2 A DIODE Search Results

lc CONNECTOR DRAWING

Abstract: STM-16
Contextual Info: JOG-01146 Rev.2 OKI Electronics Components OL5450L-2,OL5451L-2, OL5453L-2 Series Rev. 2 [6. 2004] Preliminary 2mWCoaxial DFB Laser Diode Modules 1.DESCRIPTION The OL5450L-2, OL5451L-2, OL5453L-2 series consist of an MQW-DFB laser diode, a monitor PD, a single-stage optical isolator, a single-mode fiber and a coaxial package.

OL2415L-2-W127

Abstract: OL2415L-2-W129 OL4415L-2-W141
Contextual Info: JOG-01056 OKI Electronics Components OL2415L-2-Wnnn,OL3415L-2-Wnnn OL4415L-2-Wnnn Rev. 2 [6. 2003] Preliminary Transmitter optical sub-assembly for SFP/SFF 1.DESCRIPTION The OL2415L-2-Wnnn, OL3415L-2-Wnnn, OL4415L-2-Wnnn series consist of a MQW-DFB laser diode, a monitor PD, a single-stage optical isolator, a single-mode fiber-stub,

SC CONNECTOR DRAWING

Abstract: lc CONNECTOR DRAWING STM-16
Contextual Info: JOG-01146 Rev.5 Optical Components Rev. 5 [10. 2008] OL5450L-2,OL5451L-2, OL5453L-2 Series 2mWCoaxial DFB Laser Diode Modules 1. DESCRIPTION The OL5450L-2, OL5451L-2, OL5453L-2 series consist of an MQW-DFB laser diode, a monitor PD, a single-stage optical isolator, a single-mode fiber and a coaxial package.

IXYS DS 2-12a

Abstract: Avalanche diodes 64TI IXYS DSA 12
Contextual Info: Rectifier Diodes Avalanche Diodes DS 2 IFRMS = 7 A DSA 2 IFAVM = 3.6 A VRRM = 800 - 1800 V VRSM V 900 1300 1700 1900 VBRmin ① V VRRM V 1300 1750 1950 800 1200 1600 1800* Standard Avalanche Types Types DS 2-08A DS 2-12A A C C DSA 2-12A DSA 2-16A DSA 2-18A

Semikron SKR 21

Abstract: semikron skn 50/04 semikron skr 50/08 SKN 21 semikron skn 50/04 SKR 50 diode skn 21 diode skn 50/10 Semikron SKR 40 /12
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 °C) 50 A (95 °C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF

660 tg diode

Contextual Info: 2 /a v h + - K U 7 S W - I * y j y a Schottky Barrier Diode Twin Diode SF20SC9 Unit •mm P a c k a g e I FT O -2 2 0 1 0 ±0-2 </>3.2-cu 90V 20A 4.5 ±a 2 .7 ±a: Date code nafe_ @1 010N Type No. VF20!SC9 M _ •Tjl50°C Polarity • P rrsm T 2.7±0~

Contextual Info: DS 2 DSA 2 n ix Y S v RRM Rectifier Diodes Avalanche Diodes 800 -1800 V 7A 3.6 A F RMS F(AV)M V RSM V RRM ^ (B R )m in V V V 900 1300 1700 1900 1300 1750 1950 800 1200 1600 1800 Standard Avalanche Types Types DS2-08A DS2-12A DSA 2-12 A DSA 2-16 A DSA 2-18A

IN 508 DIODE

Abstract: SPDT1 SPST-1
Contextual Info: Wiring Diagrams Bottom Views DIP Version (Flat) SPST-1 Form A standard 1 2 6 SPST-1 Form A w/diode 1 2 7 SPDT-1 Form C standard 6 7 1 2 6 7 14 13 9 8 + – 14 13 9 8 14 13 SPST-1 Form A w/electrostatic Shield 1 2 9 8 SPST-1 Form A w/electrostatic shield and diode

Contextual Info: flflBSb'IS 00D3b0b 7bS • TLIT 4TE D TAIWAN LITON ELECTRONIC 3.0, 5.0 SQUARE TOP LED LAMPS LITEM 3 L T L -9 2 1 2 A /9 2 1 3 A B R IG H T R E D L T L -9 2 2 2 A /9 2 2 3 A H IG H E F F IC IE N C Y R E D L T L -9 2 3 2 A /9 2 3 3 A G R E E N L T L -9 2 5 2 A /9 2 5 3 A Y E L L O W

10SC4M

Abstract: f10sc4
Contextual Info: S /a v M * - K U 7 S W Schottky Barrier Diode - I * O U T LIN E D IM E N S IO N S DF10SC4M U nit • mm P a c k a g e I S T O -2 2 0 10 . 2 ± a : M 40 V 10 A 0 .5 ±a @ Date code ati^i_ 2 Type No. 05 Ö 10SC4M m a Polarity >SMD Il >Tjl50°C >Prrsm t j ^ y ' j I ffiti

Contextual Info: 2 /a vh + - KU7 S W - I* y j y a Schottky Barrier Diode Twin D iode O U T L IN E D IM E N S IO N S SF10SC4R Unit • mm P a ck a g e I F T O -2 2 0 10±0-2 <¿3.2-01 40 V 10 A 4.5±a 2.7±0- Date code nafe_ 0 18 1 Type No. M _ • T jl5 0 ° C

OL597N-2

Abstract: OL5492N-2 OL5497N-2 OL592N-2
Contextual Info: E2V0032-37-X1 ¡ electronic components OL592N-2, OL597N-2, OL5492N-2, OL5497N-2 LASER DIODES OL592N-2, OL597N-2, OL5492N-2, OL5497N-2 1.55 mm 2 mW Coaxial Module GENERAL DESCRIPTION The OL592N-2, OL597N-2, OL5492N-2, and OL5497N-2 are 1.55mm, MQW InGaAsP/InP laserdiode modules with a 2mW output, pigtailed with single mode fibers. These modules are

Contextual Info: • Appiication Examples Schottky barrier diodes (Power MOSï-ETs'} ‘ i ' f ; i-'-4 f ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta s 25 C) Package Type No. SB007W03C CP V RRM ■o !fsm lF (V) (A) (A) (A) 0.07 2 0.07 2 20 2

trr 30-06xx2

Abstract: 30-06xx2 TRR25-10XX2 II10-04L5
Contextual Info: S E A BROüJ N/ ABB □ □40300 S. EMI C0h □□□□SOS 3 ' o I 1 J V - 5 is s a Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren m it 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes Transistor Type/Type Vcex

5253-1N

Abstract: 5252-1N
Contextual Info: ZENER DIODES Zener Type No. Zener Vollast at lit @m A Volts Max. Zener Impedance @ In Ohms Zener Voltage Tolerance I 1N 5221 1 N 5222 1N 5223 2 .4 2 .5 2 .7 2 0 .0 " " 3 0 .0 " 1N 5224 1N 5 2 2 5 1N 5 2 2 6 2 .8 3 .0 3 .3 " " 2 9 .0 2 8 .0 " * ' IN 5 2 2 7

Contextual Info: TOSHIBA TLP227G,TLP227G-2 T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP227G, TLP227G-2 CORDLESS TELEPHONE PBX MODEM The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic DIP package.

diode RA 225 R

Contextual Info: D A 1 0 S H T 1 2 -2 2 0 Silicon C a rb id e S ch o ttk y Rectifier V rrm =1200V Ip = 10 A Qc = 19 nC 225 °C Max Tj S ilicon C arbide Pow er Schottky Diode Featu res TO-220 Pa ck a ge • 1200 V Schottky Rectifier • 225 °C Maximum Operating Temperature

diode OA-79

Abstract: germanium diode OA79 OA79 OA79 diode reverse circuit 0A79 oa79 diode 0A79 diode Diode germanium oa 2-OA79 DIODE OA79
Contextual Info: 0A79 2-O A79 G E R M A N IU M DIODE Germanium diode in all g la ss construction for use in a .m . detector circu its. Type 2-OA79 consist* of 2 diodes OA79 selected lo r operation in a ratio detector circuit. MECHANICAL DATA Dimensions in mm not tlnntd The white band indicates

dg1u

Abstract: TLP624
Contextual Info: TLP624,-2,-4 GaAs IRED a PHOTO-TRANSISTOR TLP6 24 PRO G RAM M ABLE CONTROLLERS AC /DC-INPUT M ODULE TELECOM M UNICATIO N The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic

Contextual Info: PRELIMINARY COM’L: -7/10/12/15 IND: -10/12/15/20 The MACH5-512/MACH5LV-512 AMD£I M A C H 5 -5 1 2 /1 2 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 6 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 8 4 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 9 2 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /

ic 4PC

Abstract: 115b1
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP320,-2,-4 TENTATIVE DATA T L P 3 2 0 U nit in mm T E L E C O M M U N IC A T IO N TLP320 OFFICE M A C H IN E ~ A T ELEP H O N E USE E Q U IP M E N T 3 The TOSHIBA TLP320, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown

m MA643

Abstract: MA689 ir d10 ir d10-D10 ma752 MA7D50 MA7D61 MA555 MA649 MA652
Contextual Info: Diodes, Triggers • Schottky Barrier Diodes SBD (For Power) Main Characteristics (Ta = 2 5 "C) Type No. Category A A A Vr I f(AV) (V) (A) Main Characteristics (Ta =2 5 °C) Package Category Ir ter * Vf max.(V) typ.(ns) ■ Fast Recovery Diodes (FRD) No.

TLP620

Abstract: TLP620-2 TLP620-4
Contextual Info: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode