2 PIN IR DIODE Search Results

Contextual Info: IR M3401/3402/3405 SIEMENS INFRARED DATA TRANSCEIVER Prelim inary IR M 3401/3402 Pin Functions Pin no. Function Pin no. Function Pin no. Function 1 LED Anode 4 Receive 7 N/C 2 LED Cathode 5 SD/MS 8 GND 3 Transm it 6 VCC IRM3405 Pin Functions IRM3401 Pin no.

Contextual Info: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low IR IR=70nA Typ. • High reliability 1 Cathode 2 Anode 2 1 S9 Top View Marking Code: "S9"

RB500V-40

Contextual Info: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low IR IR=70nA Typ. • High reliability 1 Cathode 2 Anode 2 1 S9 Top View Marking Code: "S9"

RB500V-40

Abstract: IR-70
Contextual Info: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low IR IR=70nA Typ. • High reliability 1 Cathode 2 Anode 2 1 S9 Top View Marking Code: "S9"

ir2c24n

Contextual Info: 6-Unit 320mA Transistor Array IR2C24/IR2C24N IR2C24/IR2C24N • Description ■ T h e IR 2 C 2 4 /IR 2 C 2 4 N is a 6 -c irc u it d river IC which can be used for driving printer, relays, L ED s and lamps. T he strobe pin enables all circuits to cut off without external transistors.

byv16-200t

Abstract: common anode diode TO-220 mur1660 datasheet "Power Diode" BB204 BAY84 MUR1660 dpak DIODE ANODE COMMON MUR304OPT 2965C
Contextual Info: DISCRETE SEMICONDUCTOR Diode Arrays •Switching Diode Arrays Part Pin to Pin Compatibility Vr max, V If max, mA Vf, V Trr, ns Ir, µA Number of elements 100 0.1 2 5.0 2 КД629АС9 BAY84 90 200 1.0 КД704АС9 BAV70 70 100 1.3 6.0 Circuit Two serial connected

DIODE 5C

Abstract: FMMD7000 partmarking 5 C TRR15 DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR SERIES FMMD7000 FMMD7000 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL – 5C 2 1 3 3 1 2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Breakdown Voltage Voltage (IR=100µ A)

Contextual Info: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION 2 ANODE CATHODE ILECTRICAL CHARACTERISTICS at Tamb=25°C SYMBOL PARAMETER MIN TYP MAX 30 UNIT Reverse Breakdown Voltage Vr Reverse Voltage Leakage Ir Case Capacitance

MA47200

Contextual Info: y if m r sr c M aann A M P cI o m p a n y •IV iU-r t* •. Stripline PIN Diode Switch Modules 'J n l a * - L ., MA47200 Series •-r-2-15 *-rî-v —Ü - - — 5 ^ f r ^ ir V 2.ro ir . Features P I • Broadband 5U d im Designs 'Iluough X Band • Circuit'Characterized

IM258

Abstract: 104M50V 2088 RGB-5
Contextual Info: mk C ir c u it D e s c r ip t io n - .A Pin Descriptions pin Name MO CVBS/B O Pin# Description 2 Composite video with blanking and sync, or Blue. 4 Composite video with blanking and sync, or Green.

marking M5N

Abstract: MA3XD15 M5-N
Contextual Info: Diodes SMD Type Schottky Barrier Diodes MA3XD15 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Mini type 3-pin package Low VF or Low IR type: VF < 0.45 V, IR < 100 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A +0.05 0.1-0.01 0-0.1

Contextual Info: C ir c u it D e s c r ip t io n Pin Descriptions This chapter begins with a table describing each pin and its function Table 1 , fol­ lowed by a pinout diagram (Figure 1) and a detailed functional block diagram (Figure 2). Table 1. Pin Descriptions (1 of 2)

Contextual Info: 4 -U n it 400m A Transistor Array IR2C26 • IR 2C26 4-Unit 400mA Transistor Array Pin Connections Description The IR 2 C 2 6 is a 4 -circuit d rive r IC, which con­ sists of an input in verter and a current source type output section. The output section is composed of a

FMMD6050

Abstract: FMMD7000 partmarking 5 C DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE FMMD6050 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION  PARTMARKING DETAIL – 5A 2 1 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Breakdown Voltage Voltage IR=100µ A V(BR) 70 V Peak Forward Current

"MARKING CODE S9"

Abstract: RB500V-40
Contextual Info: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low IR • High reliability PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • Low current rectification S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol

"MARKING CODE S9"

Abstract: RB500V-40
Contextual Info: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low IR • High reliability PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • Low current rectification S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol

CHELTON

Abstract: microwave diode ratings DFN et_
Contextual Info: Silicon PIN diode: DH85100-91S MAXIMUM RATINGS Operating temperature Tj : Storage temperature range: - 55°C, + 125°C - 55°C, + 150°C ELECTRICAL CHARACTERISTICS* @ TA = +25°C Test condition Parameter Breakdown Voltage (1-3) & (2-3) VBR IR = 10 µA Min

Contextual Info: C ir c u it D e s c r ip t io n Pin Descriptions Pin names, input/output assignments, numbers, and descriptions are listed in Table 1. Figure 1 illustrates the Bt864A/865A pinout diagram, and Figure 2 details the block diagram. Table 1. Pin Assignm ents 1 o f 3

marking 2S

Contextual Info: MA111 Schottky Barrier Diodes SBD MA10704 Silicon epitaxial planer type Unit : mm For high-frequency rectification 200mA rectification possible ● Low IR (reverse current) type. (About 1/10 of ordinary product) 0.3 ● IF(AV)= 0.5±0.1 type package (2-pin)

diode sv 03

Abstract: 1SS388
Contextual Info: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (typ.) 2 Anode 2 1 SV Top View Marking Code: "SV" Simplified outline SOD-523 and symbol

diode sv 03

Abstract: 1SS388
Contextual Info: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (typ.) 2 Anode 2 1 SV Top View Marking Code: "SV" Simplified outline SOD-523 and symbol

1SS369

Contextual Info: 1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (MAX.) 2 Anode 2 1 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol

marking code SU

Abstract: 1SS369
Contextual Info: 1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (MAX.) 2 Anode 2 1 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol

tsal

Contextual Info: TSOP15.TB1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Features 1 2 94 8692 3 es ig The TSOP15.TB1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy