2002 DIG. TRANS Search Results

MAC223A8X

Abstract: Triacs equivalent BTA140
Contextual Info: Philips Semiconductors Product specification Triacs MAC223A8X GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triac in a full pack, plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal

igd 001

Contextual Info: CS 20 Phase Control Thyristor VRRM VDRM V V 1200 1400 1600 1200 1400 1600 TO-247 AD Type A Test Conditions IT RMS IT(AV)M TVJ = TVJM Tcase = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 V TVJ = TVJM VR = 0 V C A G G CS 20-12io1 CS 20-14io1 CS 20-16io1 Symbol

CS thyristor

Abstract: igd 001
Contextual Info: CS 30 Phase Control Thyristor VRRM = 1200-1600 V IT RMS = 49 A IT(AV)M = 31 A TO-247 AD VRRM VDRM V V 1200 1400 1600 1200 1400 1600 Type A G Test Conditions IT(RMS) IT(AV)M TVJ = TVJM Tcase = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 V TVJ = TVJM VR = 0 V

2M27

Abstract: gct thyristor HFBR-2528 FGC3500AX-120DS GCU35AB-120 HFBR-1528 GU-E40 IT 8572
Contextual Info: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT RY GCU35AB-120 INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH POWER INVERTER USE PRESS PACK TYPE GCU35AB-120 ● Asymmetrical GCT unit

gct thyristor

Abstract: FGC4000BX-90DS GCU40AB-90 HFBR-1528 HFBR-2528
Contextual Info: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT RY GCU40AB-90 INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH POWER INVERTER USE PRESS PACK TYPE GCU40AB-90 ● Asymmetrical GCT unit

BTA151-650R

Abstract: BTA151 BT145 BT151 650R
Contextual Info: Philips Semiconductors Product specification Thyristors sensitive gate BTA151-650R GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications.

hot electron devices

Abstract: igfet sonos SST superflash Dual-Gate Mosfet electric field permittivity DSASW0037374 superflash sst
Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory Huinan Guan, Member, IEEE, Dana Lee, Member, IEEE, and G. P. Li

hartley oscillator

Abstract: The Modern Armstrong Regenerative Receiver 1GHz vco AR5111 max2115 history of varactor diode modern and radar transmitters 226 varactor hartley sa2400
Contextual Info: SIGNAL GENERATION CIRCUITS WIRELESS, RF, AND CABLE Application Note 1768: Oct 21, 2002 Tracking Advances In VCO Technology Tracks the history of voltage-controlled oscillators VCOs since approximately 1910. Provides examples of VCO integration in RF ICs. Presents technology, performance

Contextual Info: a 23 ns and 65 ns Low Voltage Comparators CMP401/CMP402 FEATURES 23 ns or 65 ns Propagation Delay Single-Supply Operation Compatible with 3 V and 5 V Logic Separate Input and Output Sections Low Power Wide Input Range: –5 V to +3.9 V FUNCTIONAL BLOCK DIAGRAM

BT150

Abstract: BT258 BT258S-800R philips thyristors
Contextual Info: Philips Semiconductors Product specification Thyristors logic level BT258S-800R GENERAL DESCRIPTION Passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These

500R

Abstract: 800R BT145 BT151S
Contextual Info: Philips Semiconductors Product specification Thyristors BT151S series GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling

SSOP14

Abstract: ZMD31020 ZMD31020AB ZMD31020AC ZMD31020AF ZMD31020DK ZMD AG
Contextual Info: ZMD31020 Differential Sensor Signal Conditioner 1. General Description ZMD31020 is a signal conditioner for sensors sensor elements; transducers with differential output signal, e.g. for Wheatstone-bridge-type sensors. The device provides digital correction and compensation of sensor offset,

BTA204

Abstract: 600D 600E 800E BT136
Contextual Info: Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a plastic envelope, intended for use in motor control circuits or with other highly inductive loads. These devices

500R

Abstract: BT145 BT151F
Contextual Info: Philips Semiconductors Product specification Thyristors BT151F series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristor in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling

500R

Abstract: 600R 800R BT150 BT258
Contextual Info: Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced

ma 3810

Abstract: DYMEC 3810 10-TURN 200S Digital Weighing Scale block 203 trim pot
Contextual Info: MODELS 3810, 3811, 3812, 3830, 3831, 3832 A Subsidiary of SILICON TRANSISTOR CORP. 10 MHz Voltage-to-Frequency Frequency-to-Voltage Converter Family Description The 3810 and 3830 Fam ilies are high perform ance, precision 10 MHz fu ll scale Voltage-to-Frequency Con­

Z0103MA

Abstract: transistor z0103 z0103 equivalent z0109ma equivalent Z0103MN Z0107MN transistors z0103 z0109ma Z0103 Z0103NN
Contextual Info: Z0103/07/09 series Triacs Rev. 02 — 12 September 2002 Product data 1. Product profile 1.1 Description Passivated triacs in conventional and surface mounting packages. Intended for use in applications requiring high bidirectional transient and blocking voltage capability.

Contextual Info: Next generation high-speed sigma-delta ADC architectures Rev. 1.0 — 14 March 2012 White paper Document information Info Content Author s Maury Wood – General Manager, High-Speed Converters, NXP Semiconductors; Heribert Geib, Global Application Manager, Wireless

a21sc

Abstract: 7 segment s511 smd a21sc LED 5mm bi-color 3 pin common anode KW5-401asb KW5-401cSB "A21SC" KWL-8011SB Common cathode bi color 2 pin LED 0805 green transistor BC 945
Contextual Info: LED LAMP Part Number LL-XXXX Vf V at IF=20mA Chip Material Emitted Color D (nm) Lens Color Typ Max Iv (mcd) at IF=mA Min Typ Viewing Angle 2 1/2 4.8(.189) 1.0(.039)MAX 0.65 0.5(.02) 26.0(10.24)MIN 2.0(.079) 2mm Tower Typ LED 204HD1F 204ID1F 204GD1F 204YD1F

CVSD modulator/demodulator

Abstract: HC-55564 55564 hc1-55564 CVSD modulator AN576 AN607 TP3040 Voice encryption AN-576
Contextual Info: CT ODU EMENT R P C E t OLET D REPLA Center a OBS E t r D N tsc po MME ical Sup rsil.com/ O C E n e NO R our Tech www.int October 1999 r t o c a cont INTERSIL 1-888 Continuously Variable Slope Delta-Modulator CVSD HC-55564/883 FN3738.1 Features The HC-55564/883 is a half duplex modulator/demodulator

Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs

Contextual Info: 1560 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 59, NO. 6, JUNE 2011 Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs Nicolas G. Constantin, Member, IEEE, Peter J. Zampardi, Senior Member, IEEE, and Mourad N. El-Gamal, Member, IEEE

Contextual Info: ED R E S U ATU C FO E FE SU S I Gary Zhang, Sabah Khesbak, Anil Agarwal, and San Chin T he first official shift in communication systems from fixed-location devices to portable/mobile devices happened in 1973 when Martin Cooper, general manager of Motorola’s Communications Systems Division at the time, placed the first mobile call from a New

60Ghz

Abstract: AN1509 60GHz transistor
Contextual Info: AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR F. Carrara - A. Scuderi - G. Tontodonato - G. Palmisano 1. ABSTRACT The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design,

ulm 2003

Abstract: BERG RS232 mapping CO4011AE-FL 1A01 photo MB90F497 DRP303-3 ULM 1000 CO4011A-FL CO4011SRL-F
Contextual Info: CO4011A-FL Single Chip CANopen Controller for Remote I/O General Description The CO4011 is a low cost, high performance Single Chip solution for CANopen remote I/O modules and especially designed for automotive and industrial applications. The device offers the complex