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    200V TRANSISTOR NPN 2A Search Results

    200V TRANSISTOR NPN 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    RZ1214B35YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet

    200V TRANSISTOR NPN 2A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    200V transistor npn 2a

    Abstract: 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A
    Contextual Info: NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    NTE2557 200V transistor npn 2a 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A PDF

    nte2650

    Abstract: nte2649
    Contextual Info: NTE2649 Silicon NPN Transistor Darlington Compl to NTE2650 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    NTE2649 NTE2650) nte2650 nte2649 PDF

    NTE375

    Abstract: NTE398
    Contextual Info: NTE375 Silicon NPN Transistor TV Vertical Output Compl to NTE398 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    NTE375 NTE398) 500mA 100mA NTE375 NTE398 PDF

    Contextual Info: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A


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    ENA1836B PCP1208 450mm2Ã PDF

    Contextual Info: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A


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    ENA1836B PCP1208 450mm2 PDF

    transistor A1837

    Abstract: A1837
    Contextual Info: Ordering number : ENA1837A AML2002 Bipolar Transistor 200V, 0.7A, Low VCE sat , NPN Single TO-126ML http://onsemi.com Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A


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    ENA1837A AML2002 O-126ML A1837-7/7 transistor A1837 A1837 PDF

    KSB546

    Abstract: KSD401 vertical tv deflexion KSD401 O
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD401 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 200V(Min) ·Collector Current- IC= 2A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Complement to Type KSB546


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    KSD401 KSB546 KSB546 KSD401 vertical tv deflexion KSD401 O PDF

    Contextual Info: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSB546 • Collector-Base Voltage: VCBO=200V • Collector Current: IC=2A • Collector Dissipation: PC=25W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


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    KSD401 KSB546 O-220 PDF

    Contextual Info: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Vbltage VCBo =200V Collector Current lc=2A Collector Dissipation PC=25W Tc=25°C TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


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    KSD401 KSB546 O-220 PDF

    Contextual Info: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    NTE2307 PDF

    npn 200V 0.2A SOT89

    Contextual Info: WILLAS FM120-M+ 2SD1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR NPN process design, excellent power dissipation offers


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    OT-89 OD-123+ 060TYP 118TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH npn 200V 0.2A SOT89 PDF

    NTE2307

    Contextual Info: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    NTE2307 NTE2307 PDF

    2SC1766

    Abstract: transistor marking HB sot-89 MARKING HB SOT-89 P1766
    Contextual Info: WILLAS FM120-M+ 2SC1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR NPN • Batch process design, excellent power dissipation offers


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    OT-89 OD-123+ FM120-M+ 2SC1766 FM1200-M 060TYP 118TYP FM120-MH FM130-MH FM140-MH transistor marking HB sot-89 MARKING HB SOT-89 P1766 PDF

    Contextual Info: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSD401 KSB546 O-220 KSD401 PDF

    Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 Us A TELEPHONE: 973 376-2922 (212)227-6005 BUY72 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min.) • Low Collector Saturation Voltage:V CE(M i)=1.5V@lc=7A


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    BUY72 PDF

    KSB546

    Abstract: KSD401
    Contextual Info: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSD401 KSB546 O-220 KSB546 KSD401 PDF

    a1837

    Abstract: transistor A1837
    Contextual Info: AML2002 Ordering number : ENA1837A SANYO Semiconductors DATA SHEET AML2002 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A


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    AML2002 ENA1837A A1837-7/7 a1837 transistor A1837 PDF

    transistor n53

    Abstract: ZX5T653F h 033 Marking N53
    Contextual Info: ZX5T653F ADVANCED ISSUE SOT23 NPN SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 200V V(BR)CEO > 100V Ic(cont) = 3.5A Rce(sat) = 40 m typical Vce(sat) < 75 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS


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    ZX5T653F ZX5T653FTA transistor n53 ZX5T653F h 033 Marking N53 PDF

    transistor a1837

    Abstract: a1837 A1837-2 a1837 transistor a1837 datasheet a18371 ENA1837 vceo200v ic10a AML2002 TC-00002562
    Contextual Info: AML2002 Ordering number : ENA1837 SANYO Semiconductors DATA SHEET AML2002 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A


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    AML2002 ENA1837 A1837-4/4 transistor a1837 a1837 A1837-2 a1837 transistor a1837 datasheet a18371 ENA1837 vceo200v ic10a AML2002 TC-00002562 PDF

    Contextual Info: PCP1208 Ordering number : ENA1836 SANYO Semiconductors DATA SHEET PCP1208 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.115V(typ.)@IC=0.35A


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    ENA1836 PCP1208 450mm2 A1836-4/4 PDF

    Contextual Info: AML2002 Ordering number : ENA1837A SANYO Semiconductors DATA SHEET AML2002 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A


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    ENA1837A AML2002 A1837-7/7 PDF

    PCP1208

    Abstract: a1836
    Contextual Info: PCP1208 Ordering number : ENA1836A SANYO Semiconductors DATA SHEET PCP1208 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.115V(typ.)@IC=0.35A


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    ENA1836A PCP1208 450mm2 A1836-7/7 PCP1208 a1836 PDF

    Contextual Info: PCP1208 Ordering number : ENA1836A SANYO Semiconductors DATA SHEET PCP1208 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.115V(typ.)@IC=0.35A


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    PCP1208 ENA1836A 450mm2Ã A1836-7/7 PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


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    2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF