204 Search Results

CT 2048

Abstract: D8228
Contextual Info: SN74ACT7203L, 204L, SN74ACT7205L, SN74ACT7206L 2048 x 9,4096 x 9,8192 x 9,16384 x9 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES SCAS226A - FEBRUARY 1993 - REVISED SEPTEMBER 1995 Reads and Writes Can Be Asynchronous or Coincident Organization: - SN74ACT7203L - 2048 x 9

TCD131D

Abstract: TC74HC04P 2SA1015-Y 2SA1015 Y
Contextual Info: C D 1 3 1 D The TCD131D is a high resolution and high sensitivity 2048-element linear image sensor. The device can be used foi OCR» POS handscanner bar-code type , and other optical measurements. The device is operated by only 12V power supply. The device is mounted in 22-pin Cerdip package

Contextual Info: T E X A S I N S T R -[ A S I C / N E M O R Y > 7 D D E | A T b l 7 2 S □ □ 3 S 7 E 0 T T -Hb-13-3-5 PRODUCT PREVIEW TBP38SA165, TBP38SA166, TBP38SA16X 16,384-BIT 2048 WORDS BY 8 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES JAN UARY 1985 —REVISED APRIL 1985

programmable storage device

Contextual Info: TMS29F816 16 384-BIT SCOPE DIARY JTAG ADDRESSABLE STORAGE DEVICE SMJS816B-NOVEMBER1990-REVISED JANUARY 1993 FM PACKAGEt TOP VIEW * Member of Texas Instruments SCOPE'“ Family of Testability Products * IEEE 1149.1 Serial Test Bus Compatible * Organization . . . 2048 x 8-Bit Flash Memory

MARKING A1G

Abstract: marking code A1G
Contextual Info: UF4001 - UF4007 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41/DO-204AL Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated chip junction Low cost Ultrafast recovery time for high efficiency High efficiency, low VF

Contextual Info: ◆CMOS Low Power Consumption ◆Input Frequency : 12kHz to 35MHz ◆Divider Ratio : 1, 3~2047 Divisions Laser Trimming ◆Multiplier Ratio : 6~2047 Multiplications (Laser Trimming) ◆Comparative Frequency : 12kHz~500kHz ◆Output Frequency : 3MHz ~30MHz

TC58NVG1S3ETA00

Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Contextual Info: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V8J Description Placement The TS128MLQ64V8J is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

vishay Axial DO-204AR

Contextual Info: Part Marking Information www.vishay.com Vishay Semiconductors Axial > 4 A for DO-204AR Part number V XXXXXXX ZYYWWX Z = Environmental digit - none = Lead Pb -free and RoHS compliant - M = Halogen-free, RoHS compliant, and terminations lead (Pb)-free YY = Two digit for the year

Contextual Info: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations

Contextual Info: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

OP 745

Abstract: G-70
Contextual Info: Ref. #: MS-100026 Last Update: 5-9-05 Dimensions: mm In. 17.40 (.685) 7.50 (.295) 4.85 (.19) PT 7.45 6.65 6.90 (.293) (.261) (.271) 6 (.236) FP OP 2.30 (.09) ø2.60 (ø.102) ø2.30 (ø.09) 8.50 (.334) Min 5 (.196) COM: BLACK NC: GRAY NO: CYAN 5.20 (.204)

mur120-e3

Contextual Info: MUR120 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency DO-204AC DO-15

Contextual Info: SKKT 273/12 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 274 Tc = 100 °C 204 A Tj = 25 °C 9000 A Tj = 130 °C 8000 A Tj = 25 °C 405000 A²s Tj = 130 °C 320000 A²s VRSM 1300 V VRRM 1200 V IT AV ITSM i2t SEMIPACK 3 Thyristor Modules

Contextual Info: SKKH 273/12 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 274 Tc = 100 °C 204 A Tj = 25 °C 9000 A Tj = 130 °C 8000 A Tj = 25 °C 405000 A²s Tj = 130 °C 320000 A²s VRSM 1300 V VRRM 1200 V IT AV ITSM i2t SEMIPACK 3 Thyristor / Diode Modules

Contextual Info: Voltage Controlled Oscillator Typical Performance Data ZX95-2041+ Frequency and Tuning Sensitivity Power Output 2200 35 8.0 34 7.5 33 7.0 FREQ. @ -55°C FREQ. @ +85°C Frequency MHz 2100 T.SENS @ +25°C -55°C Output Power (dBm) FREQ. @ +25°C Tuning Sensitivity (MHz/V)

G993

Abstract: 12v 100w amplifier QFN-24 THS6204 THS6204IPWP THS6204IRHFR THS6204IRHFT
Contextual Info: 204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers

msc 1697

Abstract: el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431 DSP56300
Contextual Info: MOTOROLA Order this document by: DSP56302/D SEMICONDUCTOR TECHNICAL DATA DSP56302 Advance Information 24-BIT DIGITAL SIGNAL PROCESSOR 3 SCI Interface Program RAM 20480 x 24 or X Data Y Data Program RAM RAM RAM 19456 × 24 and × × 24 7168 24 7168 Instruction

11df6

Abstract: 11df6 diode 11DF8 11DF1 11DF5 11DF2 DO-204AL 11DF3
Contextual Info: 11DF1 thru 11DF8 Crownpo Technology Glass Passivated Ultrafast Rectifier Reverse Voltage 100 to 800 V Forward Current 1.0 A Features DO-204AL DO-41 N Plastic package has Underwriters Laboratories Flammability Classification 94V-0 N Cavity-free glass passivated junction

2SA2098

Abstract: 2sc5887 IC 7495 datasheet TA-372 2SA2098-2SC5887 ic 7495 2SA20 7495 ic
Contextual Info: Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2