200TQ Search Results

Contextual Info: ULTRA-HIGH RESISTANCE VALUES PROFESSIONAL GRADE FILM RESISTORS UHV SERIES FEATURES World’s highest resistance range! • Resistance values up to 200TQ 2 x 1014Q I ■ Standard tolerances: ± 1 % , 2% , 5% , 10% ■ High voltage rating to 10KV. Pulse voltage to 50KV

Contextual Info: January 2001 AS7C33256NTD16A AS7C33256NTD18A 9 .î 65$0 ZLWK 17'TM Features • Organization: 262,144 words x 16 or 18 bits • NTD 1 architecture for efficient bus operation • Fast clock speeds to 200 MHz in LVTTL/LVCMOS • Fast clock to data access: 3.0/3.1/3.5/4.0/5.0 ns

Contextual Info: January 2002 AS7C33128PFS16A AS7C33128PFS18A 3.3V 128K x 16/18 pipeline burst synchronous SRAM Features • Organization: 131,072words × 16 or 18 bits • Fast clock speeds to 200MHz in LVTTL/LVCMOS • Fast clock to data access: 3.0/3.1/3.5/4.0/5.0 ns

Contextual Info: 128K x36/32 and 256K x18 4Mb, ECC, PIPELINE 'NO WAIT' STATE BUS SYNCHRONOUS SRAM MAY 2013 FEATURES • 100 percent bus utilization • No wait cycles between Read and Write

Contextual Info: 19-6291; Rev 0; 4/12 MAX11131 Evaluation Kit Evaluates: MAX11131 General Description Features The MAX11131 evaluation kit EV kit is a fully assembled and tested PCB that evaluates the MAX11131 16-channel, 12-bit, SPI, 3Msps ADC. The EV kit also includes

Contextual Info: September 2002 Advance Information AS7C251MPFS18A 2.5V 1M x 18 pipelined burst synchronous SRAM Features • • • • • • • • • • • • • Organization: 1,048,576 x18 bits Fast clock speeds to 250MHz in LVTTL/LVCMOS Fast clock to data access: 2.6/2.8/3/3.4 ns

Contextual Info: August 2002 Advance Information AS7C331MPFS18A 1M x 18 pipelined burst synchronous SRAM Features • • • • • • • • • • • • • • Organization: 1,048,576 x18 bits Fast clock speeds to 250MHz in LVTTL/LVCMOS Fast clock to data access: 2.6/2.8/3/3.4 ns

Contextual Info: December 2002 Advance Information AS7C251MPFS18A 2.5V 1M x 18 pipelined burst synchronous SRAM Features • • • • • • • • • • • • • Organization: 1,048,576 x18 bits Fast clock speeds to 250MHz in LVTTL/LVCMOS Fast clock to data access: 2.6/2.8/3/3.4 ns

Contextual Info: August 2002 Advance Information AS7C331MPFS18A 1M x 18 pipelined burst synchronous SRAM Features • • • • • • • • • • • • • • Organization: 1,048,576 x18 bits Fast clock speeds to 250MHz in LVTTL/LVCMOS Fast clock to data access: 2.6/2.8/3/3.4 ns

Contextual Info: 128K x36/32 and 256K x18 4Mb, ECC, PIPELINE 'NO WAIT' STATE BUS SYNCHRONOUS SRAM JUNE 2012 PRELIMINARY INFORMATION FEATURES • 100 percent bus utilization

Contextual Info: ULTRA-HIGH RESISTANCE VALUES PROFESSIONAL GRADE FILM RESISTORS UHV SERIES FEATURES World’s highest resistance range! • ■ ■ ■ ■ RCD Type UHV resistors are suited for all high value applications from general purpose bleed chains to highest reliability x-ray systems and

Contextual Info: 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM MAY 2013 FEATURES DESCRIPTION • Internal self-timed write cycle

Contextual Info: February 2002 AS7C33256NTD16A AS7C33256NTD18A 9 .î 65$0 ZLWK 17'TM Features 1 NTD is a trademark of Alliance Semiconductor Corporation. • Economical 100-pin TQFP package • Byte write enables • Clock enable for operation hold • Multiple chip enables for easy expansion

AS7C33256

Contextual Info: AS7C33256PFD16A AS7C33256PFD18A January 2002 3.3V 256K x 16/18 pipeline burst synchronous SRAM Features • Byte write enables • Multiple chip enables for easy expansion • 3.3V core power supply • 2.5V or 3.3V I/O operation with separate VDDQ • 30 mW typical standby power in power down mode

AS7C33256PFD16A

Abstract: AS7C33256PFD18A AS7C33256PFS16A AS7C33256PFS18A TMS320C6X
Contextual Info: AS7C33256PFS16A AS7C33256PFS18A January 2002 3.3V 256K x 16/18 pipeline burst synchronous SRAM Features • Organization: 262,144 words × 16 or 18 bits • Fast clock speeds to 200 MHz in LVTTL/LVCMOS • Fast clock to data access: 3.0/3.1/3.5/4.0/5.0 ns

AS7C33128PFS16A

Abstract: AS7C33128PFS18A TMS320C6X
Contextual Info: March 2002 AS7C33128PFS16A AS7C33128PFS18A 3.3V 128K x 16/18 pipeline burst synchronous SRAM Features • Organization: 131,072words × 16 or 18 bits • Fast clock speeds to 200MHz in LVTTL/LVCMOS • Fast clock to data access: 3.0/3.1/3.5/4.0/5.0 ns

Contextual Info: February 2002 AS7C33256NTD16A AS7C33256NTD18A 9 .î 65$0 ZLWK 17'TM Features • Organization: 262,144 words x 16 or 18 bits • NTD 1 architecture for efficient bus operation • Fast clock speeds to 200 MHz in LVTTL/LVCMOS • Fast clock to data access: 3.0/3.1/3.5/4.0/5.0 ns

Contextual Info: August 2002 Advance Information AS7C331MPFS18A 1M x 18 pipelined burst synchronous SRAM Features • • • • • • • • • • • • • • Organization: 1,048,576 x18 bits Fast clock speeds to 250MHz in LVTTL/LVCMOS Fast clock to data access: 2.6/2.8/3/3.4 ns

Contextual Info: July 2002 Advanced Information AS7C331MPFS18A 1M x 18 pipeline burst synchronous SRAM Features • • • • • • • • • • • • • • Organization: 1,048,576 x18 bits Fast clock speeds to 250MHz in LVTTL/LVCMOS Fast clock to data access: 2.6/2.8/3/3.4 ns

AS7C331MNTD18A

Abstract: AS7C331MPFS18A AS7C33512NTD36A
Contextual Info: December 2002 Advance Information AS7C331MPFS18A 1M x 18 pipelined burst synchronous SRAM Features • • • • • • • • • • • • • • Organization: 1,048,576 x18 bits Fast clock speeds to 250MHz in LVTTL/LVCMOS Fast clock to data access: 2.6/2.8/3/3.4 ns

Contextual Info: 128K x36/32 and 256K x18 4Mb, ECC, FLOW THROUGH 'NO WAIT' STATE BUS SYNCHRONOUS SRAM JUNE 2012 PRELIMINARY INFORMATION FEATURES • 100 percent bus utilization

AS7C33256PFD16A

Abstract: AS7C33256PFD18A AS7C33256PFS16A AS7C33256PFS18A TMS320C6X
Contextual Info: AS7C33256PFD16A AS7C33256PFD18A March 2002 3.3V 256K x 16/18 pipeline burst synchronous SRAM Features • Byte write enables • Multiple chip enables for easy expansion • 3.3V core power supply • 2.5V or 3.3V I/O operation with separate VDDQ • 30 mW typical standby power in power down mode

AS7C33256NTD18A

Contextual Info: March 2002 AS7C33256NTD16A AS7C33256NTD18A 9 .î 65$0 ZLWK 17'TM Features 1 NTD is a trademark of Alliance Semiconductor Corporation. • Economical 100-pin TQFP package • Byte write enables • Clock enable for operation hold • Multiple chip enables for easy expansion

AS7C33256PFD16A

Abstract: AS7C33256PFD18A AS7C33256PFS16A AS7C33256PFS18A TMS320C6X
Contextual Info: AS7C33256PFS16A AS7C33256PFS18A March 2002 3.3V 256K x 16/18 pipeline burst synchronous SRAM Features • Organization: 262,144 words × 16 or 18 bits • Fast clock speeds to 200 MHz in LVTTL/LVCMOS • Fast clock to data access: 3.0/3.1/3.5/4.0/5.0 ns