2 W RF 150-200 MHZ Search Results

TM09-1

Contextual Info: RF Transformers W 12,5 to 1800 Q ideband 4 kHz to 8 0 0 MHz Style X65 Standard W38 T, TH, TT Q RATIO FREQUENCY M Hz INSERTION LOSS# CARD DATA 2 dB M Hz 1 dB M Hz 2 2.5 3 .05-200 .015-300 07-200 01-100 05-250 .05-200 .015-300 .07-200 .01-100 .05-200 .08-150

wia 102

Abstract: 5866 triode tb2.5/300 tb2.5 2X40 2x208
Contextual Info: T B 2.5 /3 0 0 5866 J _ v RF P O W E R TRIODE QUICK REFERENCE D ATA m F re q . (M H z) 4 75 2 150 1 .5 200 C te le g r. Va (V) W0 (W) 2500 2000 1500 1000 390 295 210 126 B te le p h . C o sc. Va (V) 2500 2000 2000 w0 (W) C a m od. W0 (W)

Contextual Info: S G S -T H O M S O N S D 1 5 3 8 -0 2 m RF & M I C R O W A V E T R A N S I S T O R S A V IO N IC S A P P L IC A T IO N S DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz

527 MOSFET TRANSISTOR motorola

Abstract: vk200* FERROXCUBE MRF134 SELF vk200 Beckman resistor network mrf134 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF134 . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

MRF174

Abstract: "RF MOSFETs" 1N5925A AN211A AN721 RF MOSFETs motorola bipolar transistor data manual
Contextual Info: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.

"RF MOSFETs"

Abstract: motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174
Contextual Info: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.

RF POWER VERTICAL MOSFET 1000 w

Abstract: J50 mosfet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

J50 mosfet

Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

MRF134

Abstract: transistor motorola 359 zener motorola 1N5925A AN215A AN721 alc 266
Contextual Info: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

Triode 805

Abstract: MRF134 zener motorola 1N5925A AN215A AN721
Contextual Info: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.

j764

Contextual Info: MOTOROLA Order this document by MRF137/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF137 N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

transistor motorola 359

Abstract: Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134
Contextual Info: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.

Q 817

Abstract: Triode 805 zener motorola 1N5925A AN211A AN215A AN721 MRF137 J302 fet arco 406
Contextual Info: MOTOROLA Order this document by MRF137/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF137 N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

Contextual Info: MOTOROLA Order this document by MRF171/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF171 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.

motorola bipolar transistor data manual

Abstract: AN721 motorola an721 application zener motorola 1N5925A AN211A AN215A MRF137 J302 fet
Contextual Info: MOTOROLA Order this document by MRF137/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF137 N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

VK200-19/4B

Abstract: 5Bp power control motorola rf power MRF314 "30 mhz" driver Amplifier motorola rf device data book vk200 coil VK200 J121 power unit
Contextual Info: MOTOROLA Order this document by MRF314/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF314 . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

MRF136

Abstract: zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

vk200 coil

Abstract: MICA 06 MRF316 VK200 MOTOROLA 381 equivalent
Contextual Info: MOTOROLA Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF316 . . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

6a3 diode zener

Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

MW6IC1940NB

Abstract: A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J1213
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

mrf3163

Contextual Info: MOTOROLA Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor MRF316 . . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

MW6IC1940NB

Abstract: A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N - 2 Rev. 4, 3/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage

1n4740 MOTOROLA

Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
Contextual Info: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.