200V TRANSISTOR NPN 5A Search Results

200V TRANSISTOR NPN 5A Result Highlights (5)

Part	Manufacturer	Description	Download
RX1214B130YI	Rochester Electronics LLC	NPN microwave power transistor	PDF
MX0912B251Y	Rochester Electronics LLC	NPN microwave power transistor	PDF
RZ1214B35YI	Rochester Electronics LLC	NPN microwave power transistor	PDF
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet

200V TRANSISTOR NPN 5A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE2549 Contextual Info: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE2549 NTE2549	PDF
NTE2549 Contextual Info: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE2549 NTE2549	PDF
2SC6011A Abstract: 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS	Original	2SC6011/A -2SC6011 -2SC6011A 2SA2151/A 2SC6011 2SC6011A Pow011 2SC6011A 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz	PDF
powertech Abstract: 200v 5a transistor Contextual Info: "BIG IDEAS IN BIG POWER” • PowerTech 70 AMPERES PT-7509 SILICON NPN TRANSISTOR MAXIMUM RATINGS PT-7509 SYMBOL Collector-Base Voltage 200V V CBO Collector-Emitter Voltage 200V V CEO Emitter-Base Voltage 10V V EBO Peak Collector Current 'cm * 70A D.C. Collector Current	OCR Scan	PT-7509 PT-7509 200mA, 100KHz FT-7509 powertech 200v 5a transistor	PDF
NTE2578 Contextual Info: NTE2578 Silicon NPN Transistor TV Horizontal Deflection Output Features: D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE2578 400mA 500mA, NTE2578	PDF
BUW87A Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW87A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers.	Original	BUW87A BUW87A	PDF
2SD1154 Abstract: horizontal transistor Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set.	Original	2SD1154 2SD1154 horizontal transistor	PDF
Contextual Info: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE2307	PDF
BUX41 Abstract: NPN Transistor 8A Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX41 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min) ·High Current Capability ·Good Linearity of hFE APPLICATIONS ·Designed for high speed, high current, high power	Original	BUX41 BUX41 NPN Transistor 8A	PDF
NTE2307 Contextual Info: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE2307 NTE2307	PDF
Contextual Info: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the	Original	ZXTN19100CFF OT23F, ZXTP19100CFF OT23F D-81541	PDF
ZXTN19100CFF Abstract: TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN Contextual Info: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the	Original	ZXTN19100CFF OT23F, ZXTP19100CFF OT23F D-81541 ZXTN19100CFF TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN	PDF
25C1252 Abstract: TE 8802 Contextual Info: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 120 V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A	Original	2SC3834 Pulse14) 100max 120min 30typ 110typ MT-25 25C1252 TE 8802	PDF
2SC3857 Abstract: 2SA1493 DSA0016508 Contextual Info: 2SC3857 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1493 •Electrical Characteristics Ratings Unit ICBO VCB=200V 100max µA V IEBO VEB=6V 100max µA IC=50mA 200min V 200 24.4±0.2 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB	Original	2SC3857 2SA1493) MT-200 100max 200min 50min 20typ 250typ 2SC3857 2SA1493 DSA0016508	PDF

2SC5101 Abstract: 2SA1909 DSA0016511 Contextual Info: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose Ratings Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A	Original	2SC5101 2SA1909) FM100 10max 140min 50min 20typ 250typ 2SC5101 2SA1909 DSA0016511	PDF
2SA1909 Abstract: 2SC5101 Contextual Info: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose 2SC5101 Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A	Original	2SC5101 2SA1909) FM100 10max 140min 50min 20typ 250typ 2SA1909 2SC5101	PDF
Contextual Info: 100 AMPERES P T -3 5 2 0 ULTRA FAST SWITCHING SILICON NPN TRANSISTOR SYMBOL PT-3520 Collector-Base Voltage VCBO 300V Collector-Emitter Voltage VCEO 200V Emitter-Base Voltage VEBO 10V Peak Collector Current •CM* D. C. Collector Current Power Dissipation at 25°C Case Temperature	OCR Scan	PT-3520	PDF
2SC3857 Abstract: 2SA1493 Contextual Info: 2SC3857 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1493 Symbol Conditions 2SC3857 Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V 24.4±0.2 VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat)	Original	2SC3857 2SA1493) MT-200 100max 200min 50min 20typ 2SC3857 2SA1493	PDF
2SC4388 Abstract: NPN Triple Diffused Planar Silicon Transistor transistor b 40 Ic-5A datasheet 2SA1673 Contextual Info: 2SC4388 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1673 V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A	Original	2SC4388 2SA1673) FM100 10max 180min 50min 20typ 300typ 2SC4388 NPN Triple Diffused Planar Silicon Transistor transistor b 40 Ic-5A datasheet 2SA1673	PDF
2SC4388 Abstract: 2SA1673 33 NK 100 Contextual Info: 2SC4388 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1673 Unit V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A	Original	2SC4388 2SA1673) FM100 10max 180min 50min 20typ 300typ 2SC4388 2SA1673 33 NK 100	PDF
2SC3856 Abstract: transistor 2sc3856 power transistor 2sc3856 2SA1492 Contextual Info: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions 2SC3856 Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A	Original	2SC3856 2SA1492) MT-100 100max 180min 50min 20typ 300typ 2SC3856 transistor 2sc3856 power transistor 2sc3856 2SA1492	PDF
2SC3858 Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508 Contextual Info: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A	Original	2SC3858 2SA1494) 100max MT-200 200min 50min 20typ 300typ 2SC3858 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508	PDF
transistor 2sc3858 Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area Contextual Info: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)	Original	2SC3858 2SA1494) 100max 200min MT-200 50min 20typ transistor 2sc3858 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area	PDF
Contextual Info: "BIG IDEAS IN BIS POWER \|A MR PowerTecn lO O A M P E R E S PT*3520 ULTRA FAST SW ITCHING SILICON NPN TRANSISTOR ABSOLUTE M A X IM U M RATINGS SYM BO L PT-3520 Collector-Base Voltage vceo 300V C ollector-Em itter Voltage VCEO 200V E m itter Base Voltage VEBO	OCR Scan	PT-3520 -100A 20OVr	PDF

200V TRANSISTOR NPN 5A Search Results

200V TRANSISTOR NPN 5A Result Highlights (5)

200V TRANSISTOR NPN 5A Datasheets Context Search

NTE2549

NTE2549

2SC6011A

powertech

NTE2578

BUW87A

2SD1154

BUX41

NTE2307

ZXTN19100CFF

25C1252

2SC3857

2SC5101

2SA1909

2SC3857

2SC4388

2SC4388

2SC3856

2SC3858

transistor 2sc3858