2 SA 673 SEMICONDUCTOR Search Results

PMBFJ111

Abstract: PMBFJ112 PMBFJ113 Silicon Junction FETs Scans-00472
Contextual Info: b b S B ' m 0024052 TÔT * A P X Philips Semiconductors PMBFJ111/PMBFJ112/ PMBFJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE PINNING - SOT23 PIN CONFIGURATION FEATURES b?E 1> DESCRIPTION

SG3524AN

Abstract: an170 philips TCA280 NE 555 timer TDA1543A MC 1310 stereo decoder fsk generator using timer 555 LM 272 dual op amp NE5080 application tda1541
Contextual Info: Philips Semiconductors Functional Index General-Purpose/Linear ICs Preface. Section 1 General Information .

Contextual Info: BR2505 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD. BR2510 T E C H N IC A L S P E C IF IC A T IO N S O F S IN G L E -P H A S E S IL IC O N B R ID G E R E C T IF IE R VOLTAGE RANGE - 5 0 to 1000 Volts CURRENT - 25 Amperes FEATURES

TSM 1416

Abstract: TRANSISTOR C 3068 C2580 BFG16A ts 4141 TRANSISTOR TRANSISTOR D 1691
Contextual Info: b t .S a ' ìa i Philips Semiconductors 0024774 _ T i b • APX Product specification NPN 2 GHz wideband transistor BFG16A N APIER P H I L I P S / D I S C R E T E FEATURES b?E D PINNING • High power gain PIN DESCRIPTION • Good thermal stability

572B-T160L

Abstract: B2329 ABB B45 BB342
Contextual Info: MLX75411, MLX75412 Avocet HDR Image Sensors Datasheet Application Examples Features and Benefits 1 1 1 1 1 1 1 1 1 1 1 Automotive Driver Assistance Systems ADAS 1 Lane departure warning (LDW) 1 Forward collision warning (FCW) 1 Automatic high-beam assist

4910E

Abstract: MGF4914E MGF4918E
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series SUPER LOW NOISE InGaAs H E M T j DESCRIPTION The M G F4910E OUTLINE DRAWING series su per-lo w -n oise HEMT U n it m illim e te rs inches (High Electron M o bility Transistor) is designed fo r use in X to

PMBFJ111

Contextual Info: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23

CY7C167

Abstract: CY7C167-25DC i781 7C167
Contextual Info: CYPRESS SE MI CONDUCT OR 250^2 MfciE D oodbM^ i acYP CY7CX67 CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected CMOS for optimum speed/power High speed • — 25 ns Low active power — 275 mW Low standby power — 83 m ff

1999Volts

Contextual Info: * PHILIPS E C G INC ECG Semiconductors 17E • ECG2052 CM OS 3Vz Digit DVM with Multiplexed 7-Segment Output Features • Operates from single 5 V supply

MTD7N20

Abstract: jw 521
Contextual Info: MOTOROLA SC XSTRS/R F EbE D b3b?5S4 GQIGISO 2 Order this data sheet by MTD7N20/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet MTD7N20 P o w e r Field E ffe c t T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S

LF386

Abstract: lf396 100 6n capacitor lf296 LF396A LF198 LF198A LF298 LF398 LF398A
Contextual Info: THOMSON SEMICONDUCTORS LF198, LF198A LF298 LF398, LF398A J-FET SAM PLE A N D HOLD CIRCUITS T h e LF198, LF298, L F 3 9 8 a re m o n o lith ic sa m p le a n d h o ld c irc u its w h ic h u tilize J -F E T te c h n o lo g y to o b ta in ultra h igh d c a ccuracy w ith fa s t a c q u isitio n o f signal

U0100

Contextual Info: 4bE D • b 7 2 M 2 4 Q D D 1 G D 2 M 124 H O K I J O K I S E M I C O N D U C T O R GR OU P O K I semiconductor 7 MSM28C64A_ T - y ^ / i 8K x 8 BIT C M O S ELEC TR ICA LLY ERA SA B LE & P R O G R A M A B LE ROM G EN ER A L DESCRIPTION The MSM28C64ARS is a CMOS electrically erasable and programmable read only memory

MCE Semiconductor

Contextual Info: KS82C88A MICROPROCESSOR BUS CONTROLLER FEATURES/BENEFITS DESCRIPTION • Pin and functional compatibility with the Industry standard 8288 The KS82C88A Bus Controller is a 20-pin CMOS compo­ nent which includes command and control timing generation as well as a bipolar bus drive capability while

2ss9014

Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
Contextual Info: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013

Contextual Info: 6A Adjustable, and Fixed 33V and 5V Linear Regulators D e scrip tio n The CS5206 -X series of linear regu­ lators provides 6A at adjustable and fixed voltages of 3.3V and 5V with an accuracy of ±1% and ±2% respectively. The adjustable version uses tw o external resistors to set

Contextual Info: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.

ic08k

Abstract: LTC1417 serial and parallel Analog to digital converter LTC1096 LTC1096L LTC1098 LTC1098L LTC1099 LTC1196 LTC1198
Contextual Info: Data Conversion InfoCard 8 Analog-to-Digital Converters Analog-to-Digital Converters Parallel Serial Single 8-Bit LTC1096 5V, Micropower, SO-8 LTC1096L 3V, Micropower, SO-8 LTC1196 3V to 5V, 1Msps, SO-8 10-Bit LTC1092 5V, 38ksps LTC1197 5V, 500ksps, SO-8 LTC1197L 3V, 250ksps, MSOP

T2D 96 diode

Abstract: SAA7350GP philips saa7350gp SAA7350 T2D DIODE T2D DIODE 49 T2D 98 DIODE T2D 65 DIODE T2D DIODE 42 T2D DIODE 96
Contextual Info: P h ilip s S e m ic o n d u c to rs P re lim in a ry S p e c ific a tio n 20-bit input bitstream conversion DAC for digital audio systems SAA7350 FEATURES • Up to 20-bit input • Variety of interface form ats Japanese and l2S • Choice of two system clock

Lo 3.3V

Contextual Info: Philips S em iconductors P relim inary specification 9-bit D-type flip-flop with 5-volt tolerant inputs/outputs; positive-edge trigger 3-State 74LVC823A FEATURES DESCRIPTION • 5-volt tolerant inputs/outputs, for interfacing with 5-volt logic The 74LVC823A is a high performance, low-power, low-voltage

SAA7350

Abstract: SAA7350GP SAA1350 philips saa7350gp A17A CAA79 TDA1547 SD12
Contextual Info: philips Semiconductors Preliminary Specification 20-bit input bitstream conversion PAC for digitai audio systems SAA7350 FEATURES • Up to 20-bit input • Variety of interface formats Japanese and l2S • Choice of two system clock frequencies • Sampling frequency from 16 kHz

sla 4051

Abstract: Philips PCF8833 mv silicon c320 sla 4052 140668 601330 C3657 intel 8951 MX C339 Philips ID33
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8833 STN RGB - 132 x 132 × 3 driver Objective specification 2003 Feb 14 Philips Semiconductors Objective specification STN RGB - 132 × 132 × 3 driver PCF8833 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION

HCTS393DMSR

Abstract: HCTS393HMSR HCTS393KMSR HCTS393MS
Contextual Info: HCTS393MS Radiation Hardened Dual 4-Stage Binary Counter August 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

HCTS393D

Abstract: HCTS393HMSR HCTS393KMSR HCTS393MS HCTS393DMSR
Contextual Info: HCTS393MS Radiation Hardened Dual 4-Stage Binary Counter August 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

OS 470 88, VARISTOR

Abstract: 3500 2231 tz 1290 2SD 388 A diode B4E 1961 su 3gt57 MZ11 selenium rectifier uaa 1300
Contextual Info: EDAL INDUSTRIES INC b4E D 3 C H 5 7 :Lb 0 0 0 D 3 4 7 EDAL TT3 IEDL Metal Oxide Varistors M O V Transient Voltage Suppressors isdSÂlis&îàîBSW'-'-; •váasa*. • Descri pti o n/Featu res Selection Procedure Metal Oxide Varistors and Transient Voltage Suppressors having a non-linear currentvoltage characteristic which sustains an almost