200IIH Search Results

Contextual Info: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability

Contextual Info: APT20GT60BR A dvanced I T J R ow er T e c h n o lo g y 6oov 4o a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

2SC3089

Abstract: 7atib014a
Contextual Info: Ordering number: EN 1012A NO.1012A 2SC3089 SA\YO NPN Triple Diffused Planar Silicon Transistor i F or S w it c h in g Re g u l a t o r s Features . High breakdown voltage v c b o £ oov^ . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25 C

ce 2752

Abstract: 14A3DIN BYW32 S 876 T w327 Scans-0014928
Contextual Info: TELEFUNKEN ELECTRONIC 1 ?E D • 6 T 5 0 Q c}b D ü O ^ b l S , S 876 T TFIilLtiiFMMlKilN] electronic Cfuttveüechootog* T - 3 3 - 1 3 Silicon NPN Power Transistors A p p lica tio n s: Sw itching mode power supply, inverters, motor control and relay driver

Thunderbolt

Contextual Info: APT20GT60KR A dvanced R ow er T e c h n o lo g y 6oov 4o a Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.