056 2057 2058 2059 2060 2061 2062 2063 2064 2065 2066 2067 2068 50 100 150 200 250 300 350 400 450 500 600 700 800 900 1000 Peak inverse voltage ELECTRICAL CHARACTERISTICS |
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1n2054-1n2068mil-prf-19500 | |
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Contextual Info: High Efficient Topologies for Next Generation Solar Inverter July 2008, Michael Frisch, Vincotech GmbH, Finsinger Feld 1, 82551 Ottobrunn Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications, |
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Contextual Info: Design Concept for a Transformerless Solar Inverter Dec. 2009, Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Vincotech is able to offer a wide spectrum of power modules for solar applications. In the following we |
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h-2060fz06bia045fhfz06bia045fh02 | |
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Contextual Info: INTERNATIONAL RECTIFIER IO R 73 De | m ö 5S452 0007151 0 I Data Sheet No. PD-3.171 in t e r n a t io n a l , r e c t if ie r S52KF SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 10 fjs 2060 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs VOLTAGE RATINGS |
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5s452s52kfs52kf4b000715b | |
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Contextual Info: Influence of Thermal Cross Coupling at Power Modules Ernö Temesi, Zsolt Gyimothy Vincotech Kft., H-2060 Bicske, Kossuth Lajos u. 59 Abstract The thermal impedance of the semiconductors in Power Modules is always measured for a single chip, without the influence of other surrounding dies. This article describes the increase of the junction temperature of powersemiconductors due to the cross coupling of the Rth of components placed close to each other. The influence of |
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h-2060 | |
st083s12pf0Contextual Info: JCR Inverters International I G R Rectifier V RRM/ Part Number I V DRM 1T RMS 1T(AV) @ T C 00 (A) W (°q (a) (b) (A) (A) Y si U t (V) (A) Fax ^ @ l (V) ,q R 0IC(OC) (A) (jus) Demand Outline (°C/W) Notes Number Key T0-209AC (TO-94) ST083SIOPF.O J 000 135 |
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t0-209acst083siopfst083s12pfst083s04pf+4 | |
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Contextual Info: DISCRETE SEMICONDUCTORS PBYR20100CT series Schottky Barrier rectifier diodes Product specification File under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS ^ 53^31 □ □ 3 2 cJcj a 23s P h ilip s Sem icon du cto r? P ro d u c ts |
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pbyr20100cts3r31 | |
S1C63567
Abstract: K0335 trimmer capacitor ceramic 25pF S1C63000 LC034
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pf1220-01s1c6356758mhzs1c63000+3 | |
SRA 2040
Abstract: sra 20100
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sra2020sra20150o-220acmil-std-202+4 | |
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Contextual Info: SRA2020 . SRA20150 20.0 Amp. Schottky Barrier Rectifiers Current 20.0 A Voltage 20 to 150 V TO-220AC • Low power loss, high efficiency • High current capability, Low VF • High reliability • High surge current capability • Epitaxial construction |
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sra2020sra20150o-220acmil-std-202+1 | |
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Contextual Info: MUR2010CT THRU MUR2060CT 超快恢复整流二极管 Ultra-Fast Recovery Rectifier Diodes •特征 ■外形尺寸和印记 Outline Dimensions and Mark Features Io 20.0A ● VRRM 100V~600V ● 玻璃钝化芯片 Glass passivated chip ● ● TO-220AC .412 10.5 |
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mur2010ctmur2060cto-220acmur2010ct-mur2020ct+3 | |
DC-005
Abstract: 12V DC to 35V dC converter circuit diagram 15S18 12v to 24 v dc dc converter circuit diagram diode e 2060 DC to DC converter 5v to 100V L D SMD DC converter 500V dual transistor 6 pin SMD f1
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400khzdcdc15rev03dc-005+8 | |
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Contextual Info: MBR2035CT-Y thru MBR20200CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
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mbr2035ct-ymbr20200ct-y2011/65/eu2002/96/ec+3 | |
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Contextual Info: SIYU R MBR2030 . MBR2060 肖特基二极管 Schottky Barrier Rectifier 反向电压 30-60V 正向电流 单管 10.0 A Reverse Voltage 30 to 60 V Forward Current(Single) 10.0 A 特征 Features .190(4.83) .140(3.56) .420(10.67) .380(9.65) .055(1.40) |
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mbr2030mbr20600---60v | |
pbyr
Abstract: PBYR20100CT T0220AB SCHOTTKY BARRIER RECTIFIER Diodes diode e 2060
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pbyr20100ctt0220abpbyrschottky barrier rectifier diodes+1 | |
Schottky
Abstract: mbr 2
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mbr2035ct-ymbr20200ct-y2011/65/eu2002/96/ec+5 | |
LGX2W471
Abstract: LGX2D331MELZ25 LGX2D391MELZ30 LGX2D471MELA25 LGX2D471MELZ35 LGX2D222MELC50 lgx2w271melc30 LGX2W471MELC45 LGX2G681MELC45 GX series
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2002/95/ec120hzrated40lgx2w271melc30+14 | |
GX MARKINGContextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GX Snap-in Terminal Type, 105°C Long Life Assurannce, Smaller-Sized series Long life assurance series withstanding 5000 hours application of rated ripple current at 105°C. Suited for rectifier circuit of general inverter, |
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2002/95/ec120hzgx2w181melc25lgx2w221mela40+7 | |
LGX2G181MELA30
Abstract: LGX2W471MELC45 LGX2D331MELZ25 LGX2D391MELZ30 LGX2D471MELA25 LGX2D471MELZ35 LGX2D391 LGX2W820MELZ25 nichicon gx LGX nichicon
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2002/95/ec120hzlgx2w471melc45lgx2w561melc50+11 | |
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Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GX Snap-in Terminal Type, 105°C Long Life Assurannce, Smaller-Sized series Long life assurance series withstanding 5000 hours application of rated ripple current at 105°C. Suited for rectifier circuit of general inverter, |
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2002/95/ec120hz45melb30lgx2w181melc25+6 | |