200NH Search Results

LLV1005-FB

Abstract: LLV1005-FBR12J LLV1005-FBR15J LLV1005-FBR18J LLV1005-FBR20K at20b T2045
Contextual Info: Multilayer Chip Inductors 積層チップインダクタ LLV1005-FB Series Inductance Range: 120~200nH Temperature Coefficient of L: + 250ppm/°C for reference only FEATURES／特長 • High SRF • No polarity • Dual frequency standard for inductance value

Contextual Info: SMT POWER INDUCTORS Power Beads - PA2509NL Series Current Rating: Over 75Apk Inductance Range: 70nH to 200nH Height: 8.0mm Max Footprint: 7.0mm x 8.5mm Max Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 7 Saturation Current 3

SL3032A-R15MU

Contextual Info: SL3032 Series RoHS COMPLIANT 1. Features: • Ferrite based SMD Inductor with lower core loss. · Inductance Range:70nH to 200nH. Custom values are welcomed. · High current output chokes, upto 70 Amp with max. 20% roll off. · Low Profile 8.0mm Max. height .

1500V

Contextual Info: SWITCHING LOSS VS. COLLECTOR CURRENT TYPICAL SWITCHING LOSS, ESW(on), ESW(off), (J/PULSE) 1.50 VGE = 15V Tj = 125°C RG = 7.5Ω LS = 200nH ESW(on) ESW(off) 1.25 1.00 Inductive Load 0.75 0.50 VCC = 2000V 1500V 0.25 1000V 100 200 300 400 COLLECTOR CURRENT, IC, (AMPERES)

HD13X

Abstract: HD14Y HD12X HD15Y HD13Y HD11X HD14X HD10X HD15X
Contextual Info: VM313H24 August, 1995 FEATU R ES • High Performance: - Read Mode Gain = 250V/V - Low Input Noise = 0.8nV/VHz Maximum - Input Capacitance = 25pF Maximum - Write Current Range = 10mA to 40mA - Head inductance Range = 200nH to 3|iH - Head Voltage Swing = 7Vp-p Minimum

J-STD-020 SAC305

Abstract: 094g 30151AC 3000A
Contextual Info: 3000A Series www.murata-ps.com Surface Mount Power Inductor SELECTION GUIDE Order Code 30800AC 30101AC 30151AC 30201AC FEATURES „ Low-profile surface-mount design „ Inductance Range from 80nH to 200nH „ Rated current up to 57Apk „ Materials meet UL94V-0

2-20GHZ

Abstract: AGILENT 16092a
Contextual Info: Multilayer Chip Inductors 積層チップインダクタ LLV1005-FB Series Inductance Range: 1.0~200nH Temperature Coefficient of L: + 250ppm/°C for reference only FEATURES／特長 • High SRF (More than twice: Compared with Toko’s conventional 1005 model)

1500V

Abstract: 200NH 1250V
Contextual Info: SWITCHING LOSS VS. COLLECTOR CURRENT TYPICAL SWITCHING LOSS, ESW(on), ESW(off), (J/PULSE) 1.0 VGE = 15V Tj = 125°C RG = 7.5Ω LS = 200nH ESW(on) ESW(off) Inductive Load 0.8 0.6 VCC = 1500V 0.4 1250V 0.2 1000V 100 200 300 400 COLLECTOR CURRENT, IC, (AMPERES)

SG3000GXH29

Abstract: SG3000GXH 13-108D1A
Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent

SG3000GXH29

Contextual Info: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us

high-speed power mosfet 2Mhz

Abstract: LM27212 5Vto28V
Contextual Info: LM27222 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Literature Number: SNVS306A LM27222 High-Speed 4.5A Synchronous MOSFET Driver General Description Features The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically

NN12

Abstract: P35-4100-0
Contextual Info: P35-4100-0 MONOLITHIC BROADBAND AMPLIFIER, 0.05 - 3.5GHz Features • Ultra Broadband • Flat Frequency response with direct gain control • 20dBm output power capability • Input and output matched to 50Ω Description The P35-4100-0 is a high performance monolithic broadband amplifier designed for use in a wide range

MSK640

Abstract: MSK640B 640B CR2424 LH2424 MSK620
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 640 WIDE BANDWIDTH, HIGH VOLTAGE CRT VIDEO AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Pin Compatible with LH2424 and CR2424 High-Rel Versions 2nS Transition Times

2482S

Abstract: mm1167 LQG15HS27NJ02 MURATA VCO Series 2.4GHz Cordless Phone circuit diagram CHOKE RF 1206 LQH MURATA LQH55DN102M03 LQH66SN100M03 LQH32MN1R5 SMD MARKING CODE N03
Contextual Info: !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specificaions before ordering.

T0258HF65G

Contextual Info: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C

160nF

Abstract: DIM900ESM45-F000
Contextual Info: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability

amorphous head

Abstract: 1p39 al 220 8309 1P18T Amorphous AS AMORPHOUS CORE al260 2p30 NAM-C28A
Contextual Info: 1 2005/01 AMORPHOUS CORE AND COILS 溶融した合金を結晶化を起こさずに急速に冷却凝固する液体急冷法と呼ばれる製法で得られる薄板状のアモルファス合金 は、磁気的性質や硬度・強度などの機械的性質において、従来の結晶構造の合金では得られない数々の優れた特徴を有し、

Contextual Info: APT15GT60 BR • R A dvanced W A P o w er T e c h n o lo g y 6oov 3o a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

V7NB-40A18B

Abstract: V7NB-40A180 V7NB-40A18
Contextual Info: NON-ISOLATED DC/DC CONVERTERS 12V Input / Programmable Output / 40A VRM 9.0 Compatible V7NB-40A180 PRELIMINARY • High efficiency means less power dissipation • Remote on/off • 2-Wire Remote sense • Optional 5 bit voltage programming schemes o Intel VRM 9.x compatible 1.1V to 1.85V

Contextual Info: LQP03TNR20H02# # indicates a package specification code. < List of part numbers with package codes > LQP03TNR20H02D , LQP03TNR20H02J , LQP03TNR20H02B Shape References Packaging code Specifications Minimum quantity D φ180mm Paper taping 15000 J φ330mm Paper taping

Contextual Info: SMT POWER INDUCTORS Power Beads - PA314xAHL Series Coupled Inductor 8mm Coupled Inductors for Volterra Gen2.5 Applications For use only with Volterra chipsets Coupled Inductors enable: • Phase ripple current reduction due to AC magnetic field cancellation within the

Contextual Info: SL6649-1 IS FOR MAINTENANCE PURPOSES ONLY AND IS N O T RECOMMENDED FOR N E W DESIGNS Si GEC PLESSEY S E M I C O N D U C T O R S SL6649-1 200MHz DIRECT CONVERSION FSK DATA RECEIVER Supersedes edition in August 1994 Personal Communications 1C Handbook The SL6649-1 is a low power direct conversion radio

cn/A/U 237 BG

Contextual Info: AVX Periodic Tables Version 10.1 The Latest CV Tables from the Leader in Capacitor Technology Table of Contents COMMERCIAL PRODUCTS Product Line Card . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4 CERAMIC CAPACITORS

Fuses A

Abstract: fuse base IEC 269
Contextual Info: NH KNIFE BLADE NH fuses are typically used for power distribution applications and to protect large electrical devices such as motors, drives, etc. They are available in seven sizes with a current range of 2 to 1600 Amps. NH fuses have knife blades at both ends,