1YCC Search Results

2yl1

Abstract: GNS 3011 2SC3003 13007 h3 324C 3014-100 54ls541 die itt diodes lz 1a1 hi1a2 E 13007
Contextual Info: MIL-M-38510/324C 15 OCTOBER 1987 SUPERSEDING-MIL-M-38510/324B 16 February 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL OCTAL BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON This specification Is approved for use by all Depart­

h1lk

Abstract: cept lpd d 3Z89 MIL-H-38510 5252 F 1005 skai 2 TT B6 C 110N ATID cp 68a diode ltpz
Contextual Info: MIL-H-38510/328B jWBliM"- H Il- H - M S lO / M M 23 Septem ber IM O M ILITA R Y SPEC IFIC A TIO N M irD n riR C lllT S D IG IT A L , LOW POKER SCHOTTKY T T L , " i f f m l S t t ' i w S i n * T K K E t- sx .T E < m m s . m o n o l it h ic s il ic o n T h U s p e c i f i c a t i o n I t approved f o r use

Contextual Info: S G S -T H O M S O N S D 1 5 2 8 -0 8 m RF & MICROWAVE TRANSISTO RS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 20 WATTS typ. IFF 1030 - 1090 MHz 15 WATTS (min.) DME 1025 - 1150 MHz 15 WATTS (typ.) TACAN 960 - 1215 MHz