201473 Search Results
201473 Price and Stock
Samtec Inc HLCD-20-14.73-TR-TR-1 |
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HLCD-20-14.73-TR-TR-1 |
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HLCD-20-14.73-TR-TR-1 | Bulk | 1 |
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HLCD-20-14.73-TR-TR-1 | 1 |
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ITT Interconnect Solutions 120-1473-000Itt Cannon |Itt Cannon 120-1473-000 |
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120-1473-000 |
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CTS Corporation 752201473GP- Bulk (Alt: 752201473GP) |
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752201473GP | Bulk | 24 Weeks | 1,000 |
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752201473GP | 26 Weeks | 1,000 |
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CTS Corporation 752201473GPTR13- Tape and Reel (Alt: 752201473GPTR13) |
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752201473GPTR13 | Tape & Reel | 24 Weeks | 6,000 |
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752201473GPTR13 | Tape & Reel | 26 Weeks | 6,000 |
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CTS Corporation 752201473GPTR7- Tape and Reel (Alt: 752201473GPTR7) |
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752201473GPTR7 | Tape & Reel | 24 Weeks | 1,000 |
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752201473GPTR7 | Tape & Reel | 26 Weeks | 1,000 |
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201473 Datasheets Context Search
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Contextual Info: KSMD8P10TM_F085 100V P-Channel MOSFET TO-252 Features • • • • • • • • -6.6A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101 |
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ksmd8p10tmo-252-100v | |
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Contextual Info: KSMD6N40 / KSMU6N40 TO-252 TO-251 $ $ $ $ $ $ % &'% *+, ,-Ω.)+,() / 0 ,1 2 /0 3 -2 ,(4 ! 5 !!6 " |
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ksmd6n40ksmu6n40o-252o-251+1 | |
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Contextual Info: KSMD5N60C / KSMU5N60C N-Channel MOSFET 600 V, 2.8 A, 2.5 Ω Features TO-251 TO-252 • 2.8 A, 600 V, RDS on = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant Description |
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ksmd5n60cksmu5n60co-251o-252 | |
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Contextual Info: KSMD5N15 / KSMU5N15 TO-252 TO-251 % % % % % % & ' *+,-.+ /Ω0,.)+, 1 2 * & 3 12 4 *3 )+5 ! 6 !!$ " |
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ksmd5n15ksmu5n15o-252o-251+1 | |
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Contextual Info: KSMD3N50C/KSMU3N50C 500V N-Channel MOSFET TO-252 TO-251 Features • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability |
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ksmd3n50c/ksmu3n50co-252o-25130typ | |
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Contextual Info: OBSOLETE October 4, 2011 Ground-Referenced, 80mW Stereo Headphone Amplifier with Up/Down Volume Control General Description Key Specifications The LM4981 is a stereo, ground-referenced, output capacitorless headphone amplifier capable of delivering 83mW of continuous average power into a 16Ω load with less than 1% THD |
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lm4981 | |
L4981Contextual Info: LM4981 Ground-Referenced, 80mW Stereo Headphone Amplifier with Up/Down Volume Control General Description Key Specifications The LM4981 is a stereo, ground-referenced, output capacitor-less headphone amplifier capable of delivering 83mW of continuous average power into a 16Ω load with |
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lm4981l4981 | |
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Contextual Info: KSMD4N20 / KSMU4N20 TO-251 TO-252 & & & & & & ' % (*+,- .Ω/*,-(* 0 1 2 ( 3 01 2 (3 -(4 ! 5 !!$ " |
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ksmd4n20ksmu4n20o-251o-252+1 | |
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Contextual Info: KSMD5P20 / KSMU5P20 200V P-Channel MOSFET TO-252 TO-251 Features • • • • • -3.7A, -200V, RDS on = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested General Description These P-Channel enhancement mode power field effect |
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ksmd5p20ksmu5p20o-252o-251+2 | |
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Contextual Info: KSMD5N30 / KSMU5N30 TO-252 TO-251 % % % % % % & &' *+,) -Ω.*,/)* 0 1 - 2 3 01 - 43 /)5 ! 6 !!$ " |
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ksmd5n30ksmu5n30o-252o-251+1 | |
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Contextual Info: KSMD6N50C / KSMU6N50C 500V N-Channel MOSFET TO-252 TO-251 Features 4.5A, 500V, RDS on = 1.2 Ω @VGS = 10 V Low gate charge (typical 19nC) Low Crss (typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability • • • • • • General Description |
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ksmd6n50cksmu6n50co-252o-251+1 | |
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Contextual Info: KSMD6P25 / KSMU6P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -4.7A, -250V, RDS on = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description |
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ksmd6p25ksmu6p25o-252o-251+2 | |
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Contextual Info: KSMD2N60 / KSMU2N60 600V N-Channel MOSFET TO-251 Features • • • • • • TO-252 2.0A, 600V, RDS on = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description |
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ksmd2n60ksmu2n60o-251o-252+1 | |
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Contextual Info: LM4981 LM4981 Ground-Referenced, 80mW Stereo Headphone Amplifier with Up/Down Volume Control Literature Number: SNAS313G OBSOLETE October 4, 2011 Ground-Referenced, 80mW Stereo Headphone Amplifier with Up/Down Volume Control General Description Key Specifications |
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lm4981snas313g | |
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Contextual Info: LM4981 Ground-Referenced, 80mW Stereo Headphone Amplifier with Up/Down Volume Control General Description Key Specifications The LM4981 is a stereo, ground-referenced, output capacitor-less headphone amplifier capable of delivering 83mW of continuous average power into a 16Ω load with |
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lm4981 | |
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Contextual Info: KSMD3P50 / KSMU3P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -2.1A, -500V, RDS on = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability |
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ksmd3p50ksmu3p50o-252o-251+3 | |
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Contextual Info: KSMD7N10 / KSMU7N10 100V N-Channel MOSFET TO-252 Features • • • • • • TO-251 5.8A, 100V, RDS on = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description |
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ksmd7n10ksmu7n10o-252o-251+1 | |
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Contextual Info: KSMD3N40 / KSMU3N40 TO-252 TO-251 $ $ $ $ $ $ % &' && *+, (Ω-)+.&) / 0 1 & 2 /0 ( %2 .&&3 ! 4 !!5 " |
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ksmd3n40ksmu3n40o-252o-251+1 | |
KSMD6N60Contextual Info: KSMD6N60C 600V N-Channel MOSFET TO-252 Features • 4 A, 600 V, RDS on = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect |
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ksmd6n60co-252ksmd6n60 | |
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Contextual Info: KSMD3N60C 600V N-Channel MOSFET TO-252 Features • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect |
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ksmd3n60co-252 | |
SQA16A
Abstract: LM4891 LM4917 LM4981 LM4981SQ
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lm4981csp-9-111s2sqa16alm4891+2 | |
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Contextual Info: LM4981 LM4981 Ground-Referenced, 80mW Stereo Headphone Amplifier with Up/Down Volume Control T ex a s In s t r u m e n t s Literature Number: SNAS313G October 4, 2011 B O O m r Audio Power Am plifier Series Ground-Referenced, 80m W Stereo Headphone Am plifier |
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lm4981snas313g | |
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Contextual Info: LM4981 Ground-Referenced, 80mW Stereo Headphone Amplifier with Up/Down Volume Control General Description Key Specifications The LM4981 is a stereo, ground-referenced, output capacitor-less headphone amplifier capable of delivering 83mW of continuous average power into a 16Ω load with |
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lm4981 | |
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Contextual Info: KSMD1N60C / KSMU1N60C 600V N-Channel MOSFET TO-251 TO-252 Features • • • • • • 1A, 600V, RDS on = 11.5Ω @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description |
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ksmd1n60cksmu1n60co-251o-252+2 | |