200AJ Search Results

HFA45HC60C

Abstract: transistor k31
Contextual Info: PD-2.368 International US Rectifier_ HEXFRED Provisional Data Sheet HFA45HC60C 600V, 45A ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Units Vbr per leg 600 V lF(AV) 45* A trr (Per leg) 75 ns Qrr (per leg) 375 nC

IRGKI200F06

Abstract: IGBT FF 300 l200a
Contextual Info: International lü Rectifier PD-9.968C IRGKI200F06 Fast Speed IGBT "CH O PPER “ IGBT INT-A-PAK V CE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail"

Contextual Info: P D -9.1584 International IG R Rectifier IRG4PC40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 k H z , and Short

FA30PA60

Abstract: HFA30PA60C
Contextual Info: bSE D INTERNATIONAL RECTIFIER • 4055452 G G 1 7 ? n Ö4G ■ INR PD-2.336 International S Rectifier HEXFRED Provisional Data Sheet HFA30PA60C u l t r a f a s t , s o f t r e c o v e r y d io d e Major R atings and C h a ra cteristics per Leg C haracteristics

Contextual Info: International IQR Rectifier PD -5.044 CPV362M4U PRELIMINARY IGBT SIP MODULE Features • • • • UltraFast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail“ losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz

Contextual Info: PD-2.338 International iliRectifier HEXFRED Provisional Data Sheet HFA25PB60 Major Ratings and Characteristics Units Characteristics 600 V 'F AV 25 A trr (typ) 23 ns Qrr (typ) 112 nC 10 A di(rec)M/dt (typ) 250 AJa$ VF 1.7 V Vr vrrm IRRM 600V, 25A ULTRA FAST, SOFT RECOVERY DIODE

200BP

Abstract: SP 1191 SP-1191 200BN 200de 200DO tcxo200 200da 200ap TCXO L
Contextual Info: PAK/HC COY ELEK-. O V E N A I D • b7gfl510 0 0 0 0 3 7 7 cm ci ■ OKU TCXOs 200 Series, 200 KHz to 25 MHz, TTL or HCMOS TCXO’s T h e 2 0 0 s e rie s is d e s ig n e d using s u rfa c e m ount tech n o lo g y to p ro vid e a highly reli- < a b le y e t c o s t e ff e c t iv e T C .X O p r o d u c t.

200DF

Abstract: 200CB 200BN 200AF 200AL 200DG 200BP
Contextual Info: OAK/nC CO Y ELEK-. OVENAI D *'-• ^7ga5L0 000037? ^ ■ OKH TCXO's 200 Series, 200 KHz to 25 MHz, TTL or HCMOS TCXO's nm m sm t m <IPWP ■ «L- eneral The 200 series is designed using surface - mount technology to provide a highly reli: able yet cost e ffe c tiv e TC.XO product.

IRG4BC20KD-S

Contextual Info: PD-9.1598 International IGR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short