200V INPUT VOLTAGE Search Results

Contextual Info: 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE nicfe/ IDT74ALVC08 ADVANCE INFORMATION Integrated Device Technology, Inc. DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0

IRFS610A

Contextual Info: IRFS610A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

RAW24-65R

Abstract: UV-LED RAW24-7R3 rectifier 240V AC 240v dc LED 50A A111 IEC1000-3-2 RAW03-20R RAW05-20R RAW12-8R4 RAW15-6R7
Contextual Info: A111_RAW 1/21 TDK Switching Power Supply Harmonics current requirement compliant, Same shaped as RAX R SERIES RAW UL/CSA/TÜV approved [FEATURES] • Harmonics current requirement IEC1000-3-2 compliant. • Universal input(AC.100 to 200V; Switching not required.), single

Contextual Info: 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tS K o (Output Skew) < 250ps - Low input and output leakage <1 |iA (max) - ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)

HTA20015S

Abstract: HTA2003R3S HTA20003R3S HTA20005D HTA20005S HTA20012D HTA20012S HTA20015D MIL-STD-461 CS101 HTA2003
Contextual Info: PD-97309 HTA-SERIES HIGH RELIABILITY DC/DC CONVERTER 200V Input, Single/Dual Output Description The HTA Series of DC/DC converters is a family of 20W, single and dual output, high reliability devices designed to operate in extremely high temperature environments such as

MIL-STD-461 CS101

Abstract: HTA20005S
Contextual Info: PD-97309C HTA-SERIES HIGH RELIABILITY DC-DC CONVERTER 200V Input, Single/Dual Output Description The HTA Series of DC-DC converters is a family of 20W, single and dual output, high reliability devices designed to operate in extremely high temperature environments such as

Contextual Info: SFS9620 Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^DS on = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V

TSH1511

Abstract: TSH151 TSH151I
Contextual Info: TSH151 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER • ■ ■ ■ ■ ■ LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V/µs VERY FAST SETTLING TIME : 70ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION The TSH151 is a wideband monolithic operational

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in

Contextual Info: Data Sheet AC 200V Input 15V*200mA Output Type Low Standby Consumption With Built In ON/OFF Function Non-Isolated AC/DC Converter BP5078-15 Dimensions Unit : mm Absolute Maximum Ratings Unit Vi Topr Tstg Tcmax Vsurge Iomax 450 −20 to 80 −25 to 105 105

Contextual Info: 3.3V CMOS SINGLE 2-INPUT POSITIVE-NOR GATE DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range o f - 4 0 ° C to + 8 5 °C

Contextual Info: 3.3V CMOS SINGLE 2-INPUT EXCLUSIVE-OR GATE IDT74ALVC1G86 ADVANCE INFORMATION DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 0.65mm pitch PSOP package - Extended commercial range o f- 4 0 ° C to + 85°C

APT0502

Abstract: APT0601 APTM20UM03FAG
Contextual Info: APTM20UM03FAG VDSS = 200V RDSon = 3mΩ typ @ Tj = 25°C ID = 580A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S D Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode

IRFS630A

Contextual Info: IRFS630A Advanced Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0 . 4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 10H A (M ax.) @ V DS = 200V I Low Rds(0n) ■ 0.333 £1 (Typ.)

Contextual Info: 3.3V CMOS SINGLE 2-INPUT POSITIVE-NOR GATE WITH 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 4 0 ° C to +85°C

372a

Abstract: APT0502 APT0601 APTM20SKM04G
Contextual Info: APTM20SKM04G Buck chopper MOSFET Power Module VDSS = 200V RDSon = 4mΩ typ @ Tj = 25°C ID = 372A @ Tc = 25°C Application VBUS Q1 • • G1 Features OUT • S1 CR2 0/VBUS • • • VBUS 0/VBUS Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: SFP9610 Advanced Power MOSFET FEATURES BV DSS = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = -1.75 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -1 0 n A (M a x .) @ V DS = -200V

Contextual Info: IRFR/U230A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V ■ Low RDS(ON) : 0.333 £l(Typ.) LO Rugged Gate Oxide Technology

Contextual Info: IRFS240A Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = 200 V ^ D S o n = 0 .1 8 n lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10H A (M ax.) @ V DS = 200V

APT0406

Abstract: APT0501 APT0502 APTM20DUM08TG
Contextual Info: APTM20DUM08TG Dual common source MOSFET Power Module VDSS = 200V RDSon = 8mΩ typ @ Tj = 25°C ID = 208A @ Tc = 25°C Application D2 Q2 Features G1 G2 S1 S2 • S NTC1 NTC2 • • • • G2 S2 D1 S Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: 3.3V CMOS QUADRUPLE 2-INPUT XNOR GATE WITH 5 VOLT TOLERANT I/O D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MlL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages

Contextual Info: 3.3V CMOS SINGLE 2-INPUT POSITIVE-NOR GATE WITH 5 VOLT TOLERANT I/O J m ïï., FE A T U R E S : IDT74L VC1G02A ADVANCE INFORMATION D E S C R IP TIO N : - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0

Contextual Info: 3.3V CMOS SINGLE 2-INPUT POSITIVE-OR GATE WITH 5 VOLT TOLERANT I/O J m ï ï ., FE A T U R E S : - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 0.65mm pitch PSOP package - Extended commercial range of - 40°C to +85°C

APT0406

Abstract: APT0501 APT0502 APTM20DUM10TG
Contextual Info: APTM20DUM10TG VDSS = 200V RDSon = 10mΩ typ @ Tj = 25°C ID = 175A @ Tc = 25°C Dual common source MOSFET Power Module Q1 Q2 G1 G2 S1 S2 S NTC1 NT C2 G2 S2 D1 S D2 D2 S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance