20070625A Search Results

20n60c5

Abstract: DSA003709
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)

Contextual Info: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C

DSA003710

Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS

DSA003710

Contextual Info: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C

Contextual Info: Advanced Technical Information Converter - Brake - Inverter Module Fast Trench IGBT MITB10WB1200TMH Single Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 90 A IC25 = 17 A IC25 = 17 A IFSM = 300 A VCE sat = 1.9 V VCE(sat) = 1.9 V

DSA003710

Abstract: MA660
Contextual Info: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 24 A VDSS = 600 V RDS on max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)

Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)

DSA003710

Contextual Info: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions

inverter 12 to 220 100w

Abstract: E72873 MITB10WB1200TMH
Contextual Info: MITB10WB1200TMH Advanced Technical Information Converter - Brake - Inverter Module Fast Trench IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 90 A IC25 = 17 A IC25 = 17 A IFSM = 300 A VCE sat = 1.9 V VCE(sat) = 1.9 V

Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS

Contextual Info: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 24 A VDSS = 600 V RDS on max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)

Contextual Info: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions