200V TRANSISTOR NPN 2A Search Results
200V TRANSISTOR NPN 2A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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RZ1214B35YI |
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NPN microwave power transistor |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet |
200V TRANSISTOR NPN 2A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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200V transistor npn 2a
Abstract: 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A
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NTE2557 200V transistor npn 2a 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A | |
nte2650
Abstract: nte2649
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NTE2649 NTE2650) nte2650 nte2649 | |
NTE375
Abstract: NTE398
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NTE375 NTE398) 500mA 100mA NTE375 NTE398 | |
Contextual Info: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A |
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ENA1836B PCP1208 450mm2Ã | |
Contextual Info: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A |
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ENA1836B PCP1208 450mm2 | |
transistor A1837
Abstract: A1837
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ENA1837A AML2002 O-126ML A1837-7/7 transistor A1837 A1837 | |
KSB546
Abstract: KSD401 vertical tv deflexion KSD401 O
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KSD401 KSB546 KSB546 KSD401 vertical tv deflexion KSD401 O | |
Contextual Info: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSB546 • Collector-Base Voltage: VCBO=200V • Collector Current: IC=2A • Collector Dissipation: PC=25W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol |
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KSD401 KSB546 O-220 | |
Contextual Info: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Vbltage VCBo =200V Collector Current lc=2A Collector Dissipation PC=25W Tc=25°C TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol |
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KSD401 KSB546 O-220 | |
Contextual Info: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V |
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NTE2307 | |
npn 200V 0.2A SOT89Contextual Info: WILLAS FM120-M+ 2SD1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR NPN process design, excellent power dissipation offers |
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OT-89 OD-123+ 060TYP 118TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH npn 200V 0.2A SOT89 | |
NTE2307Contextual Info: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V |
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NTE2307 NTE2307 | |
2SC1766
Abstract: transistor marking HB sot-89 MARKING HB SOT-89 P1766
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OT-89 OD-123+ FM120-M+ 2SC1766 FM1200-M 060TYP 118TYP FM120-MH FM130-MH FM140-MH transistor marking HB sot-89 MARKING HB SOT-89 P1766 | |
Contextual Info: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted |
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KSD401 KSB546 O-220 KSD401 | |
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Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 Us A TELEPHONE: 973 376-2922 (212)227-6005 BUY72 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min.) • Low Collector Saturation Voltage:V CE(M i)=1.5V@lc=7A |
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BUY72 | |
KSB546
Abstract: KSD401
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KSD401 KSB546 O-220 KSB546 KSD401 | |
a1837
Abstract: transistor A1837
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AML2002 ENA1837A A1837-7/7 a1837 transistor A1837 | |
transistor n53
Abstract: ZX5T653F h 033 Marking N53
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ZX5T653F ZX5T653FTA transistor n53 ZX5T653F h 033 Marking N53 | |
transistor a1837
Abstract: a1837 A1837-2 a1837 transistor a1837 datasheet a18371 ENA1837 vceo200v ic10a AML2002 TC-00002562
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AML2002 ENA1837 A1837-4/4 transistor a1837 a1837 A1837-2 a1837 transistor a1837 datasheet a18371 ENA1837 vceo200v ic10a AML2002 TC-00002562 | |
Contextual Info: PCP1208 Ordering number : ENA1836 SANYO Semiconductors DATA SHEET PCP1208 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.115V(typ.)@IC=0.35A |
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ENA1836 PCP1208 450mm2 A1836-4/4 | |
Contextual Info: AML2002 Ordering number : ENA1837A SANYO Semiconductors DATA SHEET AML2002 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A |
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ENA1837A AML2002 A1837-7/7 | |
PCP1208
Abstract: a1836
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ENA1836A PCP1208 450mm2 A1836-7/7 PCP1208 a1836 | |
Contextual Info: PCP1208 Ordering number : ENA1836A SANYO Semiconductors DATA SHEET PCP1208 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.115V(typ.)@IC=0.35A |
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PCP1208 ENA1836A 450mm2Ã A1836-7/7 | |
IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
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2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 |