20017 Search Results

suyin

Abstract: SUYIN 200248
Contextual Info: 2.0mm DUAL ROW ACTIVE EJECT PIN HEADER STRAIGHT TYPE 200170MS Series Mates With SUYIN 200248 Series Specifications: 26-68Circuits : Black High Temp . Plastic Insulator Material Operating Temp.Range Order Information 1 2 3 Terminal Material : Brass 65/35 Plating

20017TS

Contextual Info: 2.00mm 0.079" PITCH CONNECTOR Material I/NO DESCRIPTION TITLE AWG MATERIAL FINISH I TERMINAL 20017TS #24-428 Phosphor Bronze Tin Plated 20017TS Wire-to-Board Crimp Terminal ID Specification I ITEM SPEC Voltage Rating AC/DC 125V Current Rating AC/DC 2A Operating Temperature

20017WS-05A00

Abstract: 20017WS 20017WS-02A00 20017WS-03A00 20017WS-04A00 20017WS-06A00 20017WS-07A00 20017WS-08A00 20017WS02A 20017PS
Contextual Info: DIP 2.00mm 0.079" PITCH CONNECTOR type Material 20017WS Series Wire-to-Board Wafer DIP l/NO DESCRIPTION TITLE 1 HOUSING 20017WS PA66, UL 94V Grade MATERIAL 2 PIN 20017PS Brass & Tin Plated Straight Available Pin i 1 1}— í T , , r1 i i PARTS NO. DIM. A

AU-AIS

Abstract: AU-NDF PM5342-BI PM5342 PM5362 PM5363 PM5365 PM8315 1a8h
Contextual Info: PM5342 SPECTRA-155 PRODUCTION ERRATA PMC-2001737 ISSUE 1 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER ERRATA PM5342 SPECTRA-155 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER REVISION E DEVICE ERRATA ISSUE 1: NOVEMBER 2000 PRODUCTION PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

20224

Contextual Info: ERICSSON ^ PTB 20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it

pa66 - fr connector

Abstract: pa66 - fr pa66 fr connector pa66 - fr pcb pa66 fr 20017PR 20017WR 20017WR-02A00 20017WR-03A00 20017WR-04A00
Contextual Info: DIP 2.00mm 0.079" PITCH CONNECTOR type Material 20017WR Series Wire-to-Board Wafer DIP I/NO DESCRIPTION TITLE 1 HOUSING 20017WR PA66, UL 94V Grade MATERIAL 2 PIN 20017PR Brass & Tin Plated Right Angle Available Pin A B C 2Ü017WR-O2A00 6.0 5.1 2.0 20017WR-03A00

Contextual Info: PM7340 S/UNI-IMA-8 PRELIMINARY INVERSE MULTIPLEXING OVER ATM DATA SHEET PMC-2001723 ISSUE 2 INVERSE MULTIPLEXING OVER ATM PM7340 S/UNI-IMA-8 S/UNI INVERSE MULTIPLEXING FOR ATM, 8 LINKS DATA SHEET PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 2: FEBRUARY 2001

20017

Contextual Info: ERICSSON ^ PTB 20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description KeV Features The 20017 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 860-900 MHz Cellular Radio frequency band. It is rated at 150 Watts

S1242 diode

Abstract: S1242 IRFP250
Contextual Info: Bulletin PD-20017 02/01 S1242 HEXFRED TM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 2 VR = 400V VF typ. ! = 1V IF(AV) = 320A

200175MI

Contextual Info: 2.0mm DUAL ROW TRANSITION PLUG I.D.C.TYPE 200175MI Serie s Mates With SUYIN 1.0mm Pitch Flat Cable Specifications: 8-60Circuits Insulator material : Black High Temp . Plastic Temp. Range Terminal Material : Pho. bronze Plating : Contact-Full Gold Plated Max. Current Rating : 1.5A

SUYIN 200248

Contextual Info: 2.0mm DUAL ROW ACTIVE EJECT PIN HEADER RIGHT ANGLE TYPE 200170MR Series Mates With SUYIN 200248 Series Specifications: 26-68Circuits : Black High Temp . Plastic Insulator Material Operating Temp.Range 2.0 mm Order Information 1 2 3 Terminal Material : Brass 65/35

MLS1579

Abstract: M8ND N16RT26 N14RT13 N16RT26 SC16ML11 N16RT24 M8ND SC16ML1 SC24M1 N20RT29
Contextual Info: BS, C ,200178,002,07 G EN . ST. IN T . ST. 01 10 02 S EC TIO N SEC TIO N 03 11 12 13 14 33 06 34 38 07 39 40 42 08 43 44 SEC TIO N 0D 45 46 50 56 48 60 70 72 73 70 75 80 76 81 REV. 04 05 06 07 90 82 83 84 EE SEC TIO N DATE 08/03/00 06/24/03 09/01/03 22/01/04

E3 multiplex demultiplex

Abstract: telecom bus PM8316 PM8315 TEMUX-84 DS3 multiplex demultiplex
Contextual Info: PM8316 TEMUX-84 PRELIMINARY TECHNICAL OVERVIEW PMC-2001716 ISSUE 1 HIGH DENSITY 84 T1/63 E1 FRAMER WITH INTEGRATED VT/TU MAPPERS AND M13 MULTIPLEXERS PM8316 TEMUX-84 HIGH DENSITY 84 T1/63 E1 FRAMER WITH INTEGRATED VT/TU MAPPERS AND M13 MULTIPLEXERS TECHNICAL OVERVIEW

20017HS-04000

Abstract: 20017HS-14000 20017HS 20017HS-02000 20017HS-03000 20017HS-05000 20017HS-06000 20017HS-07000 20017HS-08000 20017HS-09000
Contextual Info: 2.00mm 0.079" PITCH CONNECTOR Material Wire-to-Board Housing 20017HS Series I/NO DESCRIPTION 1 HOUSING TITLE I MATERIAL 20017HS PBT, UL 94V Grade Available Pin 3.35 PARTS NO. DIM. A DIM. B DIM. C 20017HS-02000 6.0 4.9 2.0 20017HS-03000 8.0 6.9 4.0 20017HS-04000

PLA relay

Abstract: PM7340 tsop 1333
Contextual Info: PM7340 S/UNI-IMA-8 PRELIMINARY INVERSE MULTIPLEXING OVER ATM DATA SHEET PMC-2001723 ISSUE 3 INVERSE MULTIPLEXING OVER ATM PM7340 S/UNI-IMA-8 S/UNI INVERSE MULTIPLEXING FOR ATM, 8 LINKS DATA SHEET PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 3: FEBUARY, 2001

Ericsson RF POWER TRANSISTOR

Contextual Info: ERICSSON ^ PTB 20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor D escription The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it

PTB 20017

Contextual Info: e PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it

Contextual Info: ERICSSON $ RF Power Transistors Product Index IMÉRT Number FREQUENCY MHz POUT W atts 20001 20002 20003 20004 20005 20006 20007 20008 20009 20011 20017 20020 20029 9 1 5 -9 6 0 9 1 5 -9 6 0 9 1 5 -9 6 0 8 6 0 -9 0 0 8 6 0 -9 0 0 8 6 0 -9 0 0 9 3 5 -9 6 0 9 3 5 -9 6 0

44c256

Abstract: 3034C
Contextual Info: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS034C - MAY 1989 - B E V ILO JUNE 1965 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output

200177D

Abstract: AS183-92LF
Contextual Info: DATA SHEET AS183-92/AS183-92LF: 300 kHz-2.5 GHz pHEMT GaAs SPDT Switch Applications • General purpose medium-power switches in telecommunication applications • Transmit/receive switches in 802.11 b/g WLAN Bluetooth systems Features • IP1dB: +30 dBm typical @ 3 V

AS179-92LF

Abstract: AS179-92
Contextual Info: DATA SHEET AS179-92, AS179-92LF: PHEMT GaAs IC SPDT Switch 300 kHz–3 GHz Applications Pin Out General-purpose medium-power switches in telecommunication applications ● T/R switches in 802.11b, g WLAN BluetoothTM systems ● 6 5 V2 CBL 4 3 J2 P1 dB 30 dBm typical @ 3 V

2MN1

Abstract: L126
Contextual Info: CATALOG MICRO SWITCH FED. M F G . CODE 1L S 1- SWITCH “ ENCLOSED a Honeywell Division L I S T I N G L FREE n — €i O P E R A T IN G P O S IT IO N P O S IT IO N O P E R A T IN G P O S IT IO N 91929 O P E R A T IN G H E A D M O U N TS IN A N Y OF FOUR P O S IT IO N S

F1505-01

Abstract: 32364 V031511 Terminal crimping training 32896 DIN 3110
Contextual Info: Professional Insulated Tools Supporting Arc Flash Protection Innovations that work 10,000 Volt Tested 1000 Volt Rated Toll Free: 800 494-6104 2 Arc Flash Protection: Wiha Insulated tools can be a vital component in your Arc Flash protection strategy. What is Arc Flash?

1001-7R

Abstract: EP 950 4320-7R 2540-7R
Contextual Info: P Series 100.195 Watt DC-DC Converters Input voltage up to 150 V DC, surges up to 168 V 1 to 4 isolated outputs 3.3.96 V DC Class I equipment LGA • Extremely slim case 4 TE , fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range