2 N2369 Search Results

2N2369A

Contextual Info: 3QE D • TTS'ìSB? 0031125 b F i SCS-THOMSON EtŒÛÏÏIHMDÛS T - 3S-o°i 2 N2369A S G S-THOMSON HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed spe­ cifically for high-speed saturated switching applica­

Contextual Info: 30E » • TIETSB? 0031123 e - °| ' / I T SGS-THOMSON ^ 7# s L i O T ( s « S 2 N 2 3 6 9 S G S-THOMSON HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN trans­ istor in Jedec TO-18 metal case. It is designed spe­

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

n2369

Abstract: NPN Transistor TO92 40V 200mA 1902 transistor BTN2369A3 C229A3 2 N2369
Contextual Info: CYStech Electronics Corp. Spec. No. : C229A3 Issued Date : 2004.08.09 Revised Date : Page No. : 1/3 High Frequency NPN Switching Transistor BTN2369A3 Description • High transition frequency, fT=500MHz min • High current, IC(max)=200mA • Low saturation voltage, VCE(SAT)=0.3V(max)

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK