2 F TRANSISTOR Search Results

Contextual Info: UNITRODE CORP T 2 9347963 D F | ^ 3 4 7 c] b 3 U N I T R O D E CORP 92D 10624 POWER MOSFET TRANSISTORS D G lG b S M D U F N 2 2 0 U F N 2 2 1 200 Volt, 0.8 Ohm N-Channel U F N 2 2 2 U F N 2 2 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

Contextual Info: 101 Surface Mount Devices High Voltage Transistors Ratings Type Package v CEO V v CBO V typ MHz Pinout See Section VII 3 0 /5 3 0 /5 3 0 /5 5 0 /5 60 60 60 100 AE R F F 10/1 200 F 5 0 /5 10/1 2 0 /2 2 0 /2 100 F 200 50 50 F F R 3 0 /5 60 AE 3 0 /5 3 0 /5 2 0 /2

D0217

Abstract: IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 pj62 IRF620 IRF621
Contextual Info: 3GE » • 7^23? 002=1703 1 ■ ' T v3P|- [ S G S -T H O M S O N * 7 # [ * œ Œ ( g r a [ i * § r= IR F 6 2 0 / F I - 6 2 1 /F I IR F 6 2 2 / F I - 6 2 3 /F I Z S G S-thomJoF TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS 200 V 200 V ^DS(on

transistor B 722

Abstract: Q 720 To220 Application of irf 720 720F transistor 721 ld 18 IRF722FI ld 33 G-722
Contextual Info: rZ Z IR F 7 2 0 / F I - 7 2 1 /F I i r f 7 2 2 /F I- 7 2 3 /F I S G S -T H O M S O N * • 7 #» M E M iiie r a M o e s N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF720 IRF720FI VDSs 400 V 400 V RoS on 1.8 ß 1.8 fi 'o ‘ 3.3 A 2.5 A IRF721

irf 3905

Abstract: pj 0266 TC-6059 IRF 5350 TC-605 IRF 544 T108 transistor sms 2t lj11 irf 346
Contextual Info: NEC i ï r i \ ^ — 5 f ♦ h Compound Transistor f x FN 1F4Z $ f t O ' M 7 x £i £ | * J / E L T v ^ î ë 1 - c 2 . 8 ± 0 .2 R i= 2 2 1.5 kQ 0 . 65 io.i 5 O F A 1 F 4 Z t =? > 7 ° ' ) S > - 9 ') T fê ( T a Il = 2 5 °C ) g 3 u ? j W& Æ ^ t& # \tL

2SC4326LK

Abstract: J100 T146 T147
Contextual Info: 2SC4326LK h "7 > v J* £ /Transistors 2 S C 4 3 2 6 L K Epitaxial Planar NPN Silicon Transistor RF 7. -f y Switch Usage • W ërJ’JÎBI/Dim ensions Unit : mm 2) 3) R F i V 2 P - i > ¥ « R F ^ - f y ^ f f l t 0.B±0.1 L T £ S „ a T«m • Features

transistor MWTA 06

Abstract: transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580
Contextual Info: 7 * — • S 5 /— H Mos M O S Field Effect Transistor 2 P 2 S J 202 ü ^ ' y f ' J M O S * m o s Ì ' ò £ ' ^ W g n t i « f F E T F E T % € J ± f ë € i t ë 2 {@ i m & T m m x - è , m W l? ~ ?<F> P 4 V T R : ì ' ' f 2 tb , è & g t t z > & %

a935

Abstract: 2sk2136 V01J 2SK2136-Z MP-25 MP-25Z T0220AB
Contextual Info: M O S J fê S fM â */ N°7 - MOS MOS Field Effect Power Transistors 2 S K 2 1 3 6 . 2 S K 2 1 3 6 FET * -T -y * > 2SK2136, 2 S K 2 1 3 6 - Z U N ^ * * J U « £ f f ^ 7 - M O S F E T T 2SK2136 * > 7 * Ä * > D C - D C 3 > /< - - * lC Ä f iT T o COI o 10.6_MAX- ^ 3.6 ± 0.2 « M A X .

Contextual Info: h T7 > V $ /Transistors FMW8 F IU IW A r m w NPN o '>U =l > h7>vX$ ftjgjftilM gffl/R F Amplifier Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor 2 fico h 7 > V 7 7 f t ' X y f 5 7 $ □E 1.9 t o .2 ,0.95^ . p.95t > T l£ £ B £ f t T L '- 5 „ 2 2 C0 h 7 > > X

2SC5322FT

Contextual Info: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2l e|2 = 10 dB (f = 2 GHz) MAXIMUM RATINGS ÍTa = 25°CÌ

2SC5321

Abstract: VHF-UHF Band Low Noise Amplifier
Contextual Info: 2SC5321 TOSHIBA 2SC5321 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2le|2 = 10 dB (f = 2 GHz) 2.1 ¿ 0.1 1.25Ì0 .1

2SC5321

Contextual Info: 2SC5321 TO SH IBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2le|2 = 10 dB (f = 2 GHz) 2.1 ¿ 0.1 1.25Ì0 .1

Semikron SKR 21

Abstract: semikron skn 50/04 semikron skr 50/08 SKN 21 semikron skn 50/04 SKR 50 diode skn 21 diode skn 50/10 Semikron SKR 40 /12
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 °C) 50 A (95 °C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF

Contextual Info: FREDERICK COMPONENTS V C POW ER M O SF E T s VD S I D 25TC 1 0 0 °C Rd A (V ) s W ) C IS S td m *D (o h m s) (P F ) (A ) (W ) P ackage IR F 1 2 0 IR F 1 2 2 IR F 1 2 3 IR F 1 3 0 IR F 1 3 1 IR F 1 3 2 IR F 1 3 3 IR F 1 4 0 IR F 1 4 1 IR F 1 4 2 IR F 1 4 3

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

2SD1562

Contextual Info: h 7 > V X £ / T ransistors 2SD1562 1 r a j f r t f f i ? ' i> 5 2SD1562 NPN '>'J h Epitaxial Planar NPN Silicon Transistor -i&Jü$1I:frii |liiffl/L o w Freq. Power Amp. o 4.5 £ 0 . 2 B VC EO =120V ¿3.6 + 0 2 i f ia < , C J f, 2) S O A A ' ' j £ t ' 0

Contextual Info: TIP41F; 41AF TIP41BF; 41CF SILICON EPITAXIAL POWER TRAN SISTO RS N PN silicon epitaxial power transistors, each in a S O T 186 envelope with an electrically insulated mounting base. PN P complements are T IP 4 2 F , T IP 4 2 A F , T IP 4 2 B F and T IP42C F.

Contextual Info: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v mm V H F- U H F BAND LOW NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain : N F = 1 .4 d B f= 2 G H z : |S2 1 e l2~ 1 2 d B ( f — 2 G H z ) M A X IM U M RATINGS (Ta = 25°C)

LA 7873

Abstract: TC787 tf 044 2SD2230 G262G M098 LLAM
Contextual Info: Silicon Transistor 2SD2230 2SD2230 Ü, L t M ' É f f lt L T j i a «F ft LfzMT T t . VcE sat L t, X r w i , W f i - f - f > 7 B 0 ( T O : mm) 2 .8 ± 0 .2 o .65i?:i 1.5 T ' t c o f f i VcE(sat) -C'tO VcE(sat)i = 33 mV TYP. Ic = 100 mA, IB= 10mA VcE(sat)2 = 1 5 0 mV T Y P .

EB-230

Abstract: PA603T mpa603t 048164 IC830
Contextual Info: MOS MWRlto MOS Field Effect Transistor «PA603T U MOS F E T 6 fc> 2 0 S&) P ¿¿PA603T (ä, M OS F E T £ 2 H Jj& f ijl Ltz l ~ £ f 7f £ H I (^ -fï ‘ mm) & 4# o SC-59 ¿[p] L'+f'f Xcos'?"/ Y — 'si MOS F E T £ 2 H i& f lji 0.95 o ¿/PA602T t 3 > 7 ° ij / 's 9 ') T"i£ffl^Tit£

B F2g

Contextual Info: TOSHIBA 2SC5317F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 3 <;c 5 3 1 7 F W V W • » ■ V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series Low Noise Figure :N F = 1 .3 d B (f=2G H z) H igh Gain :|S 2 l e|2= 9dB (f=2G H z)

2SK872

Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss

2SC5089

Contextual Info: TO SH IBA 2SC5089 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5089 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • + 0.5 2 .5 -0 .3 + 0.25 Low Noise Figure, High Gain. N F = l.ld B , |S 2 lel 2= 13dB f=lGHz k1-5-°-15>i MAXIMUM RATINGS (Ta = 25°C)

2sc5463

Contextual Info: T O SH IB A 2SC5463 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 54 63 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ld B , |S 2 ie l 2 = 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC