2 F TRANSISTOR Search Results

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

2sc5463

Contextual Info: T O SH IB A 2SC5463 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 54 63 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ld B , |S 2 ie l 2 = 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SHIBA MT4S06U TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S06U VH F—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz High Gain : |S2le|2 = H-5 dB (VCE = 3V, IC = 7mA, f = 2 GHz)

2sc5464

Contextual Info: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: MTD2005 • f ö M / Features • S fS f a • • IHKStSS • Constant-Current Chopping Function (Fixed Frequency) 2 Ì I A * ( 1 - 2 f f lM 8 [ ± E N A £ # f f l) • 2-Phase Input (H alf Step Drive Uses ENA Together) ■ i t S S ' E — K tjJ J iH f # !

LT 7706

Abstract: LT 7207
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: MTD2006F • f ö M / Features • S fS f a • • IHKStSS • Constant-Current Chopping Function (Fixed Frequency) 2 Ì I A * ( 1 - 2 f f lM 8 [ ± E N A £ # f f l) • 2-Phase Input (H alf Step Drive Uses ENA Together) ■ i t S S ' E — K tjJ J iH f# ! ( y ’ - i •? P X ^ - y T ’lEKSifcrO

RH1034-1.2

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low noise • N F = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • N F = 1 .3 dB ty p

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

MTD2006

Abstract: LC08A marking
Contextual Info: MTD2006 • f ö M / Features • S fS f a • • IHKStSS • Constant-Current Chopping Function (Fixed Frequency) 2 Ì I A * ( 1 - 2 f f lM 8 [ ± E N A £ # f f l) • 2-Phase Input (H alf Step Drive Uses ENA Together) ■ i t S S ' E — K tjJ J iH f# ! ( y ’ - i •? P X ^ - y T ’lEKSifcrO

transistor marking 1p Z

Contextual Info: TOSHIBA 2SC5098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5098 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • U nit in mm 2.1 ± 0.1 Low Noise Figure, High Gain. • . 1.25 ±0.1 N F = 1.8dB, |S 2 1 e|2 = 10dB f=2G Hz n 4 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: MT3S35FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S35FS VCO Oscillator Stage UHF Low-Noise Amplifier Application • Low Noise Figure: NF = 1.4 dB @ f = 2 GHz • High Gain: |S21e|2 = 13.0 dB (@ f = 2 GHz) 0.6±0.05 1.0±0.05 0.2±0.05 Features

hfe 4538

Abstract: IC 7448 IC 7432 pin configuration ic 7448 UPA827TF ic LC 7815 pin configuration of ic 7448 pin configuration NPN transistor 9013 npn pin configuration of 7496 IC C 4804 transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: |S21E|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA

NE686

Abstract: NE698M01 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE698M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 17 GHz TYP at 2 V, 7 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA • HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz

transistor zo 607

Abstract: 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

2SC4394

Contextual Info: TO SH IBA 2SC4394 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4394 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Cain. • N F = l.ld B , |S2 ie l 2—lld B f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: T O SH IB A 2SC5088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5088 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN EPITAXIAL PLANAR TYPE DESCRIPTION O UTLINE DRAWING 2 S C 2 6 2 9 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X

NEC 2933

Abstract: 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5183R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

Contextual Info: T O SH IB A 2SC4842 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4842 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = l.ld B , |S U nit in mm 2 . 1.1 0 .1 1.2 5 ± 0.1 2 l e l 2 = 14dB f = 1GHz □ MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF TO-92 High fT=5GHz 2 NF=1.5dB, S21e = 16dB f=500MHz 2 NF=1.7dB, S21e = 10.5dB (f=1000MHz) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: T O SH IB A 2SC5066 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 12dB f=lG H z Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA 2SC5064 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5064 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 2.5-0.3 • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 12dB f=lG H z + 0.25 .1 .5 -0 .1 5 .

2SC5227

Abstract: EN5034 IC marking jw marking S221 JB1 MARKING
Contextual Info: Ordering number:EN5034 N”5034 2SC5227 ¡I NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatures • Low noise : NF = 1.0dB typ f= 1GHz . - High gain: | S21e I 2= 12dB typ (f= 1GHz). • High cutoff frequency : fx=7GHztyp.