2 A DIODE Search Results

lc CONNECTOR DRAWING

Abstract: STM-16
Contextual Info: JOG-01146 Rev.2 OKI Electronics Components OL5450L-2,OL5451L-2, OL5453L-2 Series Rev. 2 [6. 2004] Preliminary 2mWCoaxial DFB Laser Diode Modules 1.DESCRIPTION The OL5450L-2, OL5451L-2, OL5453L-2 series consist of an MQW-DFB laser diode, a monitor PD, a single-stage optical isolator, a single-mode fiber and a coaxial package.

OL2415L-2-W127

Abstract: OL2415L-2-W129 OL4415L-2-W141
Contextual Info: JOG-01056 OKI Electronics Components OL2415L-2-Wnnn,OL3415L-2-Wnnn OL4415L-2-Wnnn Rev. 2 [6. 2003] Preliminary Transmitter optical sub-assembly for SFP/SFF 1.DESCRIPTION The OL2415L-2-Wnnn, OL3415L-2-Wnnn, OL4415L-2-Wnnn series consist of a MQW-DFB laser diode, a monitor PD, a single-stage optical isolator, a single-mode fiber-stub,

SC CONNECTOR DRAWING

Abstract: lc CONNECTOR DRAWING STM-16
Contextual Info: JOG-01146 Rev.5 Optical Components Rev. 5 [10. 2008] OL5450L-2,OL5451L-2, OL5453L-2 Series 2mWCoaxial DFB Laser Diode Modules 1. DESCRIPTION The OL5450L-2, OL5451L-2, OL5453L-2 series consist of an MQW-DFB laser diode, a monitor PD, a single-stage optical isolator, a single-mode fiber and a coaxial package.

IXYS DS 2-12a

Abstract: Avalanche diodes 64TI IXYS DSA 12
Contextual Info: Rectifier Diodes Avalanche Diodes DS 2 IFRMS = 7 A DSA 2 IFAVM = 3.6 A VRRM = 800 - 1800 V VRSM V 900 1300 1700 1900 VBRmin ① V VRRM V 1300 1750 1950 800 1200 1600 1800* Standard Avalanche Types Types DS 2-08A DS 2-12A A C C DSA 2-12A DSA 2-16A DSA 2-18A

Semikron SKR 21

Abstract: semikron skn 50/04 semikron skr 50/08 SKN 21 semikron skn 50/04 SKR 50 diode skn 21 diode skn 50/10 Semikron SKR 40 /12
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 °C) 50 A (95 °C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF

660 tg diode

Contextual Info: 2 /a v h + - K U 7 S W - I * y j y a Schottky Barrier Diode Twin Diode SF20SC9 Unit •mm P a c k a g e I FT O -2 2 0 1 0 ±0-2 </>3.2-cu 90V 20A 4.5 ±a 2 .7 ±a: Date code nafe_ @1 010N Type No. VF20!SC9 M _ •Tjl50°C Polarity • P rrsm T 2.7±0~

Contextual Info: s e MIKROn V hsm Ifrm s maximum values for continuous operation V rrm 100 A Fast Recovery Rectifier Diodes ÌFAV (sin. 180; Tease = • •• ) 50 A (105 °C) | SKN 2 F 50 SKR 2 F 50 50 A (95 °C) tri = 200 ns $ V $ 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04

Contextual Info: DS 2 DSA 2 n ix Y S v RRM Rectifier Diodes Avalanche Diodes 800 -1800 V 7A 3.6 A F RMS F(AV)M V RSM V RRM ^ (B R )m in V V V 900 1300 1700 1900 1300 1750 1950 800 1200 1600 1800 Standard Avalanche Types Types DS2-08A DS2-12A DSA 2-12 A DSA 2-16 A DSA 2-18A

SMS201

Abstract: AEROFLEX SMS-201 A 0503 METELICS DETECTOR DIODE
Contextual Info: SMS201 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS201 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It has a high cutoff frequency and

IN 508 DIODE

Abstract: SPDT1 SPST-1
Contextual Info: Wiring Diagrams Bottom Views DIP Version (Flat) SPST-1 Form A standard 1 2 6 SPST-1 Form A w/diode 1 2 7 SPDT-1 Form C standard 6 7 1 2 6 7 14 13 9 8 + – 14 13 9 8 14 13 SPST-1 Form A w/electrostatic Shield 1 2 9 8 SPST-1 Form A w/electrostatic shield and diode

1307H

Contextual Info: :i5fE ORIGIN ELECTRIC CO SILICON F A S T R E C O V E R Y RECTIFYING DIODES • 200V ~ 800V SM- • 2 . 5 A 7>f LTD 1. SÔE D I . x -f - j.f 2. > m m tt z o n r n jF R LÖ1307H *•' (2 .5 A . 2 . ' / 7 1 - i J A a ' I J - H -f x - ; -i • Æ fê . r 422

Contextual Info: flflBSb'IS 00D3b0b 7bS • TLIT 4TE D TAIWAN LITON ELECTRONIC 3.0, 5.0 SQUARE TOP LED LAMPS LITEM 3 L T L -9 2 1 2 A /9 2 1 3 A B R IG H T R E D L T L -9 2 2 2 A /9 2 2 3 A H IG H E F F IC IE N C Y R E D L T L -9 2 3 2 A /9 2 3 3 A G R E E N L T L -9 2 5 2 A /9 2 5 3 A Y E L L O W

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP629,-2,-4 TENTATIVE DATA Unit TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP629, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP629-2 offers two isolated channels in an

10SC4M

Abstract: f10sc4
Contextual Info: S /a v M * - K U 7 S W Schottky Barrier Diode - I * O U T LIN E D IM E N S IO N S DF10SC4M U nit • mm P a c k a g e I S T O -2 2 0 10 . 2 ± a : M 40 V 10 A 0 .5 ±a @ Date code ati^i_ 2 Type No. 05 Ö 10SC4M m a Polarity >SMD Il >Tjl50°C >Prrsm t j ^ y ' j I ffiti

MA49156

Abstract: MA49508 MA49152 MA49104 MA491 gunn diodes MA49618 MA49107 MA49178 Gunn Diode
Contextual Info: M a n A M P icompany Gunn Diodes V 2.00 Part Number Suggested Frequency Range GHz C a se Style Pour 5 mW ^OUT 10 mW Page No. MA49508 - 7 -4 Anode Heat Sink Diodes 8 -1 2 1 2 -1 8 1 8 -2 6 2 6 -4 0 Suggested Frequency Range (GHz) MA49618 30 30 30 138 - MA49628

FMU12S

Abstract: FMU-12S
Contextual Info: 4-2 Fast Recovery Rectifier Diodes 4-2-2 2 Chip trrq : IR=IF 90% Recovery Point trrw : IR=2xIF Part No. FMU-21S, R IF IFSM trrq trrw V (A) (A) (µS) (µS) 100 10.0 40 0.4 0.18 5.0 30 0.4 0.18 10.0 40 0.4 0.18 FMU-12S, R FMU-22S, R 75% Recovery Point VRM

11-5B2

Abstract: TLP227GA TLP227GA-2
Contextual Info: TO SH IBA TLP227GA,TLP227GA-2 TENTATIVE TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP227GA, TLP227GA-2 M O D EM Unit in mm TELECOMMUNICATIONS 4 3 1 2 TLP227GA PBXs The Toshiba TLP227GA Series consist of a gallium arsenide infrared-emitting diode optically coupled to a photo- MOSFET in a

Contextual Info: T O SH IB A TLP628,TLP628-2,TLP628-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP628, TLP628-2, TLP628-4 PRO GRAM M ABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The T O S H IB A TLP628, -2, and -4 consists of a gallium arsenide infreared em itting diode op tically coupled to a phototransistor which

OL597N-2

Abstract: OL5492N-2 OL5497N-2 OL592N-2
Contextual Info: E2V0032-37-X1 ¡ electronic components OL592N-2, OL597N-2, OL5492N-2, OL5497N-2 LASER DIODES OL592N-2, OL597N-2, OL5492N-2, OL5497N-2 1.55 mm 2 mW Coaxial Module GENERAL DESCRIPTION The OL592N-2, OL597N-2, OL5492N-2, and OL5497N-2 are 1.55mm, MQW InGaAsP/InP laserdiode modules with a 2mW output, pigtailed with single mode fibers. These modules are

P321T

Abstract: L 321 t
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR T L P 3 2 1 . - 2 , - 4 T LP Ï2 1 PROGRAM MABLE CONTROLLERS U n it in m m DC-OUTPUT MODULE TELECOM M UNICATION T h e T O S H IB A T L P 3 2 1 , -2 a n d -4 c o n s ist o f a p h o to -tra n s is to r o p tic a lly co upled to a g a lliu m a rs e n id e in f ra r e d e m ittin g diode.

Contextual Info: • Appiication Examples Schottky barrier diodes (Power MOSï-ETs'} ‘ i ' f ; i-'-4 f ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta s 25 C) Package Type No. SB007W03C CP V RRM ■o !fsm lF (V) (A) (A) (A) 0.07 2 0.07 2 20 2

Contextual Info: GaAs IRED S PHOTO-TRANSISTOR T L P 6 2 1 , - 2 , - 4 Unit in mm PROGRAMMABLE CONTROLLER AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621-2 offers two isolated channels in

TLP523

Contextual Info: TLP523.-2.-4 G aAs IRED S PH O TO -TRA N SISTO R T LPS 2 3 PR O G R A M M A B L E CONTROLLERS DC-OUTPUT M O D U LE SOLID STATE RELAY The TOSHIBA TLP523, -2 and -4 consists of a gallium arsenide infrared em itting diode coupled w ith a silicon, darlington connected,

trr 30-06xx2

Abstract: 30-06xx2 TRR25-10XX2 II10-04L5
Contextual Info: S E A BROüJ N/ ABB □ □40300 S. EMI C0h □□□□SOS 3 ' o I 1 J V - 5 is s a Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren m it 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes Transistor Type/Type Vcex