A 4503
Abstract: 4503B 150J
Contextual Info: 1. M ech an ical D im ensions: 2 . S c h e m a tic : o 150J o A 4.5±0.3 1 .5 1 .5 3. E lectrical Specifications: OCL: 15uH ±5% DCR: 2 .5 0 □a oj PCB 3.0 O hm s Max R a te d DC C u rre n t: Q: 5 0 Min @ 2 .5 2 M H z SRF: - @ 2.5 2M H z 1 7M H z 200nnA M ax
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mil-std-202gul94-v-0e15155610d5s+752mhz200ma17mhzxfwi453232a 45034503b150j
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K35V4045
Abstract: FK35V4045
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK35V4045 14.0— 14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 .0 ~ 14.5 GHz-band amplifiers. The herm etically sealed metal-ceramic
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fk35v404535v4045200nnak35v4045 |
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a 4514
Abstract: transistor B414
Contextual Info: 6 D I1 5 M - 1 2 0 is a '< * 7 — Y *7 > i * 7 > 9 d . — )\* : Outline Drawings POWER TRANSISTOR MODULE : Features 2G.5 7.5 14 7.5 IJ 7.5 16 • 3SS&ItS*''rSl'<' High Arm Short Circuit Capability • h F E A '^ l' High DC Current Gain 9 — t — K 1*1/ Including Free Wheeling Diode
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l95t/r89shl50a 4514transistor b414 |
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