200A NEC Search Results

2sk2365

Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
Contextual Info: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A

PBT-GF30 FR

Abstract: 7283-1020
Contextual Info: Automation Controls Catalog 10A and 80A types *20A type: only UL (Recognized) 200A type has been added. High Capacity of Max. 1,000 V DC Cut-off Possible EP RELAYS (AEP) FEATURES 10A PC board type 10A TM type 20A TM type 80A type New 200A type 300A type

YAZAKI7122-1407

Abstract: PBT-GF30 FR
Contextual Info: EP AEP (10A, 20A and 80A types) 200A type has been added. High Capacity of Max. 1,000 V DC Cut-off Possible EP RELAYS (AEP) FEATURES 10A PC board type 10A TM type 20A TM type 80A type New 200A type 300A type RoHS compliant 1. High-voltage, high-current control

Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated

hall current transducer

Contextual Info: CUSTOMER CUSTOMER CODE PART DESCRIPTION HALL EFFECT CURRENT TRANSDUCER OPEN LOOP HCT 200A V. Output INTERNAL CODE HCT-BP2 DATE 23/08/10 EDITION 1 DOCUMENT NAME HCT-BP2_1.doc PAGE 1/6 HALL EFFECT CURRENT TRANSDUCER 200A OPEN LOOP VOLTAGE OUTPUT NOTES All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisati on.

Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated

Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated

IEC61800-5-1

Abstract: IFS200V12PT4 IGBT Driver ic and 20khz AN2009-07 DIN125 DIN7984 IGBT collector voltage 5kV IEC60721 igbt sixpack B1148
Contextual Info: Technical Information MIPAQ serve IFS200V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 200A Load type

FS200R12KT4

Abstract: FS200R12KT4R E83335
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS200R12KT4R VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 200A / ICRM = 400A TypischeAnwendungen • Motorantriebe • Servoumrichter TypicalApplications • MotorDrives

Contextual Info: SANGDEST MICROELECTRONICS SD360B Green Products Technical Data Data Sheet N0566, Rev. A SD360B STANDARD RECTIFIER Features: Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 200A Peak

IFS200V12PT4

Contextual Info: Technical Information MIPAQ serve IFS200V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 200A Load type

Contextual Info: < IGBT MODULES > CM200EXS-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM200EXS-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM200DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

ifm 5078

Contextual Info: SENSITRON SEMICONDUCTOR SEN-5078 PART NUMBER: SEN-5078, ENG. - 3-Phase Bridge + Dynamic Braking - IGBT Module 600V, 200A Features: • Multiple Layer, Moisture and Contamination Resistant Construction • Increased Creepage and Clearance Distances for High Altitude

Contextual Info: < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM200DX-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM200DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM200RXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Mitsubishi Materials Thermistor

Abstract: CM200DX-24S
Contextual Info: < IGBT MODULES > CM200DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

IE-200

Contextual Info: < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM200DX-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM200DX-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM200RXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .