200IV Search Results

lv 8013

Abstract: ITAR B945 "network interface cards"
Contextual Info: ff?/31/95 09‘.34'.55 40B-943-ZB43-> CYPRESS • Compile* with IEEE B02Jn draft standard • Three operating n ode« — 100BASE-T4 — 10BASE-T Full D n p la — 10BASE-T • Media Independent Interface Mil — Three-state receive port — Serial management port

CY7C199-20DC

Contextual Info: CYPRESS 4bE SEMICONDUCTOR asa%t>a » aoobba? 3 i CYP CY7C198 CY7C199 CYPRESS SEMICONDUCTOR 32,768 x 8 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Hlgb speed — 25 ns » Low active power

C1885

Abstract: 7C188 C1884 300-MU
Contextual Info: 32K x 9 Static RAM Features Functional Description • High speed — 15 ns • Automatic power-down when deselected • Low active power — 660 raW • Low standby power — 140 mW • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Easy memory expansion with CEj,

Contextual Info: J5T ADVANCED INFORMATION CY82C694 Pentium hyperCache™ Chipset 128KB Expansion RAM Features • Interfaces directly to hyperCache™ Chipset at 66 MHz with 0 wait states • Fully registered inputs and outputs in Pipelined mode operation • 16K x 64 common I/O architecture

Contextual Info: PRELIMINARY CY82C692 Pentium hyperCache™ Chipset Data-Path/Integrated Cache for h C -VX, h C -D X Solutions Features Two-bit wraparound counter supporting Intel Burst or Linear burst sequence Supports 3-1-1-1 Level 2 cache operation up to 66 MHz bus speed

EQUIVALENT cd 1031 cs

Abstract: 7C1031
Contextual Info: CY7C1031 CY7C1032 PRELIM INARY 64K x 18 Synchronous Cache RAM • Direct interface with the processor and external cache controller • Asynchronous output enable • VOs capable of 33V operation • JEDEC-standard pinout • 52-pin PLCC and PQFP packaging

450ME

Abstract: 6CA7
Contextual Info: CY62256 PRELIMINARY 32K x 8 Static RAM Features Functional Description • 55, 70 ns access time • CMOS for optimum speed/power • Low active power 70 ns, LL version — 275 mW (max.) • Low standby power (70 ns, LL version) — 28 nW (max.) • Easy memory expansion with CE and

CY7c911

Abstract: CY7C909 stk 654 C909 CY7C911-30PC Register push pop
Contextual Info: CY7C909 CY7C911 CMOS Micro Program Sequencers CYPRESS SEMICONDUCTOR Features • Fast — CY7C909/11 has a 30-ns min. clock-to-output cycle time (com­ mercial and military) • Low power — Icc (max.) = 55 mA (commercial and military) • V<x' margin —5V+1»%

Contextual Info: Features « 128 macrocells in eight logic blocks • 64 I/O pins • 6 dedicated inputs including 4 clock pins • No hidden delays • High speed — fMAx = 100 MHz — tpo = 12 ns — ts = 7 ns " tco = 7 ns • Electrically Alterable Flash technology • Available in 84-pin PLCC, 84-pin

Contextual Info: CY7C130/CY7C131 _ CY7C140/CY7C141 = SEMICONDUCTOR 1024 x 8 D ual-Port Static R A M Features Functional Description • 0.8-micron CMOS for optimum speed/power T he CY 7C 130/CY7C13 L/CY7C140/ CY7C141 arc high-speed C M O S IK by 8 dual-port static RA M s. Two ports are pro­

Contextual Info: CY7C128A CYPRESS SEMICONDUCTOR 2Kx 8 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 440 mW commercial — 550 mW (military) • Low standby power

Contextual Info: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR IK x 4 Static RAM Features Functional Description • Automatic power-down when dese­ lected 7C148 • CMOS for optimum speed/power • 25-ns access time • Low active power — 440 m ff (commercial) — 605 mW (military)

7C101

Contextual Info: CY7C101A CY7C102A PRELIMINARY 256Kx 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C101Aand CY7C102A are highperformance CMOS static RAMs orga­ nized as 262,144 x 4 bits with separate I/O. Easy memory expansion is provided by ac­

Contextual Info: PRELIMINARY CYPRESS 128Kx 8 Static RAM Features Functional D escription • High speed — t/\A = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 jiW • Automatic power-down when

Contextual Info: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR 1024 x 4 Static RAM F eatu res F u n ctio n al D escrip tio n • Automatic power-down when dese­ lected 7CÌ48 • CMOS for optim um speed/power • 25-ns access time • Low active power — 440 mW (commercial) — 605 mVV (m ilitary)

Contextual Info: CY7B194 CY7B195 CY7B196 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed - 12 ns U* The CY7B194, 7B195. and CY7B196 are high-performance BiCMOS static RAMs organized as 65,536 words by 4 bits. Easy

pioneer ic

Contextual Info: fiÀ PIONEER ~ PI2C2158 PI2C2157 — 16K x 16 SPARC CACHE SRAM PI2C2158 — 16K x 16 SPARC™ CACHE SRAM S E M I C O N D U C T O R C O R P O R A TION II111 II1IIII11111 IIII11II111II111 II111111111 II11111111111 Product Features: • 16K x 16 Synchronous Static

Contextual Info: CY7C164A CY7C166A 16Kx 4 Static RAM Features Functional Description • High speed — 20 ns • Output enable OE feature (7C166A) • CMOS for optimum speed/power • Low active power — 550 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

Contextual Info: CY101E383 ECL/TTL/ECL Translator and High-Speed Bus Driver ’# C Y P R E S S Features Functional Description • B iC M O S for optimum speed/power The C Y IO IL3 K 3 is a ncw-gcneriition T T L- to - LC L and I-CL-to-ITL logic level Iranslalor designed tor high-performance

CY74FCT162652T

Abstract: CY74FCT16652T C948
Contextual Info: CY74FCT16652T CY74FCT162652T CYPRESS Features ' • Low power, pin-compatible replacement for ABT functions • KCT-C speed at 5.4 ns • Power-off disable outputs permits live insertion • Edge-rate control circuitry For significantly improved noise characteristics

Contextual Info: CY7B201 PRELIMINARY SEMICONDUCTOR Reprogrammable 128K x 8 Power-Down PROM Features Functional Description • BiFAMOS for optimum speed/ power • Highspeed — U a = 25 ns max. commercial — 1aa = 30 ns max. (m ilitary) • Low-power stand-by mode — 1210 mW max.

CY7C164-35PC

Abstract: CY7C164-20PC CY7C164-15LC CY7C164-20VC CY7C164-20DC CY7C164-20LC CY7C164-25PC CY7C164-25VC 7C164-25DC CY7C164
Contextual Info: CY7C164 CY7C166 CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when deselected • Output Enable OE feature (7C166) • CMOS for optimum speed/power • High speed — Iaa = 15 ns • Low active power

Contextual Info: CY7C185 W CYPRESS SEMICONDUCTOR 8K x 8 Static RAM Features Functional Description • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active H IG H chip enable (CE 2).

Contextual Info: CY7C1399 32Kx 8 3.3V Static RAM Features Functional Description • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — 12/15 ns • Low active power — 255 mW max. • Low CMOS standby power (L) — 180 [aW (max.), ì-ìm a x