|
200G1L
|
|
Anderson Power Products
|
PP15/45#10/14 CONTACT LOW DETENT |
Original |
PDF
|
1.62MB |
|
|
200G1L-LPBK
|
|
Anderson Power Products
|
LOOSE PC 45A CONTACTSUPERFLEX LO |
Original |
PDF
|
1.62MB |
|
|
200G3L
|
|
Anderson Power Products
|
PP15/45 #10/14 CONTACT LOW DETEN |
Original |
PDF
|
503.46KB |
|
|
200G3L-LPBK
|
|
Anderson Power Products
|
PP15/45 #10/14 CONTACT LOW DETEN |
Original |
PDF
|
503.46KB |
|
|
200-GAR
|
|
Visual Communications Company
|
Optoelectronics - LED Indication - Discrete - LED TH T-1 3/4 5MM GREEN/AMBER/R |
Original |
PDF
|
98.02KB |
|
|
200GB60DLC
|
|
Eupec
|
Technicshe Information |
Original |
PDF
|
106.72KB |
8 |
|
200-GLP
|
|
Visual Communications Company
|
Optoelectronics - LED Indication - Discrete - LED TH T-1 3/4 5MM 50DEG 565NM G |
Original |
PDF
|
98.02KB |
|
|
200GX
|
|
Greenlee Communications
|
Test and Measurement - Equipment - Specialty - AMPLIFIER IND 200GX |
Original |
PDF
|
767.69KB |
|
|
200GX
|
|
Tempo Research
|
Equipment - Specialty, Test and Measurement, AMPLIFIER IND 200GX |
Original |
PDF
|
|
2 |
MBR2040GT Thru MBR20200GT
|
|
CREATEK Microelectronics
|
Schottky barrier rectifier diode in TO-263W package with high surge and current capability, low forward voltage drop, suitable for low voltage, high frequency inverters, freewheeling, and polarity protection applications. |
Original |
PDF
|
|
|
|
K2200G
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Bidirectional silicon switch with high power handling, available in KxxxxG series, featuring breakover voltages from 80V to 270V, on-state current up to 1A, and surge current tolerance of 16.7A peak, suitable for high-voltage ignition and protection applications. |
Original |
PDF
|
|
|
|
MBR4040GT Thru MBR40200GT
|
|
CREATEK Microelectronics
|
Schottky Barrier Rectifier Diode in TO-263W package, MBR4040GT to MBR40200GT series, with forward current up to 40 A, reverse voltage from 40 V to 200 V, low forward voltage drop, high surge capability, and operating junction temperature up to 175 °C. |
Original |
PDF
|
|
|
|
K1200G
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Bidirectional silicon switch with high power handling, available in KxxxxG series, featuring breakover voltages from 80V to 270V, on-state current up to 1A, and surge current tolerance of 16.7A peak, suitable for high-voltage ignition and protection applications. |
Original |
PDF
|
|
|
|
CA-IS1200G
|
|
ChipAnalog
|
CA‐IS1200用于电流检测的隔离式运放 |
Original |
PDF
|
|
|
|
|
|
K1200G
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon bilateral voltage triggered device in DO-15 package with peak off-state voltage from 70 to 220 V, on-state RMS current of 1 A, and surge capability up to 16.7 A non-repetitive one cycle peak at 50 Hz. |
Original |
PDF
|
|
|
|
K2200G
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon bilateral voltage triggered device in DO-15 package, with peak off-state voltage from 70 to 220 V, non-repetitive surge current up to 16.7 A, and operating junction temperature from -40 to +125 °C. |
Original |
PDF
|
|
|
MBR2040GT Thru MBR20200GT
