20090209B Search Results

19n60

Contextual Info: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

1G25

Contextual Info: LKK 47-06C5 Advanced Technical Information Dual CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS on) max = 45 mΩ Common Source Topology DCB isoated package 4 D1 T1 2 G1 3 S 1 2 3 4 5 T2 1 G2 5 D2 Features MOSFET T1/T2 Symbol Conditions VDSS

Contextual Info: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

Contextual Info: LKK 47-06C5 Advanced Technical Information Dual CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS on) max = 45 mΩ Common Source Topology DCB isoated package 4 D1 T1 2 G1 3 S 1 2 3 4 5 T2 1 G2 5 D2 Features MOSFET T1/T2 Symbol Conditions

19n60

Contextual Info: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

GS54

Contextual Info: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge