200909 Search Results

SMD INDUCTOR marking code 224

Abstract: MW79 lcr 0202
Contextual Info: SPECIFICATION FOR APPROVAL REF : 20090903-A PROD. NAME PAGE: 1 SH6038□□□□L□-□□□ ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： A B C D E G H I R : : : : : : : : : ±0.2 ±0.2 ±0.2 typ. typ. ref.

Contextual Info: SPECIFICATION FOR APPROVAL REF : 20090903-A PROD. NAME PAGE: 1 ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SH6038□□□□L□-□□□ ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： A B C D E G H I R : : : : : : : : : ±0.2 ±0.2 ±0.2 typ. typ. ref.

2SK41

Abstract: k4114
Contextual Info: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)

Contextual Info: TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK15H50C ○ Switching Regulator Applications • Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) : |Yfs| = 8.5 S (typ.) • High forward transfer admittance

2SK4105

Abstract: K4105 2SK41 K-410
Contextual Info: 2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4105 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)

Contextual Info: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.)

Contextual Info: TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK16H60C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 32 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current

Contextual Info: 2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2985 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 70 S (typ.)

sp-240-24

Abstract: pfc 41v SP-240-12 284-K
Contextual Info: SP-240 240W Single Output with PFC Function series Features : Universal AC input / Full range Built-in active PFC function, PF>0.95 Protections: Short circuit / Overload / Over voltage / Over temperature Forced air cooling by built-in DC Fan Built-in fan ON / OFF control

LQFP64 reel size

Abstract: ISP1161A isp1161 ISP1160BD01TM HCPI WHCB ISP116001
Contextual Info: ISP1160/01 Embedded USB host controller Rev. 07 — 29 September 2009 Product data sheet 1. General description The ISP1160/01 is an embedded Universal Serial Bus USB Host Controller (HC) that complies with Universal Serial Bus Specification Rev. 2.0, supporting data transfer at

ssop8*0.65

Abstract: hu04 U-04
Contextual Info: TC7WHU04FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WHU04FU,TC7WHU04FK Triple Inverter Un-Buffer Features TC7WHU04FU • High speed: tpd = 3.5 ns (typ.) at VCC = 5 V, CL = 15pF • Low power dissipation: ICC = 2 A (max) at Ta = 25°C

Contextual Info: 1/2 Chip Beads(SMD) For Power Line Conformity to RoHS Directive MPZ Series MPZ1005 Type SHAPES AND DIMENSIONS/RECOMMENDED PC BOARD PATTERN 1±0.05 0.5 0.5±0.05 FEATURES • TDK has manufactured MPZ1005 type as EMI countermeasure product for power line.

Contextual Info: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

PA9540

Abstract: PA9540B
Contextual Info: PCA9540B 2-channel I2C-bus multiplexer Rev. 04 — 3 September 2009 Product data sheet 1. General description The PCA9540B is a 1-of-2 bidirectional translating multiplexer, controlled via the I2C-bus. The SCL/SDA upstream pair fans out to two SCx/SDx downstream pairs, or channels.

25gbps pin-tia

Contextual Info: P/N: T-11-2500-X3-XXX/XXX-XX 2.5Gbps PIN-TIA Receiver Modules 3.3V Features z z z z z InGaAs/InP PIN Photodiode with transimpedance amplifer High Sensitivity with AGC* Differential ended output Single Supply Voltage 3.3V -40~85°C operating temperature Packaging

MB91F467EA

Contextual Info: MB91460E-DS705-00002-1v3-E.fm Page 1 Wednesday, September 29, 2010 9:47 AM FUJITSU SEMICONDUCTOR DATA SHEET DS705-00002-1v3-E 32-bit Microcontroller CMOS FR60 MB91460E Series MB91F467EA • DESCRIPTION MB91460E series is a line of general-purpose 32-bit RISC microcontrollers designed for embedded control

Contextual Info: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

Contextual Info: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The

Contextual Info: Preliminary Datasheet XP-XE-04-IDFA Features  XFP MSA Rev 4.5 compliant  Support 10GBASE-ER application  Up to 40km transmission on SMF  1550nm EML and PIN receiver  XFI high speed electrical interface  2-wire interface with integrated Digital Diagnostic monitoring

DS-5175

Contextual Info: Preliminary Datasheet XP-XE-04-CDFA Features  XFP MSA Rev 4.5 compliant  Support 10GBASE-ER application  Up to 40km transmission on SMF  1550nm EML and PIN receiver  XFI high speed electrical interface  2-wire interface with integrated Digital Diagnostic monitoring

Contextual Info: P/N: C-13-1315T-11-XX 1310nm Laser Diode Transmitter Features z z z z z Laser diode with multi-quantum-well structure Un-cooled operation at -40~+85°C For Single-mode Application High Optical Power High Speed Packaging z 8 Pin Package with ST Port Application

InGaAs Photodiode 1550nm

Abstract: 1550nm laser diode Source laser fiber 1550nm
Contextual Info: P/N: C-15-001A-P-SXXXI/XXX-X-XX Analog 1550nm Laser Diode Module Features z z z z z z z z Laser diode with Multi-quantum-well structure Un-cooled operation at -40 to +85°C Built-in InGaAs monitor photodiode Hermetically sealed active component Complies with Telcordia Technologies GR-468-CORE

Contextual Info: SSM5H16TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications • 1.8-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings

K298

Abstract: K2986
Contextual Info: 2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 80 S (typ.)