200P03LS Search Results
200P03LS Price and Stock
Rochester Electronics LLC BSC200P03LSGP-CHANNEL POWER MOSFET |
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BSC200P03LSG | Bulk | 568 |
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Infineon Technologies AG BSC200P03LSGAUMA1MOSFET P-CH 30V 9.9/12.5A 8TDSON |
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BSC200P03LSGAUMA1 | Reel |
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BSC200P03LSGAUMA1 | 2,191 |
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Infineon Technologies AG BSC200P03LSGPower Field-Effect Transistor, 9.9A, 30V, 0.02ohm, P-Channel, MOSFET |
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BSC200P03LSG | 13,641 | 1 |
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200P03LS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BSC200P03LS GContextual Info: 200P03LS G OptiMOS -P Power-Transistor TM Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications |
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BSC200P03LS 200P03LS BSC200P03LS G | |
Contextual Info: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications |
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BSC200P03LS IEC61249-2-21 200P03LS | |
Contextual Info: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW -12.5 ID A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications |
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BSC200P03LS IEC61249-2-21 200P03LS JESD22-A114-HBM 00V-1kV) | |
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Abstract: BSC200P03LS G
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BSC200P03LS IEC-61249-2-21 200P03LS 25gerous D125 tf BSC200P03LS G | |
Contextual Info: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications |
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BSC200P03LS 200P03LS | |
D125 tf
Abstract: 200P03LS
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BSC200P03LS 200P03LS D125 tf 200P03LS |