200V DIODE 1.5V Search Results

1N5429

Contextual Info: 1N5429 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT DescriptionMax.Rad.Level-300T NVT;Post Rad.BV-200V;VF-1.5V;IR-50nA;Ct-6.0pf.

10W ZENER DIODES

Abstract: 10W zener diode zener diode 30c 10 watt zener diode NTE5182A Zener Diode NTE5198A 12 volt zener diode 10 watts 3.9V ZENER DIODE zener 10w NTE5178A
Contextual Info: NTE5174A thru NTE5232A Zener Diode, 10 Watt ±5% Tolerance Features: D Zener Voltage 3.9V to 200V D DO4 Stud Mount Package Absolute Maximum Ratings: Forward Voltage IF = 2A , VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V

marking A04 C

Abstract: 1.5W zener diode axial zener diodes marking code 77 1N5932B 15W ZENER DIODES MARKING 182 DO-35 zener diode
Contextual Info: 1N59xxB SERIES 1.5W Zener Diode .034 0.9 DIA. .028 (0.7) 1.0 (25.4) MIN. .205 (5.2) .165 (4.2) .107 (2.7) DIA. .080 (2.0) PRIMARY CHARACTERISTICS 1.0 (25.4) MIN. VRRM 6.2~200V VF 1.5V TJ max 150°C DO-41 Dimensions in inches and (millimeters) Features Mechanical Data

HFA105NH60

Abstract: IRFP250
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.444 HFA105NH60 TM HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V VF = 1.5V a d Qrr * = 1200nC

HFA105NH60R

Abstract: IRFP250
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.443 HFA105NH60R TM HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V VF = 1.5V a d

Contextual Info: International [îô^Rectifier HFA105NH60R H EXFRED " Ultrafast, Soft Recovery Diode PD-2.443 LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V V f = 1.5V i T i Qrr* = 1200nC

Contextual Info: PD-2.462 International raÊjRectifier HFA60MB60C HEXFRED Ultrafast, Soft Recovery Diode Features V r = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V (4-6) F ^ , ^ ANODE

Contextual Info: International ^Rectifier PD-2.456 HFA70NH60R Ultrafast, Soft Recovery Diode HEXFRED” LUG TERMINAL CATHODE Features Vr = 600V l • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 980nC T = 220A/|JS

Contextual Info: DUAL SILICON CARBIDE SCHOTTKY DIODE SML20SIC06N1M • VR max = 600V • IF(avg) = 20A • VF(typ) = 1.5V • • • • Hermetic Ceramic TO-276AA SMD0.5 Package No Reverse or Forward Recovery Dual Common Cathode Configuration High Reliability Screening Options Available

Contextual Info: PD-2.460 International ^R ectifier HFA70NK60C Ultrafast, Soft Recovëry Diode HEXFRED" BASE COMM 3N CATHODE Features VR = 600V c5 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 520nC 2 ¡3

Contextual Info: ? PD-2.461 International g« ]Rectifier HFA70NC60CSL Ultrafast, Soft Recovery Diode HEXFRED BASE COMMI3N CATHODE Features VR = 600V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.5V Qrr * = 520nC

Contextual Info: International lÉlRectifier PD-2.463 HFA60MC60C Ultrafast, Soft Recovery Diode HEXFRED Features V R = 600V ISOLATEDBASE • Reduced R F I and EM I V F = 1.5V • Reduced Snubbing • Extensive Characterization of Recovery Param eters Qrr * = 500nC , t

Carbide Schottky Diode

Contextual Info: SILICON CARBIDE SCHOTTKY DIODE SML20SIC06M • VR max = 600V • IF(avg) = 20A • VF(typ) = 1.5V • • • • Hermetic TO220 Metal Package No Reverse Recovery No Forward Recovery High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: SILICON CARBIDE SCHOTTKY DIODE SML20SIC06M • VR max = 600V • IF(avg) = 20A • VF(typ) = 1.5V • • • • Hermetic TO220 Metal Package No Reverse Recovery No Forward Recovery High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: PD-2.457 International üü Rectifier HFA70NH60 Ultrafast, Soft Recovery Diode HEXFRED LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V ? ▼ T V F = 1.5V Qrr * = 980nC

Contextual Info: PD-2.459 International 1M]Rectifier HFA70NC60CSM Ultrafast, Soft Recovery Diode H EXFRED BASE COMMI3N CATHODE Features VR= 600V c> • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V F = 1.5V 2 i l ANODE

pn junction diode structure

Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss

Contextual Info: International {^Rectifier P D -2.444 HFA105NH60 Ultrafast, Soft Recovèry Diode HEXFRED" LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V R = 600V ? ▼ T V F = 1.5V Qrr* = 1200nC

FEBFSL206MRN_H428V1

Abstract: SAMXON KM Series samxon capacitor jackcon lhk E156256 jackcon LHK series TRN-0299 58Vac samxon capacitor 4.7 400V FEBFSL206MRN
Contextual Info: User Guide for FEBFSL206MRN_H428v1 Evaluation Board Integrated Controller FSL206MRN 5W Auxiliary Power Supply Featured Fairchild Product: FSL206MRN Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com

Contextual Info: International ^Rectifier PD-2.448 HFA210NJ60C Ultrafast, Soft Recovery Diode HEXFRED LUG TERMINAL ANODE 1 Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TE RMNAL ANODE 2 Vr = 600V V f = 1.5V

MUR840

Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
Contextual Info: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

FGA70N30TD

Contextual Info: FGA70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

diode ed 85

Contextual Info: PD-2.458 International Hü Rectifier HFA140NJ60C HEXFRED* Ultrafast, Soft Recovery Diode i. i LUG TERMINAL ANODE 1 Features • Reduced RFi and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMNAL ANODE 2 V r = 600V V F = 1.5V