Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    200 AMP CURRENT 1000 VOLT DIODE Search Results

    200 AMP CURRENT 1000 VOLT DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK111G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1.1 to 5.5 V, 3.0 A, Inrush current reducing / Reverse current blocking, WCSP6C Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet

    200 AMP CURRENT 1000 VOLT DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SS5550

    Abstract: ss555 SS5551 SS5554 1N5552 1N5550 1N5551 1N5553 1N5554
    Contextual Info: SS5550/US SS5551/US SS5552/US SS5553/US SS5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5108, REV - HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original
    ss5550/usss5551/usss5552/usss5553/us+10ss5554/us1n55501n55511n55521n55531n5554ss5550ss555ss5551ss5554 PDF

    Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV D JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original
    1n5550/us1n5551/us1n5552/us1n5553/us+61n5554/us1n55501n55511n55521n55531n5554 PDF

    1N5550 JANTX

    Abstract: 1n5551 diode 1N5553US 1N5551 JANTX 1N5551 1N5552 1N5553 1N5554 12 volt-30 amp power diode JANTXV 1N5552
    Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV E JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original
    1n5550/us1n5551/us1n5552/us1n5553/us+121n5554/us1n55501n55511n55521n55531n55541n5550 jantx1n5551 diode1n5553us1n5551 jantx12 volt-30 amp power diodejantxv 1n5552 PDF

    1N5551

    Abstract: 1N5552 1N5553 JANTXV 1N5550 1N5553 1N5554
    Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV F JAN SJ JANTX SX JANTXV SV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original
    1n5550/us1n5551/us1n5552/us1n5553/us+71n5554/us1n55501n55511n55521n55531n55541n5553 jantxv PDF

    SMD Diode S140

    Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
    Contextual Info: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in


    Original
    1812s3801812s2601812s22000e-08+1600e-0700e-0600e-0500e-0400e-0300e-02smd diode s140transistor a 949100 amp current 1300 volt diodediode smd s140jmv1206s450t551250 b 340 smd transistorjmv0603s300t101jmv0805s180t351jmv0402s5r6t301jmv1812 PDF

    100 Amp current 1000 volt diode

    Abstract: 1000 Amp current diode 100 Amp current 500 volt diode 200 Amp current 1000 volt diode MD550 50 Amp current 100 volt diode MDL25800 md356 5701 diode MD358
    Contextual Info: MD/MDL 25000C/A Series - 25 Amp MD/MDL 35000C/A Series - 35 Amp MD/MDL 50000C/A Series - 50 Amp Rectifier Automotive Diode Data Sheet Coloured ring denotes cathode Features Oxide Passivated EPI Die Low Forward Voltage Low Leakage High Temperature Solder Compatible


    Original
    25000c/a35000c/a50000c/amd25050/mdl25050+13md25600/mdl25600md25800/mdl25800scd0729-1100 amp current 1000 volt diode1000 amp current diode100 amp current 500 volt diode200 amp current 1000 volt diodemd55050 amp current 100 volt diodemdl25800md3565701 diodemd358 PDF

    IGBT 50 amp 1000 volt

    Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
    Contextual Info: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode


    Original
    igbt 50 amp 1000 voltcree sic mosfet12 volt 150 amp smps circuit24 volt 10 amp smps+610 amp igbt 1000 volt12 volt 2 amp smps circuitigbt 50 amp 1200 voltcalculation of major igbt operating parameterscpwr-an03igbt junction temperature calculation PDF

    ultrafast igbt

    Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
    Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching


    Original
    of1691200-voltcpwr-an03ultrafast igbt+7igbt 50 amp 1000 voltcalculation of igbt snubbercree sic mosfet12 volt 10 amp smps24 volt 10 amp smpspower diodean-11a PDF

    mur860 diode

    Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
    Contextual Info: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821


    Original
    1n40011n40021n40031n4004+121n40051n40061n40071n49331n49341n4935mur860 diodemr854 dioderectifier diode 20 amp 800 volt50 amp current 512 volt dioderectifier diode 4 amp 600 voltmur1560 data PDF

    MYXDS1200-05ABS

    Abstract: silicon carbide
    Contextual Info: Silicon Carbide Schottky Diode 1200 Volt 5 Amp Hermetic MYXDS1200-05ABS y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 1200V isolation in a small package outline • Higher efficiency • Reduction of heat sink requirements


    Original
    myxds1200-05abso-257silicon carbide PDF

    MYXDS1200-03ABS

    Abstract: silicon carbide
    Contextual Info: Silicon Carbide Schottky Diode 1200 Volt 3 Amp Hermetic MYXDS1200-03ABS y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 1200V isolation in a small package outline • Higher efficiency • Reduction of heat sink requirements


    Original
    myxds1200-03abso-257silicon carbide PDF

    marking CODE 56

    Abstract: marking code pr
    Contextual Info: WILLAS SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ BAT54xxWTHRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE ARRAYS SOT-363 • Batch process design, excellent power dissipation offers


    Original
    ot-363od-123fm120-mbat54xxwthru+7fm1200-mod-123hfm120-mhfm130-mhfm140-mhmarking code 56marking code pr PDF

    Contextual Info: WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE design, excellent power dissipation offers • Batch process


    Original
    ot-23od-123fm120-mbas40x+5fm1200-mod-123hfm120-mhfm130-mhfm140-mh PDF

    MYXDS1200-10ABS

    Abstract: silicon carbide
    Contextual Info: Silicon Carbide Schottky Diode 1200 Volt 10 Amp Hermetic MYXDS1200-10ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency m i l e r P • Reduction of heat sink requirements


    Original
    myxds1200-10abso-257silicon carbide PDF

    200 Amp current 1000 volt diode

    Contextual Info: 25F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 25A ,VF = 1.30 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter


    Original
    00-1200v175oc200 amp current 1000 volt diode PDF

    200 Amp current 1000 volt diode

    Abstract: 16f diode
    Contextual Info: 16F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 16A ,VF = 1.23 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter


    Original
    00-1200v175oc200 amp current 1000 volt diode16f diode PDF

    200 Amp current 1000 volt diode

    Abstract: 60 amp 600 Volt Diode
    Contextual Info: 12F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 12A ,VF = 1.26 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter


    Original
    00-1200v144oc175oc200 amp current 1000 volt diode+160 amp 600 volt diode PDF

    100 Amp current 800 volt diode

    Abstract: 25 Amp 1200 volt diode 200 Amp current 1000 volt diode 206F
    Contextual Info: 6F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 6A ,VF = 1.1 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix "A" for avalanche 400-1200V O Symbol Parameter Repetitive Peak Reverse Voltage


    Original
    00-1200v175oc100 amp current 800 volt diode25 amp 1200 volt diode+2200 amp current 1000 volt diode206f PDF

    schottky diode marking A7 SOD

    Contextual Info: WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original
    ot-323fm120-mhfm130-mhfm140-mh+7fm150-mhfm160-mhfm180-mhfm1100-mhfm1150-mhfm1200-mhschottky diode marking a7 sod PDF

    100 Amp current 1000 volt diode

    Abstract: 60 amp 600 Volt Diode 70HF 70amp diode Diode 1600V To 220 DO-203AB 100 Amp current 800 volt diode
    Contextual Info: 70HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 70Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter 70HF(R) 70HF(R) -10 -20 Symbol 70HF(R) -40 70HF(R) -60 400


    Original
    00-1600v70amp140oc110oc+9-1200v-1600vdo-203ab100 amp current 1000 volt diode60 amp 600 volt diode70hf70amp diodediode 1600v to 220100 amp current 800 volt diode PDF

    IGBT 50 amp 1000 volt

    Abstract: schematic induction heating OM6555SP1 OM6555SP2 OM6556SP1 OM6556SP2 200 Amp current 1000 volt diode
    Contextual Info: OM6555SP1 OM6556SP1 OM6555SP2 OM6556SP2 1000 Volt, 5 To 25 Amp, N-Channel IGBTs With Free Wheeling Diodes In Multi-Chip Packages FEATURES APPLICATIONS • • • • • • • • • Two Or Four IGBTs And Free Wheeling Diodes 2500V Package Isolation Low Turn-Off Switching Losses


    Original
    om6555sp1om6556sp1om6555sp2om6556sp2+4dc340igbt 50 amp 1000 voltschematic induction heating200 amp current 1000 volt diode PDF

    100 Amp current 1000 volt diode

    Abstract: 40HF DO-203AB diode 40amp 1400 volt diode
    Contextual Info: 40HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 40Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter 40HF(R) 40HF(R) -10 -20 Symbol Repetitive Peak Reverse Voltage


    Original
    00-1600v40amp140oc110oc+7-1200v-1600vdo-203ab100 amp current 1000 volt diode40hfdiode 40amp1400 volt diode PDF

    Contextual Info: WILLAS FM120-M+ THRU BAV70DW FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline SWITCHING DIODE Features • Batch process design, excellent power dissipation offers


    Original
    ot-363od-123fm120-mhfm130-mh+6fm140-mhfm150-mhfm160-mhfm180-mhfm1100-mhfm1150-mh PDF

    IT13500

    Abstract: 85HF DIODE 1400 VRRM DO-203AB 200 Amp current 1000 volt diode 1400 volt diode
    Contextual Info: 85HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 85Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter Symbol Repetitive Peak Reverse Voltage VRRM Maximum Average On-State Current


    Original
    00-1600v85amp-1200v-1600v+6do-203abit1350085hfdiode 1400 vrrm200 amp current 1000 volt diode1400 volt diode PDF